Silicon-integrated nonlinear Ⅲ-Ⅴ photonics

作     者：Weiqiang Xie Chao Xiang Lin Chang Warren Jin Jonathan Peters John E.Bowers WEIQIANG XIE;CHAO XIANG;LIN CHANG;WARREN JIN;JONATHAN PETERS;JOHN E.BOWERS

作者机构：Department of Electrical and Computer EngineeringUniversity of CaliforniaSanta BarbaraSanta BarbaraCalifornia 93106USA Current address:Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2022年第10卷第2期

页      面：535-541页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0702[理学-物理学] 

基　　金：Defense Advanced Research Projects Agency(HR0011-15-C-055) 

主　　题：SOI AlGaAs waveguide 

摘      要：Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator(SOI)waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear Ⅲ-Ⅴ(Al Ga As) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold(-25 mW) Kerr frequency comb generation in ultrahigh-QAlGaAs microrings(Q over 10^(6)) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by Ⅲ-Ⅴ and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines.