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Progress in light-to-frequency conversion circuits based on low dimensional semiconductors

Nano Research 2021年第9期14卷 2938-2964页

作者： Seung Gi Seo Seung Yeob Kim jinheon jeong Sung Hun Jin Department of Electronic Engineering Incheon National UniversityAcademy-ro 119Yeongsu-guIncheon 22012Republic of Korea

As the scaling down of Si devices in the range less than few nm has been expedited up to a physical limit of Si,low dimensional materials have been regarded as one of next generation *** a variety of applications,studies on photodetectors have been actively investigated with their novel optical properties as well as astonishing electrical ***,most of research has focused on single device-type photodetector(i.e.,photo-diode or photo-transistor).Contrary to common photodetector,light-to-frequency circuits(LFCs)are based on frequency reading with photosensitive ring oscillators,which has better noise immunity and reduced system complexity,thus,can be utilized to novel application even in internet of things(loT)and bio&medical *** this review,low dimensional materials based circuit level photodetectors,which are core elements as the form of either inverters or ring oscillators for demonstration of LFCs,are *** with the introduction of low dimensional materials and their optical properties for optoelectronics,a fundamental concept for LFCs is specifically ***,research progress on low dimensional material based photosensitive inverters is addressed according to the types of ***,as one of practical method for the improvement of photodetector performance,molecular doping technology is ***,complete system of LFCs and its digitization for demonstration of production level,and potential application in the respective four aspects,(i)medical SpO_(2) detection,(ii)biological fluidic system,(iii)auto-lighting in agriculture,and(iv)optical feedback and sensing systems,are presented as systematic way to address the envisioned practical applications for the future displays including virtual reality and augmented reality,and *** a remark,LFCs based on low dimensional semiconductors are expected to be one of core components in trillion’s sensor area.

关键词： photodetector light-to-frequency conversion circuit transition metal dichalcogenide carbon nanotube

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Reversible and controllable threshold voltage modulation for n-channel MoS2 and p-channel MoTe_(2 )field-effect transistors via multiple counter doping with ODTS/poly-L-lysine charge enhancers

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Nano Research 2021年第9期14卷 3214-3227页

作者： Seung Gi Seo jinheon jeong Seung Yeob Kim Ajit Kumar Sung Hun Jin Department of Electronic Engineering Incheon National UniversityAcademy-ro 119Yeongsu-guIncheon 22012Republic of Korea

Confronted by the inherent physical limitations in scaling down Si technology,transition metal dichalcogenides(TMDCs)as alternatives are being tremendously researched and paid attention ***,mature counter doping technology for TMDCs is still elusive,and thus,a controllable and reversible charge enhancer is adopted for acceptor(or donor)-like doping via octadecyltrichlorosilane(ODTS)(or poly-L-lysine(PLL))***,multiple counter doping for TMDC field-effect transistors(FETs),combined with a threshold voltage(V;h)freezing scheme,renders the V_(th) modulation controllable,with negligible degradation and decent sustainability of FETs even after each treatment of a representative charge *** parallel,the counter doping mechanism is systematically investigated via photoluminescence spectroscopy,X-ray photoelectron spectroscopy,atomic force microscopy(AFM),surface energy characterization,and measurement of optoelectronic properties under illumination with light of various *** impressively,complementary inverters,composed of type-converted molybdenum ditelluride(MoTe_(2)>FETs and hetero-TMDC FETs in enhancement mode,are demonstrated via respective ODTS/PLL ***,driving backplane application for micro-light-emitting diode(p-LED)displays and physical validation of a corresponding counter doping scheme even for flexible polyethylene terephthalate(PET)substrates could be leveraged to relieve daunting challenges in the application of nanoscale Si-based three-dimensional(3D)stacked systems,with potential adoption of ultralow power and monolithic optical interconnection technology.

关键词： transition metal dichalcogenides(TMDCs) counter doping charge enhancer field-effect transistors micro-light-emitting diode(m-LED)

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