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Optimization of electrical performance and stability of fully solution-driven α-InGaZnO thin-film transistors by graphene quantum dots

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Journal of Materials Science & Technology 2023年第10期141卷 100-109页

作者： Xiaofen Xu Gang He Leini Wang Wenhao Wang shanshan jiang Zebo Fang School of Materials Science and Engineering Anhui UniversityHefei 230601China School of Integration Circuits Anhui UniversityHefei 230601China School of Mathematical Information Shaoxing UniversityShaoxing 312000China

This work presents solution-processed high-performance graphene quantum dots(GQDs)decorated amor-phous InGaZnO(α-IGZO)thin-film transistors(TFTs)based on ZrO x as gate *** with pure IGZO TFTs,GQDs-modifiedα-IGZO TFTs devices with optimized doping content have demonstrated better performances,including a larger field-effect mobility(μFE)of 35.91 cm 2 V^(-1)s^(-1),a higher on/offcurrent ratio(I ON/I OFF)of 5.04×10^(8),a smaller subthreshold swing(SS)of 0.11 V dec^(-1)and a smaller interfacial trap states(D it,1.57×10^(12)cm^(−2)).Moreover,the GQDs-doped IGZO TFTs with a doping concentration of 0.5 mg ml^(-1)have shown excellent stability under bias stress and illumination stress *** demonstrate the potential applications ofα-IGZO TFTs in logic circuits,a resistor-loaded unipolar inverter based on GQDs-IGZO/ZrO x has been integrated,demonstrating good dynamic behavior and a high gain of ***-frequency noise(LFN)characteristics of GQDs-IGZO/ZrO x TFTs have suggested that the fluctua-tions in mobility are the noise *** on all the experimental findings,it can be concluded that solution-processed GQDs-IGZO/ZrO x TFT may envision promising applications in optoelectronics.

关键词： Thin-film transistor α-InGaZnO Graphene quantum dots Stability

Multisymplectic Fourier pseudo-spectral integrators for Klein-Gordon-Schrdinger equations

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Science China Mathematics 2013年第5期56卷 915-932页

作者： KONG LingHua WANG Lan jiang shanshan DUAN YaLi School of Mathematics and Information Science Jiangxi Normal University School of Science Beijing University of Chemical Technology School of Mathematics University of Science and Technology of China

A multisymplectic Fourier pseudo-spectral scheme, which exactly preserves the discrete multisym- plectic conservation law, is presented to solve the Klein-Gordon-SchrSdinger equations. The scheme is of spectral accuracy in space and of second order in time. The scheme preserves the discrete multisymplectic conservation law and the charge conservation law. Moreover, the residuals of some other conservation laws are derived for the geometric numerical integrator. Extensive numerical simulations illustrate the numerical behavior of the multisymplectic scheme, and demonstrate the correctness of the theoretical analysis.

关键词： Klein-Gordon-SchrSdinger equations multisymplectic integrator Fourier pseudo-spectral meth- od. conservation law. soliton

Explicit Multi-Symplectic Methods for Hamiltonian Wave Equations

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Communications in Computational Physics 2007年第4期2卷 662-683页

作者： Jialin Hong shanshan jiang Chun Li Hongyu Liu State Key Laboratory of Scientific and Engineering Computing Institute of Computational MathematicsAcademy of Mathematics and Systems ScienceChinese Academy of SciencesBeijing 100080P.R.China Graduate School Chinese Academy of SciencesBeijing 100080P.R.China Department of Mathematics The Chinese University of Hong KongShatinN.T.Hong Kong.

In this paper,based on the multi-symplecticity of concatenating symplectic Runge-Kutta-Nystrom(SRKN)methods and symplectic Runge-Kutta-type methods for numerically solving Hamiltonian PDEs,explicit multi-symplectic schemes are constructed and investigated,where the nonlinear wave equation is taken as a model *** comparisons are made to illustrate the effectiveness of our newly derived explicit multi-symplectic integrators.

关键词： Hamiltonian wave equations multi-symplectic integration symplectic Runge-Kutta methods symplectic Runge-Kutta-Nystrom methods.

Highly active and durable triple conducting composite air electrode for low-temperature protonic ceramic fuel cells

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Nano Research 2023年第7期16卷 9280-9288页

作者： Qi Huang shanshan jiang Yujia Wang Jingjing jiang Yubo Chen Jiahuan Xu Hao Qiu Chao Su Daifen Chen School of Energy and Power Jiangsu University of Science and TechnologyZhenjiang 212100China Institute of Analysis and Testing Beijing Academy of Science and Technology(Beijing Center for Physical and Chemical Analysis)Beijing 100089China School of Material Science and Engineering Nanyang Technological University50 Nanyang AvenueSingapore 639798Singapore School of Science Jiangsu University of Science and TechnologyZhenjiang 212100China

Protonic ceramic fuel cells(PCFCs)are more suitable for operation at low temperatures due to their smaller activation energy(Ea).Unfortunately,the utilization of PCFC technology at reduced temperatures is limited by the lack of durable and high-activity air electrodes.A lot number of cobalt-based oxides have been developed as air electrodes for PCFCs,due to their high oxygen reduction reaction(ORR)***,cobalt-based oxides usually have more significant thermal expansion coefficients(TECs)and poor thermomechanical compatibility with *** characteristics can lead to cell delamination and ***,we rationally design a novel cobalt-containing composite cathode material with the nominal composition of Sr_(4)Fe_(4)Co_(2)O_(13)+δ(SFC).SFC is composed of tetragonal perovskite phase(Sr_(8)Fe_(8)O_(23)+δ,I4/mmm,81 wt.%)and spinel phase(Co_(3)O_(4),Fd3m,19 wt.%).The SFC composite cathode displays an ultra-high oxygen ionic conductivity(0.053 S·cm^(-1)at 550℃),superior CO_(2)tolerance,and suitable TEC value(17.01×10^(-6)K^(-1)).SFC has both the O_(2)^(-)/e^(-)conduction function,and the triple conducting(H^(+)/O_(2)^(-)/e^(-))capability was achieved by introducing the protonic conduction phase(BaZr_(0.2)Ce_(0.7)Y_(0.1)O_(3-δ),BZCY)to form SFC+BZCY(70 wt.%:30 wt.%).The SFC+BZCY composite electrode exhibits superior ORR activity at a reduced temperature with extremely low area-specific resistance(ASR,0.677Ω·cm^(2)at 550℃),profound peak power density(PPD,535 mW·cm^(-2)and 1.065 V at 550℃),extraordinarily long-term durability(>500 h for symmetrical cell and 350 h for single cell).Moreover,the composite has an ultra-low TEC value(15.96×10^(-6)K^(-1)).This study proves that SFC+BZCY with triple conducting capacity is an excellent cathode for low-temperature PCFCs.

关键词： protonic ceramic fuel cells spinel oxide composition tuning triple-conducting

Fc-PIP Catalyzed Asymmetric Synthesis of cis-2,3-Dihydrobenzofurans

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Chinese Journal of Chemistry 2014年第8期32卷 694-698页

作者： shanshan jiang Bin Hu Xingxin Yu Weiping Deng Shanghai Key Laboratory of New Drug Design School of PharmacyEast China University of Science and TechnologyShanghai 200237China

A highly enantioselective intramolecular Michael addition-Lactonization domino reaction of a range of enon acids catalyzed by nuleophilic organocatalyst(Fc-PIP)was developed,furnishing cis-2,3-dihydrobenzofuran deriva... 详细信息

关键词： Michael addition-Lactonization dihydrobenzofuran Fc-PIP

Energy-band engineering by 2D MXene doping for high-performance homojunction transistors and logic circuits

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Journal of Materials Science & Technology 2023年第28期159卷 41-51页

作者： Leini Wang Gang He Wenhao Wang Xiaofen Xu shanshan jiang Elvira Fortunato Rodrigo Martins School of Materials Science and Engineering Anhui UniversityHefei 230601China School of Integration Circuits Anhui UniversityHefei 230601China Department of Materials Science/CENIMAT-I3N Faculty of Sciences and TechnologyNew University of Lisbon and CEMOP-UNINOVA Campus de Caparica 2829-516 Caparic1Portugal

The homojunction based on Ti_(3)C_(2)T_(x) MXene-doped In_(2)O_(3) and indium oxide as the channel layer is real-ized in high-performance metal oxide thin film transistors(TFTs).Doping of MXene into In_(2)O_(3) results in n-type semiconductor behavior,realizing tunable work function of In_(2)O_(3) from 5.11 to 4.79 eV as MXene content increases from 0 to 2 wt.%.MXene-doped In_(2)O_(3)-based homojunction TFT presents optimal per-formance with electron mobilities of greater than 27.10 cm^(2)/(V s)at 240°C,far exceeding the maximum mobility of 3.91 cm^(2)/(V s)for single-layer In_(2)O_(3)*** improved performance originates from boosting of a two-dimensional electron gas(2DEG)formed at carefully engineered In_(2)O_(3)/MXene-doped In_(2)O_(3)ox-ide homojunction ***,the transformation in conduction mechanism leads to better stability of MXene-doped In_(2)O_(3) homojunction devices compared to undoped bilayer In_(2)O_(3).Low-frequency noise further illustrates that doping MXene into In_(2)O_(3) helps to reduce the device trap density,demonstrating excellent electrical performance.A resistor-loaded unipolar inverter based on In_(2)O_(3)/0.5%MXene-In_(2)O_(3)TFT has demonstrated full swing characteristics and a high gain of *** effective doping of MXene into constructed homojunction TFTs not only contributes to improved stability,but also provides an ef-fective strategy for designing novel homojunction TFTs for low-cost oxide-based electronics.

关键词： MXene-doped In_(2)O_(3) Homojunction 2D electron gases Thin film transistor Low frequency noise

Fermi level unpinning achievement and transport modification in Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb laminated stacks by doping engineering

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Journal of Materials Science & Technology 2022年第26期121卷 130-139页

作者： Lin Hao Gang He shanshan jiang Zhenxiang Dai Ganhong Zheng Jinyu Lu Lesheng Qiao Jingbiao Cui School of Materials Science and Engineering Anhui UniversityHefei230601China School of Integration Circuits Anhui UniversityHefei230601China School of Physics and Optoelectronics Engineering Anhui UniversityHefei230601China Department of Physics University of North TexasDentonTX76203USA

Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high *** passivation and doping engineering technology have become the main driving force to solve the ***,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A *** energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level *** transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been *** analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.

关键词： Fermi level pinning High-k gate dielectrics Field effect transistor Electrical transport mechanism Doping

Efficient Spin-Flip between Charge-Transfer States for High-Performance Electroluminescence, without an Intermediate Locally Excited State

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Research 2024年第1期2023卷 339-349页

作者： Donghai Zhang shanshan jiang Xiaodong Tao Fulin Lin Lingyi Meng Xu-Lin Chen Can-Zhong Lu State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian 350002China Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China FuzhouFujian 350108China Xiamen Key Laboratory of Rare Earth Photoelectric Functional Materials Xiamen Institute of Rare Earth MaterialsHaixi InstitutesChinese Academy of SciencesXiamenFujian 361021China University of Chinese Academy of Sciences Beijing 100049China

Thermally activated delayed fluorescence(TADF)materials with both high photoluminescence quantum yield(PLQY)and fast reverse intersystem crossing(RISC)are strongly desired to realize efficient and stable organic light-emitting diodes(OLEDs).Control of excited-state dynamics via molecular design plays a central role in optimizing the PLQY and RISC rate of TADF materials but remains ***,3 TADF emitters possessing similar molecular structures,similar high PLQYs(89.5%to 96.3%),and approximate energy levels of the lowest excited singlet states(S_(1)),but significantly different spin-flipping RISC rates(0.03×10^(6) s^(−1) vs.2.26×10^(6) s^(−1))and exciton lifetime(297.1 to 332.8μs vs.6.0μs)were systematically synthesized to deeply investigate the feasibility of spin-flip between charge-transfer excited states(^(3)CT–^(1)CT)transition.

关键词： transition lifetime desired

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

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Journal of Materials Science & Technology 2017年第8期33卷 901-906页

作者： Juan Gao Gang He Dongqi Xiao Peng Jin shanshan jiang Wendong Li Shuang Liang Li Zhu School of Physics and Materials Science Radiation Detection Materials & Devices Lab Anhui University School of Mechanics and Optoelectric Physics Anhui University of Science and Technology

In the current work, in situ surface passivation Ge substrate by using trimethylaluminum（TMA） prior to HfTiO films deposition and electrical properties of HfTiO/Ge gate stacks have been investigated by X-ray photoelectron spectroscopy（XPS） and electrical measurements systematically. Based on analysis from XPS measurements, it has been confirmed that the interfacial layer of HfTiO/Ge gate stack has been suppressed effectively after 20 half-ALD cycles TMA pretreatment. Electrical properties of metal-oxidesemiconductor（MOS） capacitor based on HfTiO gate dielectrics have shown that the MOS capacitor with20 cycles TMA cleaning exhibits the lowest interface state density（~7.56 eV^（-1）cm^（-2）） and the smallest leakage current（~2.67 × 10^（-5）A/cm^2）. Correspondingly, the leakage current conduction mechanisms for MOS capacitor device with 20 cycles TMA cleaning also have been discussed in detail.

关键词： Germanium Trimethylaluminum Atomic layer deposition Electrical properties