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Efficient Spin-Flip between Charge-Transfer States for High-Performance Electroluminescence, without an Intermediate Locally Excited State

作     者:Donghai Zhang Shanshan Jiang Xiaodong Tao Fulin Lin Lingyi Meng Xu-Lin Chen Can-Zhong Lu Donghai Zhang;Shanshan Jiang;Xiaodong Tao;Fulin Lin;Lingyi Meng;Xu-Lin Chen;Can-Zhong Lu

作者机构:State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhouFujian 350002China Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian 350108China Xiamen Key Laboratory of Rare Earth Photoelectric Functional MaterialsXiamen Institute of Rare Earth MaterialsHaixi InstitutesChinese Academy of SciencesXiamenFujian 361021China University of Chinese Academy of SciencesBeijing 100049China 

出 版 物:《Research》 (研究(英文))

年 卷 期:2024年第2023卷第1期

页      面:339-349页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:the National Natural Science Foundation of China(Grant Nos.52073286 and 21805281) the Natural Science Foundation of Fujian Province(Grant No.2006L2005) the Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China(Grant Nos.2021ZR132 and 2021ZZ115) the Youth Innovation Foundation of Xiamen City(Grant Nos.3502Z20206082 and 3502Z20206083) 

主  题:transition lifetime desired 

摘      要:Thermally activated delayed fluorescence(TADF)materials with both high photoluminescence quantum yield(PLQY)and fast reverse intersystem crossing(RISC)are strongly desired to realize efficient and stable organic light-emitting diodes(OLEDs).Control of excited-state dynamics via molecular design plays a central role in optimizing the PLQY and RISC rate of TADF materials but remains ***,3 TADF emitters possessing similar molecular structures,similar high PLQYs(89.5%to 96.3%),and approximate energy levels of the lowest excited singlet states(S_(1)),but significantly different spin-flipping RISC rates(0.03×10^(6) s^(−1) vs.2.26×10^(6) s^(−1))and exciton lifetime(297.1 to 332.8μs vs.6.0μs)were systematically synthesized to deeply investigate the feasibility of spin-flip between charge-transfer excited states(^(3)CT–^(1)CT)transition.

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