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Optimizing the thickness of Ta_(2)O_(5) interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO_(2) switching layer for multilevel data storage

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Journal of Materials Science & Technology 2022年第11期106卷 98-107页

作者： Muhammad Ismail haider abbas Chandreswar Mahata Changhwan Choi Sungjun Kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory *** this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and *** show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive ***,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance *** I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky *** can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting *** is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive *** results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier

关键词： Resistive switching Ta_(2)O_(5)/ZrO_(2)bilayer film Barrier layer thickness Multilevel resistance states RESET-stop voltage

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Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

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Nano Research 2022年第3期15卷 2263-2277页

作者： Asif Ali haider abbas Muhammad Hussain Syed Hassan abbas Jaffery Sajjad Hussain Changhwan Choi Jongwan Jung HMC(Hybrid Materials Center)and Department of Nanotechnology and Advanced Materials Engineering Sejong UniversitySeoul 143–747Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

Investigating the promising chalcogenide materials for the development of memory and advanced neuromorphic computing applications is a critical step in realizing electronic memory and synaptic devices that can efficiently emulate biological synaptic ***,the assessment of monochalcogenide materials for the fabrication of highly scalable memory and electronic synaptic devices that can accurately mimic synaptic functions remain *** the present study,we investigated the thickness-dependent resistive switching(RS)behavior of conductive bridge random access memory(CBRAM)based on a monochalcogenide GeSe switching medium for its possible application in high-performance memory and electronic *** thin films of different thicknesses(6,13,24,35,47,and 56 nm)were deposited via sputtering to fabricate CBRAM devices with a stacking sequence of Ag/GeSe/Pt/Ti/SiO_(2).The devices exhibited compliance current(CC)-free and electroforming-free RS with highly stable endurance and retention characteristics with no major *** devices with a thickness of 6 nm had a low-resistance state(LRS),which required an initial reset to ensure reliable switching *** devices with a thickness of 47 nm and above exhibited the co-existence of unipolar resistive switching(U-RS)and bipolar resistive switching(B-RS)with the CC-controlled transition between the two switching *** resistance states in the 24-nm device between a high-resistance state(HRS)and an LRS were achieved by controlling the set-CC(from 5 mA to CC-free)and the reset stop voltage(from–0.5 to–1.0 V)during the set and reset processes,*** analog RS behavior of the device was further investigated with appropriate pulse measurements to emulate vital synaptic functions,including long-term potentiation(LTP),long-term depression(LTD),spike-rate-dependent plasticity(SRDP),spike-timing-dependent plasticity(STDP),paired-pulse facilitation(PPF),paired-pulse depression(PPD)and

关键词： conductive bridge random access memory(CBRAM) resistive memory switching monochalcogenide material bipolar and unipolar resistive switching multilevel resistive switching electronic synapses

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Towards engineering in memristors for emerging memory and neuromorphic computing: A review

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Journal of Semiconductors 2021年第1期42卷 33-61页

作者： Andrey S.Sokolov haider abbas Yawar abbas Changhwan Choi Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea Department of Physics Khalifa UniversityAbu Dhabi 127788United Arab Emirates

Resistive random-access memory(RRAM),also known as memristors,having a very simple device structure with two terminals,fulfill almost all of the fundamental requirements of volatile memory,nonvolatile memory,and neuromorphic *** memory and neuromorphic behaviors are currently being explored in relation to a range of materials,such as biological materials,perovskites,2D materials,and transition metal *** this review,we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching *** then discuss emergent memory technologies using memristors,together with its potential neuromorphic applications,by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices,in areas such as ION/IOFF ratio,endurance,spike time-dependent plasticity(STDP),and paired-pulse facilitation(PPF),among *** emulation of essential biological synaptic functions realized in various switching materials,including inorganic metal oxides and new organic materials,as well as diverse device structures such as single-layer and multilayer hetero-structured devices,and crossbar arrays,is analyzed in ***,we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.

关键词： RRAM memristor emerging memories neuromorphic computing electronic synapse resistive switching memristor engineering

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Memristive SRAM cell of seven transistors and one memristor

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Journal of Semiconductors 2016年第10期37卷 56-59页

作者： Patrick W.C.Ho haider abbas F.Almurib T.Nandha Kumar Department of Electrical & Electronic Engineering University of Nottingham Malaysia Campus

In this work, a novel memristive SRAM cell is designed using seven transistors and one memristor（7T1M）. In this 7T1 M SRAM cell, the non-volatile functionality is achieved by adding a single memristor and a transistor to the design of a volatile SRAM cell. The designing of the 7T1 M SRAM cell also introduces VCTRL which allows bidirectional current flowing through the memristor, instead of relying on complementary input sources which would require more design components. In this article, memristive SRAM cells available from the literature are simulated using the same simulation environment for a fair comparison. Simulations show that the7T1 M SRAM cell has the least power consumption against other memristive SRAM cells in the literature. The7T1 M SRAM cell operates with an average switching speed of 176.21 ns and an average power consumption of2.9665μW. The 7T1 M SRAM cell has an energy-delay-area product value of 1.61, which is the lowest among the memristive SRAM cells available in the literature.

关键词： memristor memristive SRAM cell EDAP non-volatile memory cell

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Comparison between Pt/TiO_2/Pt and Pt/TaO_X/TaO_Y/Pt based bipolar resistive switching devices

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Journal of Semiconductors 2016年第6期37卷 39-51页

作者： Patrick W.C.Ho Firas Odai Hatem haider abbas F.Almurib T.Nandha Kumar Department of Electrical and Electronic Engineering University of Nottingham Malaysia Campus

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory *** this article,the performances of T1O_2 and TaO_2nonvolatile memristive devices were compared and the factors that make TaO_2 memristive devices better than T1O_2 memristive devices were ***_2 memristive devices have shown better endurance performances（10~8times more switching cycles） and faster switching speed（5 times） than TiO_2 memristive *** of TaO_2 memristive devices requires ~ 4.5 times less energy than TiO_2 memristive devices of a similar *** retention period of TaO_2 memristive devices is expected to exceed 10 years with sufficient experimental *** addition to comparing device performances,this article also explains the differences in physical device structure,switching mechanism,and resistance switching performances of TiO_2 and TaO_2 memristive *** article summarizes the reasons that give TaO_2 memristive devices the advantage over TiO_2 memristive devices,in terms of electroformation,switching speed,and endurance.

关键词： resistive switching devices TiO2 devices TaO2 devices non-volatile memory devices

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Management of Airway in a Patient with Traumatic Sub-glottic Stenosis

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Open Journal of Anesthesiology 2013年第3期3卷 199-200页

作者： Zia Arshad haider abbas Sulekha Saxena Jaishri Bogra Department of Anaesthesia KG’s MU Lucknow India.

Tracheal stenosis or tracheal injury is a distressing condition. The silicone tracheal T-tube presents a substitute for stent of this complicated disease. We have come across a case of tracheal perforation in which tracheoplasty was planned. After traceoplasty silicone tracheal T-tube was placed as a stent. We were not able to connect silicone tracheal T-tube with Bain circuit with ET TUBE No. 8.5, 8, 7.5, 7 connector and it was difficult to ventilate the patient now. We have tried other ET TUBE connector and finally we succeeded to connect ET TUBE No. 5.5 connector with Bain circuit and we were able to ventilate the patient.

关键词： Traceoplasty Tracheal T-Tube Subglottic Stenosis

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Comparison of Laryngoscopic View and Hemodynamic Changes with Flexitip McCoy and Macintosh Laryngoscope Blade in Predicted Easy and Difficult Airway

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Open Journal of Anesthesiology 2013年第5期3卷 278-282页

作者： Zia Arshad haider abbas Jaishree Bogra Sulekha Saxena Department of Anesthesiology K G Medical University Lucknow India.

Objective: To compare the laryngoscopic view and the hemodynamic changes by using flexitip McCoy laryngoscope with Macintosh laryngoscope. Method: Study design-Prospective randomized controlled study. A total of 220 patients were included in the study. Patients were allocated on the basis of their airway anatomy in to two groups, one is predicted easy group and the other one was predicted difficult airway group. Among each group, half of the patient intubation was performed with Macintosh blade and the other half was intubated with the help of McCoy blade. The airway prediction was done on the basis of Mallampati grade, thyromental distance, inter incisor gap, jaw protrusion and weight of the patient. Larygoscopic view and hemodynamic changes were recorded. Results: The change in pulse rate was significantly (p = 0.01) higher among the patients of Group B (85.02 ± 10.13) as compared to Group A (79.20 ± 13.11) after induction in predicted easy patients. Similar observation was found for pulse rate after laryngoscopy among both predicted easy and difficult patients. The diastolic blood pressure was significantly (p = 0.0001) higher in Group B (86.34 ± 9.78) than Group A (77.12 ± 11.66) after induction among predicted easy patients. However, diastolic blood pressure was significantly (p = 0.0004) higher in Group A (82.00 ± 10.98) compared with Group B (75.00 ± 9.06) after induction among predicted difficult patients. The average time taken during laryngoscopy was in-significantly (p > 0.05) higher in Group B (13.90 ± 5.95) compared with Group A (12.42 ± 3.58) among predicted easy patients. However, the time taken was significantly (p = 0.0001) higher in Group A (20.83 ± 2.47) than Group B (12.66 ± 3.0) in predicted difficult patients. A majority of the patients of both the groups were in Grade I (Group A = 61.8%, Group B = 81.8%) followed by Grade II (Group A = 38.2%, Group B = 18.2%) among predicted easy patients. Conclusion: It was concluded that the McCoy blade may

关键词： Macintosh Blade McCoy Blade Laryngoscopy Airway

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An Insight into Different Strategies for Control and Prophylaxis of Fasciolosis:A Review

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Journal of Advances in International Veterinary Research 2022年第1期4卷 5-14页

作者： Hafiz Muhammad Rizwan Muhammad Sohail Sajid haider abbas Sadia Ghazanfer Mamoona Arshad Section of Parasitology Department of PathobiologyKBCMA College of Veterinary and Animal SciencesNarowalSub-campus UVASLahorePakistan Department of Parasitology University of Agriculture FaisalabadPakistan Department of Epidemiology and Public Health University of Veterinary and Animal SciencesLahorePakistan

Fasciolosis is one of the important diseases of livestock and has zoonotic *** can cause huge economic losses due to decrease in milk and meat production,decreased feed conversion ratio,and cost of *** and prophylaxis strategies for Fasciola infection are formed based on epidemiological *** control of Fasciola infection can be attained by treating the animals with active *** use of different combinations of anthelmintics with a possible rotation is more effective against immature as well as adult *** of the intermediate host(snail)is vital for the reduction of *** to the rapid growth of snails,the eradication is quite difficult in waterlogged and marshy *** use of different grazing methods and treatment of grazing areas can also help to control fasciolosis.A variety of antigens generated by Fasciola *** been shown to protect against liver fluke *** crude antigens,excretory/secretory,and refined antigens and their combination can be used as prophylactic treatment for the control of *** use of any of the single or combination of these methods can be very effective for the control of fasciolosis.

关键词： Fasciolosis Control Chemotherapy Grazing management Prophylactic treatment

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Epidemiology and Control of Congo Fever in Sacrificial Animals of Pakistan

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Veterinary Science Research 2019年第2期1卷 18-24页

作者： Hafiz Muhammad Rizwan Muhammad Sohail Sajid haider abbas Muhammad Fiaz Qamar Qaiser Akram Mahvish Maqbool Section of Parasitology Department of PathobiologyCollege of Veterinary and Animal SciencesNarowalSub campus UVASLahore Department of Parasitology University of AgricultureFaisalabadPakistan Department of Pathobiology College of Veterinary&Animal SciencesJhangSub campus UVASLahore Section of Microbiology Department of PathobiologyCollege of Veterinary and Animal SciencesNarowalSub campus UVASLahore

The cases and deaths due to Crimean-Congo haemorrhagic fever(CCHF)virus commonly known as Congo virus(fatality rate 15%)have been reported throughout Pakistan from the last few years especially during religious occasion,*** annual increase in death rates due to CCHF demonstrate the importance of awareness of Congo fever at academia as well as public *** symptoms of Congo fever which appear one to nine days after tick bite,include sudden high fever,muscle aches,abdominal pain,headache,dizziness,sore eyes,jaundice,mood swings,confusion,aggression,and sensitivity to *** other signs include sore throat,joint pain,vomiting,diarrhea,hemorrhages,and bleeding from skin and large *** Infection has been reported in many species of wild as well as domestic animals including hares,cattle,sheep,goats,dogs,mice and *** least 31 species of Hyalomma,Boophilus,Rhipicephalus,Dermacentor(Ixodidae:hard ticks)act as vector of CCHF in which transovarial,transstadial and venereal transmission *** virus attacks the immune system of the host and influences the immune *** Congo fever virus can be isolated from blood,plasma and many body tissues(kidneys,liver,spleen,lungs,brain and bone marrow).Mice inoculation,enzyme-linked immunosorbent assay(ELISA),reverse transcription polymerase chain reaction(RT-PCR)can be used for detection of the ***,IgM and IgG antibodies against CCHFV can also be detected and *** of general public,tick control with acaricides,use of anti-CCHFV immunoglobulin,usage of approved repellents to prevent tick bites,wearing neutral-coloured garments,application of a permethrin spray to the clothing,avoiding tall grasses and shrubs,applying sunscreen,avoiding direct contact with the blood or tissues of animals are the factors for successful prevention of the infection.

关键词： Congo fever Transmission Eid-ul-Azha Epidemiology Control

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中国荷斯坦牛CSN3基因多态性及其与泌乳性状的关联性

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西北农林科技大学学报（自然科学版） 2018年第3期46卷 8-15页

作者：胡言桂林生余横伟 haider abbas Raza 昝林森西北农林科技大学动物科技学院陕西杨凌712100 现代牛业生物技术与应用国家地方联合工程研究中心陕西杨凌712100

【目的】研究中国荷斯坦牛CSN3基因的多态性,并探索其与泌乳性状的关系。【方法】采用DNA测序方法,对565头中国荷斯坦牛CSN3基因进行群体变异分析,将检测到的单核苷酸多态性(SNP)位点与中国荷斯坦牛泌乳性状进行关联性分析,同时分析不... 详细信息

【目的】研究中国荷斯坦牛CSN3基因的多态性,并探索其与泌乳性状的关系。【方法】采用DNA测序方法,对565头中国荷斯坦牛CSN3基因进行群体变异分析,将检测到的单核苷酸多态性(SNP)位点与中国荷斯坦牛泌乳性状进行关联性分析,同时分析不同双倍型对中国荷斯坦牛泌乳性状的影响。【结果】从中国荷斯坦牛CSN3基因中共检测到4个SNP位点,分别为g.463A>G、g.1012A>C、g.2015T>A和g.2396A>T,除g.2396A>T外,其余3个SNPs位点与中国荷斯坦牛泌乳性状紧密关联,其中g.463A>G、g.2015T>A均可以显著影响乳脂率和乳蛋白率,g.1012A>C可以显著影响乳脂率。双倍型关联性分析发现,H14H14的乳脂率显著或极显著高于其他双倍型。【结论】CSN3基因可以作为中国荷斯坦牛泌乳性状的候选基因用于标记辅助选择。

关键词：中国荷斯坦牛 CSN3基因多态性泌乳性状关联性分析

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