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STCF conceptual design report (Volume 1): Physics & detector

Frontiers of physics 2024年第1期19卷 1-154页

作者： M.Achasov X.C.Ai L.P.An R.Aliberti q.An X.Z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko Z.H.Bu F.M.Cai H.Cai J.J.Cao q.H.Cao X.Cao Z.Cao q.Chang K.T.Chao D.Y.Chen H.Chen H.X.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen X.Chen X.F.Chen X.R.Chen Y.Chen Y.q.Chen H.Y.Cheng J.Cheng S.Cheng T.g.Cheng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong W.H.Dong V.Druzhinin D.S.Du Y.J.Du Z.g.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang g.Fedotovich C.q.Feng X.Feng Y.T.Feng J.L.Fu J.gao Y.N.gao P.S.ge C.q.geng L.S.geng A.gilman L.gong T.gong B.gou W.gradl J.L.gu A.guevara L.C.gui A.q.guo F.K.guo J.C.guo J.guo Y.P.guo Z.H.guo A.guskov K.L.Han L.Han M.Han X.q.Hao J.B.He S.q.He X.g.He Y.L.He Z.B.He Z.X.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu X.H.Hu Y.C.Hu J.Hua g.S.Huang J.S.Huang M.Huang q.Y.Huang W.q.Huang X.T.Huang X.J.Huang Y.B.Huang Y.S.Huang N.Hüsken V.Ivanov q.P.Ji J.J.Jia S.Jia Z.K.Jia H.B.Jiang J.Jiang S.Z.Jiang J.B.Jiao Z.Jiao H.J.Jing X.L.Kang X.S.Kang B.C.Ke M.Kenzie A.Khoukaz I.Koop E.Kravchenko A.Kuzmin Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li g.Li g.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li X.Li X.H.Li X.q.Li X.H.Li Y.Li Y.Y.Li Z.J.Li H.Liang J.H.Liang Y.T.Liang g.R.Liao L.Z.Liao Y.Liao C.X.Lin D.X.Lin X.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu g.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu q.Liu S.B.Liu T.Liu X.Liu Y.W.Liu Y.Liu Y.L.Liu Z.q.Liu Z.Y.Liu Z.W.Liu I.Logashenko Y.Long C.g.Lu J.X.Lu N.Lu q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.H.Luo H.J.Lyu X.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.X.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen q.Ouyang P.Pakhlov g.Pakhlova X.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata B.B.qi Y.q.qi W.B.qian Y.qian C.F.qiao J.J.qin J.J.qin L.q.qin X.S.qin T.L.qiu J.Rademacker C.F.Redmer H.Y.Sang Anhui University Hefei 230039China Beihang University Beijing 100191China Budker Institute of Nuclear Physics Novosibirsk 630090Russia CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Cavendish Laboratory University of CambridgeJJ Thomson AveCambridge CB30HEUnited Kingdom Central China Normal University Wuhan 430079China Central South University Changsha 410083China China University of geosciences Wuhan 430074China China University of Mining and Technology Xuzhou 221116China École Polytechnique Fédérale de Lausanne(EPFL) LausanneSwitzerland Fudan University Shanghai 200433China goethe University Frankfurt D-60325 Frankfurt am MainGermany guangxi Normal University Guilin 541004China guangxi Uninversity Nanning 530004China Hangzhou Institute for Advanced Study UCASHangzhou 310024China Hebei Normal University Shijiazhuang 050024China Hebei University Baoding 071002China Hefei University of Technology Hefei 230601China Helmholtz Institute Mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China High Energy Physics Center Chung-Ang UniversitySeoul 06974Korea Higher School of Economy 11 Pokrovsky Bulvar Moscow 109028Russia Huangshan University Huangshan 245000China Hubei University of Automotive Technology Shiyan 442002China Hunan Normal University Changsha 410081China Hunan University of Science and Technology Xiangtan 411201China Hunan University Changsha 410082China Indiana University BloomingtonIndiana 47405USA Inner Mongolia University Hohhot 010021China Institute of Advanced Science Facilities Shenzhen 518107China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Institute of Physics Academia SinicaTaipeiTaiwan 11529China Institute of Theoretical Physics Chinese Academy of SciencesBeijing 100190China Jilin University Changch

The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics *** is designed to operate in a center-of-mass energy range from 2 to 7 geV with a peak luminosity of 0.5×10^(35) cm^(–2)·s^(–1) or *** STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for exploring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for exotic hadrons and physics beyond the Standard *** STCF project in China is under development with an extensive R&D *** document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies.

关键词： electron–positron collider tau-charm region high luminosity STCF detector conceptual design

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Degradation of light emitting diodes:a proposed methodology

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Journal of Semiconductors 2011年第1期32卷 41-44页

作者： Sau Koh Willem Van Driel g.q.zhang Delft Institute of Microsystems and Nanoelectronics(Dimes) Delft University of Technology Materials Innovation Institute(M2i) Mekelweg 22628 CDDelftNetherlands philips Lighting LightLabsNL-5611BDEindhovenNetherlands

Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters.

关键词： LED light degradation lumen overstress current temperature

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Effects of Vapor Pressure and Super-Hydrophobic Nanocomposite Coating on Microelectronics Reliability

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Engineering 2015年第3期1卷 384-390页

作者： Xuejun Fan Liangbiao Chen C.P.Wong Hsing-Wei Chu g.q.zhang Department of Mechanical Engineering Lamar University State Key Laboratory of Solid State Lighting School of Materials Science and Engineering Georgia Tech Delft University of Technology Institute of Semiconductors Chinese Academy of Sciences

Modeling vapor pressure is crucial for studying the moisture reliability of microelectronics, as high vapor pressure can cause device failures in environments with high temperature and humidity. To minimize the impact of vapor pressure, a super-hydrophobic(SH) coating can be applied on the exterior surface of devices in order to prevent moisture penetration. The underlying mechanism of SH coating for enhancing device reliability, however, is still not fully understood. In this paper, we present several existing theories for predicting vapor pressure within microelectronic materials. In addition, we discuss the mechanism and effectiveness of SH coating in preventing water vapor from entering a device, based on experimental results. Two theoretical models, a micro-mechanics-based whole-field vapor pressure model and a convection-diffusion model, are described for predicting vapor pressure. Both methods have been successfully used to explain experimental results on uncoated samples. However, when a device was coated with an SH nanocomposite, weight gain was still observed, likely due to vapor penetration through the SH surface. This phenomenon may cast doubt on the effectiveness of SH coatings in microelectronic devices. Based on current theories and the available experimental results, we conclude that it is necessary to develop a new theory to understand how water vapor penetrates through SH coatings and impacts the materials underneath. Such a theory could greatly improve microelectronics reliability.

关键词：纳米复合涂层微电子技术蒸汽压力超疏水性可靠性对流扩散模型设备故障微电子材料

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Multi-LED package design,fabrication and thermal analysis

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Journal of Semiconductors 2013年第5期34卷 54-58页

作者： R.H.Poelma S.Tarashioon H.W.van Zeijl S.goldbach J.L.J.Zijl g.q.zhang Delft University of Technology DelftThe Netherlands Philips Lighting EindhovenThe Netherlands Fico/Besi DuivenThe Netherlands

An ultra-thin multi-LED package is designed, manufactured and its thermal performance is character- ized. The objective of this study is to develop an efficient thermal modelling approach for this system which can be used for optimization of the thermal-performance of future ultra-thin designs. A high-resolution thermal imaging camera and thermocouples were used to measure the temperature distribution of the multi-LED package and the LED-die temperature for different operating powers. Finally, we compare the thermal measurements with the finite element simulation results. It is concluded that the modelling approach can assist in the thermal optimization of future multi-LED package designs.

关键词： LED packaging optics molding high-resolution thermal imaging thermal modeling and measure-ments

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INVESTIgATION INTO HOT DEFORMATION BEHAVIOR OF SPRAY FORMED SUPERALLOY gH742

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Acta Metallurgica Sinica(English Letters) 2004年第2期17卷 205-209页

作者： Z.Li g.q.zhang Z.H.zhang S.F.Tian National Key Lab.of High Temperature Structural Materials,Beijing Institute of Aeronautical Materials,Beijing 100095,China Lab. of High Temp. Structural Mat. Beijing Inst. of Aero. Mat. Beijing 100095 China

In order to evaluate the deformation characteristics of spray formed superalloy gH742and determine the appropriate forging procedure of the alloy on this basis, the influenceof deformation temperature and strain rate on the ductility of spray formed gH742was investigated by using the gleeble-3500 thermal-mechanical testing machine. It isshown that the forgeability of spray formed gH742 is better than conventional gH742by ingot metallurgy because of refined grain structure and enhanced chemical homo-geneity of spray formed gH742. In the temperature range of 1020 to 1100℃, theductility of spray formed gH742 is dependent on the deformation temperature and isincreased linearly in proportion to the increment of deformation temperature, whichis more than 40% at 1020℃ and more than 60% at the temperature between 1100and 1140℃. Furthermore, the results indicate the flow stress is affected considerablyby the deformation temperature and strain rate. In the temperature range of 1020 to1140℃, the maximum flow stress of spray formed gH742 increases with the incrementof strain rate and decreases with the increment of the deformation temperature.

关键词： spray forming superalloy gH742 hot deformation physical simulation

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Location of Asymmetric ground Fault Using Virtual Injected Current Ratio and Two-stage Recovery Strategy in Distribution Networks

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CSEE Journal of Power and Energy Systems 2024年第1期10卷 151-161页

作者： Haiting Shan Luliang zhang q.H.Wu Mengshi Li School of Electric Power Engineering South China University of Technology(SCUT)Guangzhou 510641China

Sparse measurements challenge fault location in distribution *** paper proposes a method for asymmetric ground fault location in distribution networks with limited measurements.A virtual injected current vector is formulated to estimate the fault line,which can be reconstructed from voltage sags measured at a few buses using compressive sensing(CS).The relationship between the virtual injected current ratio(VICR)and fault position is deduced from circuit analysis to pinpoint the ***,a two-stage recovery strategy is proposed for improving reconstruction accuracy of the current vector,where two different sensing matrixes are utilized to improve the *** proposed method is validated in IEEE 34 node test *** results show asymmetric ground fault type,resistance,fault position and access of distributed generators(Dgs)do not significantly influence performance of our *** addition,it works effectively under various scenarios of noisy measurement and line parameter *** on 134 node test feeders prove the proposed method is also suitable for systems with more complex structure.

关键词： Distribution networks fault location reconstruction accuracy two-stage recovery virtual injected current ratio

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Seismic and geological evidence of hidden faults in the Yinpan Reservoir area based on a dense seismic array

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Science China Earth Sciences 2024年第7期67卷 2401-2407页

作者： guangyao YIN Huai zhang Liwen gONg q ipeng BAI Yicun gUO Bing zhang Yaolin SHI Key Laboratoryof Earth System Numerical Modeling and Application(Chinese Academyof Sciences) College of Earth and Planetary SciencesUniversity of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Computational geodynamics Chinese Academy of SciencesBeijing 100049China Southern Marine Science and Engineering guangdong Laboratory(Zhuhai) Zhuhai 519080China Beijing Yanshan Critical Zone National Field Scientific Observation and Research Station Beijing 101408China Chongqing Earthquake Agency Chongqing 401147 China Institute of Earthquake Forecasting China Earthquake AdministrationBeijing 100036China Hangzhou Applied Acoustics Research Institute Hangzhou 311100China State Key Laboratory of geodesy and Earths Dynamics Innovation Academy for Precision Measurement Science and TechnologyCASWuhan 430077China

*** November 23,2017,an M_(S)5.0 earthquake occurred in Wulong,Chongqing,China,resulting in tens of casualties and considerable economic ***,the epicenter of this earthquake was located in the transition zone from the... 详细信息

关键词： earthquake southeast seismic

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Electron kinetic effects in back-stimulated Raman scattering bursts driven by broadband laser pulses

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Matter and Radiation at Extremes 2024年第4期9卷 54-67页

作者： q.K.Liu L.Deng q.Wang X.zhang F.q.Meng Y.P.Wang Y.q.gao H.B.Cai S.P.Zhu graduate School China Academy of Engineering PhysicsBeijing 100088China Institute of Applied Physics and Computational Mathematics Beijing 100094China School of Nuclear Science and Technology University of Science and Technology of ChinaHefei 230026China Shanghai Institute of Laser Plasma Shanghai 201800China HEDPS Center for Applied Physics and TechnologyPeking UniversityBeijing 100871China School of Physics Zhejiang UniversityHangzhou 310027China

We examine electron kinetic effects in broadband-laser-driven back-stimulated Raman scattering(BSRS)bursts using particle-in-cell *** bursts occur during the nonlinear stage,causing reflectivity spikes and generating large numbers of hot ***-duration simulations are performed to observe burst events,and a simplified model is developed to eliminate the interference of the broadband laser’s random intensity *** the simplified model,we isolate and characterize the spectrum of electron plasma *** spectrum changes from a sideband structure to a turbulence-like structure during the burst.A significant asymmetry in the spectrum is *** asymmetry is amplified and transferred to electron phase space by high-intensity broadband laser pulses,leading to violent vortex-merging and generation of hot *** proportion of hot electrons increases from 6.76%to 14.7%during a single violent burst *** demonstrate that kinetic effects profoundly influence the BSRS evolution driven by broadband lasers.

关键词： scattering kinetic simplified

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Precipitation of multi-type nano-quasicrystals in a Mg-Zn-Y alloy

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Journal of Magnesium and Alloys 2024年第3期12卷 997-1008页

作者： W.Z.Wang X.Z.Zhou L.F.zhang H.q.Ye Z.q.Yang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of ScienceShenyang 110016China Ji Hua Laboratory Foshan 528251China Foshan University Foshan 528231China

Mg-6Zn-1Y(at.%)ribbons with strengthening precipitates of multi-type nanoquasicrystals were prepared by melt-spinning followed by aging *** evolution of the rapidly solidified ribbons during isothermal aging was comprehensively studied using various electron microscopy *** new kinds of decagonal quasicrystals were formed in aged ribbons,in addition to precipitation of nanometer icosahedral ***-resolution observations reveal that both decagonal quasicrystals can be modeled by quasiperiodic tiling with decagonal clusters of 2.5 nm in diameter,but overlap of neighboring clusters in both decagonal quasicrystals is different from the gummelt model observed in other quasicrystals.A shell composed of complex Laves Mg-Zn domains was formed surrounding each decagonal quasicrystal precipitate upon prolonged *** addition,all kinds of nanoprecipitates exhibit excellent structure and size stability at 573 *** findings may have implications for not only fundamental studies about quasicrystals,but also microstructural manipulation of high-performance Mg alloys.

关键词： quasicrystal Mg alloys Rapid solidification Scanning-transmission electron microscopy.

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In situ TEM investigation of electron irradiation and aging-induced high-density nanoprecipitates in an Mg-10gd-3Y-1Zn-0.5Zr alloy

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Journal of Magnesium and Alloys 2024年第5期12卷 1841-1853页

作者： M.Lv H.L.ge q.q.Jin X.H.Shao Y.T.Zhou B.zhang X.L.Ma Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China Materials Science and Engineering Research Center Guangxi University of Science and TechnologyLiuzhou 545006China

In-situ electron irradiation and aging are applied to introduce high-density precipitates in an Mg-10gd-3Y-1Zn-0.5Zr(gWZ1031K,wt.%)alloy to improve the *** results show that the hardness of the Mg alloy after irradiation for 10 h and aging for 9 h at 250℃ is 1.64 gPa,which is approximately 64% higher than that of the samples before being *** is mainly attributed to γ'precipitates on the basal plane after irradiation and the high-density nanoscale β'precipitates on the prismatic plane after aging,which should be closely related to the irradiation-induced homogenous *** latter plays a key role in precipitation *** result paves a way to improve the mechanical properties of metallic materials by tailoring the precipitation through irradiation and aging.

关键词： Mg alloy Electron beam irradiation Hardening Precipitates In-situ TEM

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