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Assessing the Influence of Dykes on the drainage Network of the Shivan River in North Maharashtra

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International Journal of Geosciences 2024年第8期15卷 582-589页

作者： Sandeep B. Bhise Tushar p. Raut Suchitra S. pardeshi Sudhakar D. pardeshi Department of Geography GMD Arts BW Commerce & Science College Sinnar Nashik India Department of Geography Prof. Ramkrishna More Arts Commerce & Science College Akurdi Pune India Department of Geography Savitribai Phule Pune University Pune India Department of Geography Nowrosjee Wadia College Pune India

The prominent linear dyke ridges outcropped in the Narmada-Tapi dykes’ swarm represent an intrusion in the Deccan Traps. Understanding the relationship among the underlying geological structures, the strike of the dykes, and the channel patterns is essential. Dykes act as obstructions to stream flow, causing diversions, and their geometry and patterns significantly impact the rivers and streams that drain and cross the dyke swarm zone. For this study, Google Earth images, LISS III images, and Cartosat DEM were used to delineate the Shivan basin and extract dyke features. The Shivan River basin is a sixth-order drainage system that reflects superimposed drainage systems within the Tapi dyke swarm zone. About 65% (169 km2) of its area is controlled by dyke orientation. The dyke ridges align predominantly in an East-West (E-W) direction, a pattern mainly followed by lower-order streams, which have developed an insequent, transverse drainage network within the dyke swarm zone. In the lower parts of the Shivan basin, where the number of dykes decreases, the drainage network follows the general slope and is oriented in a North-South direction. The Shivan River and its tributaries have partially adjusted to the dyke orientation, resulting in a transverse drainage pattern in areas characterized by parallel dyke ridges.

关键词： Deccan Traps Narmada-Tapi Dyke Swarm Google Earth LISS III Cartosat DEM

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激光多普勒技术 1

Critical size limit of biodegradable nanopartides for enhanced lymph node trafficking and paracortex penetration

1985年

作者：（英）特瑞恩（drain L.E.）王仕康等译

介绍利用多普勒效应检测速度的基本原理和应用, 包括光学及激光基本知识, 光学差拍原理, 参考光技术及差动多普勒技术光学系统, 有关多普勒信号处理及流向判别技术。

ISBN: (纸本)15235·170

关键词：激光多普勒技术

来源：汇雅图书（南通市图书馆... 评论

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Nano Research 2019年第4期12卷 837-844页

作者： Gregory p. Howard Garima Verma Xiyu ke Winter M. Thayer Timothy Hamerly Victoria k. Baxter John E. Lee Rhoel R. Dinglasan Hai-Quan Mao Department of Biomedical Engineering Johns Hopkins School of Medicine Baltimore MD 21218 USA Institute for NanoBioTechnology Johns Hopkins University Baltimore MD 2121 & USA W. Harry Feinstone Department of Molecular Microbiology & Immunology and the Malaria Research Institute Johns Hopkins Bloomberg School of Public Health Baltimore MD 21205 USA Emerging pathogens Institute Department of Infectious Diseases & Immunology College of Veterinary Medicine University of Florida Gainesville FL 32611 USA Department of Materials Science and Engineering Whiting School of Engineering Johns Hopkins University Baltimore MD 21218 USA Johns Hopkins School of Nursing Baltimore MD 21205 USA Department of Molecular and Comparative pathobiology Johns Hopkins School of Medicine Baltimore MD 21205 USA Department of Biomedical Engineering Yale University New Haven CT 06520 USA Translational Tissue Engineering Center Johns Hopkins University School of Medicine Baltimore MD 21231 USA

Lymph node (LN) targeti ng through interstitial drain age of nan oparticles (Nps) is an attractive strategy to stimulate a pote nt immune respo nse, as LNs are the primary site for lymphocyte priming by antigen presenting cells (ApCs) and triggering of an adaptive immune response. Np size has been shown to influence the efficiency of LN-targeting and retention after subcutaneous injection. For clinical translation, biodegradable Nps are preferred as carrier for vaccine delivery. However, the selective "size gateM for effective LN-drainage, particularly the kinetics of LN trafficking, is less well defined. This is partly due to the challenge in generating size-controlled Nps from biodegradable polymers in the sub-100-nm range. Here, we report the preparation of three sets of poly(lactic-co-glycolic)-b-poly(ethylene-glycol)(pLGA-b-pEG) Nps with number average diameters of 20-, 40-, and 100-nm and narrow size distributions using flash nanoprecipitation. Using Nps labeled with a near-infrared dye, we showed that 20-nm Nps drain rapidly across proximal and distal LNs following subcutaneous inoculation in mice and are retai ned in LNs more effectively than Nps with a nu mber average diameter of 40-nm. The drain age of 100-nm Nps was n egligible. Furthermore, the 20-nm Nps showed the highest degree of penetration around the paracortex region and had enhanced access to dendritic cells in the LNs. Together, these data confirmed that small, size-controlled pLGA-b-pEG Nps at the lower threshold of about 30-nm are most effective for LN trafficking, retention, and ApC uptake after s.c. administration. This report could inform the design of LN-targeted Np carrier for the delivery of therapeutic or prophylactic vaccines.

关键词： biodegradable nano particle lymph node trafficking vaccine delivery nanoparticle size an tigen presenting cells in vivo imaging

preparation of fly ash and rice husk ash geopolymer

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International Journal of Minerals,Metallurgy and Materials 2009年第6期16卷 720-726页

作者： S. Detphan p. Chindaprasirt Department of Civil Engineering Khon Kaen University

The geopolymer of fly ash （FA） and rice husk ash （RHA） was prepared. The burning temperature of rice husk, the RHA fineness and the ratio of FA to RHA were studied. The density and strength of the geopolymer mortars with RHA/FA mass ratios of 0/100, 20/80, 40/60, and 60/40 were tested. The geopolymers were activated with sodium hydroxide （NaOH）, sodium silicate, and heat. It is revealed that the optimum burning temperature of RHA for making FA-RHA geopolymer is 690oC. The as-received FA and the ground RHA with 1%-5% retained on No.325 sieve are suitable source materials for making geopolymer, and the obtained compressive strengths are between 12.5-56.0 Mpa and are dependent on the ratio of FA/RHA, the RHA fineness, and the ratio of sodium silicate to NaOH. Relatively high strength FA-RHA geopolymer mortars are obtained using a sodium silicate/NaOH mass ratio of 4.0, delay time before subjecting the samples to heat for 1 h, and heat curing at 60oC for 48 h.

关键词： geopolymer fly ash rice husk ash sodium hydroxide sodium silicate

Dopingless impact ionization MOS(DL-IMOS)—a remedy for complex process flow

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Journal of Semiconductors 2015年第7期36卷 50-58页

作者： Sangeeta Singh p.N.kondekar Department of Electronics and Communication Engineering PDPM-Indian Institute of Information TechnologyDesign and Manufacturing (IIITDM) Jabalpur JabalpurMPIndia

We propose a unique approach for realizing dopingless impact ionization MOS （DL-IMOS） based on the charge plasma concept as a remedy for complex process flow. It uses work-function engineering of electrodes to form charge plasma as surrogate doping. This charge plasma induces a uniform p-region in the source side and an n-region in the drain side on intrinsic silicon film with a thickness less than the intrinsic Debye length. DL-IMOS offers a simple fabrication process flow as it avoids the need of ion implantation, photo masking and complicated thermal budget via annealing devices. The lower thermal budget is required for DL-IMOS fabrication enables its fabrication on single crystal silicon-on-glass substrate realized by wafer scale epitaxial transfer. It is highly immune to process variations, doping control issues and random dopant fluctuations, while retaining the inherent advantages of conventional IMOS. To epitomize the fabrication process flow for the proposed device a virtual fabrication flow is also proposed here. Extensive device simulation of the major device performance metrics such as subthreshold slope, threshold voltage, drain induced current enhancement, and breakdown voltage have been done for a wide range of electrodes work-function. To evaluate the potential applications of the proposed device at circuit level, its mixed mode simulations are also carried out.

关键词： impact ionization MOSFET (IMOS) dopingless work-function engineering Debye length drain induced current enhancement (DICE) random dopant fluctuations (RDF)

Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors:Modeling,Optimization Using particle Swarm Intelligence,and Fabrication

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Computer Modeling in Engineering & Sciences 2019年第6期119卷 577-591页

作者： p.Reena Monica V.T.Sreedevi School of Electronics Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India School of Electrical Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India

A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes(CNTs)Field Effect Transistor(SB CNTFETs)is *** of ambipolar conduction in SB CNTFETs is imperative in order to establish them as the future of IC *** ambipolar nature of SB CNTFETs leads to a great amount of leakage *** a gate oxide dielectric of thickness,tox^50 nm suppresses the ambipolar *** an SB CNTFET,it is the electric field at the source/drain contacts that control the conductance and the band bending length at the contacts is defined by ***,tox is the prime parameter that influences the width of the Schottky barrier and the current in the subthreshold *** to the wide SB,there is a loss in on-current due to tunneling,but the current due to thermionic emission is increased by employing a high-κdielectric such as Zirconium dioxide(ZrO2).This work proposes an approach to suppress ambipolar behavior in SB CNTFETs without decreasing the on *** thickness and dielectric constant of the gate oxide are optimized using the particle swarm optimization(pSO)algorithm to achieve suppression of ambipolar conduction without any loss in *** proposed SB CNTFET was modeled using *** demonstration of the suppression of ambipolar property is also *** SB CNTFETs are fabricated using high-κdielectric such as ZrO2 with different thickness.A device with thin(~5 nm)gate oxide and another device with thick(~50 nm)gate oxide were *** the experimental results,it is observed that the device with the thin gate oxide exhibited ambipolar characteristics and the device with the thick gate oxide did not exhibit ambipolar *** increase in thickness,tox,ensures suppression of ambipolar behavior.

关键词： Ambipolar conduction Carbon nanotubes high-κgate oxide Schottky barrier

Incidence and outcomes of intracerebral haemorrhage with mechanical compression hydrocephalus

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Stroke & Vascular Neurology 2021年第3期6卷 328-336页

作者： Bryce Owen Omar Akbik Michel Torbey Herbert Davis Andrew p Carlson School of Medicine University of New Mexico School of MedicineAlbuquerqueNew MexicoUSA Neurosurgery University of New MexicoAlbuquerqueNew MexicoUSA Neurology University of New MexicoAlbuquerqueNew MexicoUSA Division of Epidemiology Biostatisticsand Preventive MedicineUniversity of New MexicoAlbuquerqueNew MexicoUSA

Introduction Intracerebral haemorrhage(ICH)within deep structures adjacent to the third ventricle is associated with worse outcomes when compared with lobar ICH due to the critical role of deep nuclei in normal neurological *** evidence suggests another contributing factor to poor outcome is obstruction of cerebrospinal fluid outflow by clot burden causing mechanical compression of the third *** authors reviewed the incidence and outcomes of mechanical compression ICH in order to identify this high-risk group which may potentially benefit from minimally invasive *** patients with spontaneous,non-traumatic,supratentorial ICH were identified retrospectively over a 30-month *** imaging was reviewed to assess location of the ICH,volume of the ICH,presence of hydrocephalus requiring external ventricular drain(EVD)placement,and time to clearing of the third *** was then categorised as due to‘primarily intraventricular haemorrhage(IVH)’,‘primarily mechanical compression’or‘mixed’.Functional outcomes at discharge were assessed using the modified Rankin Score(mRS).Results 287 patients met inclusion criteria,of which 39(13.5%)patients developed hydrocephalus that required *** patients had significantly higher mRS at discharge(p≤0.001)when compared with the non-EVD *** location was associated with lower odds of poor outcome compared with thalamic location(OR 0.107-0.560).Mechanical compression hydrocephalus was associated with poor outcome when compared with the primary IVH hydrocephalus subgroup(p=0.037)as well as longer time to clearing of the third ventricle(p=0.006).Conclusions Mechanical obstruction requiring EVD occurs in approximately(21/287)7.3%of all patients with spontaneous supratentorial *** is unknown if the worse morbidity in these subjects is purely related to damage to deep structures surrounding the third ventricle or if secondary damage from hydrocephalus could be mitigated with tar

关键词： hydrocephalus damage primarily

Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications

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Journal of Semiconductors 2017年第6期38卷 52-57页

作者： D.k.panda T.R.Lenka Microelectronics and VLSI Design Group Department of Electronics and Communication Engineering National Institute of Technology Silchar Assam 788010 India

An enhancement mode p-GaN gate AlGaN/GaN HEMT is proposed and a physics based virtual source charge model with Landauer approach for electron transport has been developed using Verilog-A and simulated using Cadence Spectre,in order to predict device characteristics such as threshold voltage,drain current and gate *** drain current model incorporates important physical effects such as velocity saturation,short channel effects like DIBL（drain induced barrier lowering）,channel length modulation（CLM）,and mobility degradation due to *** predicted Id–V（ds）,Id–V（gs）,and C–V characteristics show an excellent agreement with the experimental data for both drain current and capacitance which validate the *** developed model was then utilized to design and simulate a single-pole single-throw（SpST）RF switch.

关键词： CLM DIBL GaN HEMT SpST Verilog-A

Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance

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International Journal of Modeling, Simulation, and Scientific Computing 2016年第3期7卷 386-394页

作者： T.D.Subash T.Gnanasekaran p.Deepthi Nair Department of ECE k.N.S.k.College of Engineering Nagercoil TamilnaduIndia Department of IT R.M.k.College of Engineering and Technology Chennai TamilnaduIndia Department of ECE Annai Vailankanni College of Engineering kanyakumari TamilnaduIndia

The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad *** the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells,semiconductor cells and *** properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device[pardeshi H.,pati S.k.,Raj G.,Mohankumar N.,Sarkar C.k.,***.33(12):124001-1–124001-7,2012].The maximum drain current density is achieved with improving the density of two-dimensional electron gas(2DEG)and with high *** electron mobility transistor(HEMT)structure is used with the different combinations of layers which have different *** such as electron mobility,bandgap,dielectric constant,etc.,are considered differently for each layer[Zhang A.,Zhang L.,Tang Z.,IEEE *** Devices 61(3):755–761,2014].The high electron mobility electrons are now widely used in so many *** proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.

关键词： Heterostructure 2DEG HEMT bandgap