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A Decision Support Method for Truck Scheduling and Storage Allocation Problem at Container

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Tsinghua Science and Technology 2008年第S1期13卷 211-216页

作者：曹瑾鑫史其信 der-horng lee Department of Civil Engineering Tsinghua University Department of Civil Engineering National University of Singapore

Truck scheduling and storage allocation, as two separate subproblems in port operations, have been deeply studied in past decades. However, from the operational point of view, they are highly interdependent. Storage allocation for import containers has to balance the travel time and queuing time of each container in yard. This paper proposed an integer programming model handling these two problems as a whole. The objective of this model is to reduce congestion and waiting time of container trucks in the terminal so as to decrease the makespan of discharging containers. Due to the inherent complexity of the prob-lem, a genetic algorithm and a greedy heuristic algorithm are designed to attain near optimal solutions. It shows that the heuristic algorithm can achieve the optimal solution for small-scale problems. The solutions of small-and large-scale problems obtained from the heuristic algorithm are better than those from the genetic algorithm.

关键词： container terminal vehicle scheduling genetic algorithms heuristic algorithm

Integrated Quay Crane and Yard Truck Schedule Problem in Container Terminals

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Tsinghua Science and Technology 2010年第4期15卷 467-474页

作者：曹瑾鑫史其信 der-horng lee Department of Civil Engineering Tsinghua University Department of Transportation Engineering Inner Mongolia University Department of Civil Engineering National University of Singapore

Quay crane and yard truck scheduling are two important subproblems in container terminal opera- tions which have been studied separately in previous research, This paper proposes a new problem for the integrated quay crane and yard truck scheduling for inbound containers. The problem is formulated as a mixed integer programming （MIP） model. Due to the intractability, a genetic algorithm （GA） and a modified Johnson＇s Rule-based heuristic algorithm （MJRHA） are used for the problem solution. In addition, two closed form lower bounds are given to evaluate the solution accuracy. Computational experiments show that the solution algorithm can efficiently handle the scheduling problem and that the integrated methods are very useful.

关键词： Computational efficiency Containers Cranes Dynamic programming Genetic algorithms Heuristic algorithms Port terminals Railroad yards and terminals Trucks

Classification and technical target of water electrolysis for hydrogen production

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Journal of Energy Chemistry 2024年第8期95卷 554-576,I0012页

作者： Kahyun Ham Sooan Bae Jaeyoung lee Ertl Center for Electrochemistry and Catalysis Gwangju Institute of Science and Technology(GIST)123 Cheomdangwagi-RoBuk-guGwangju 61005South Korea Department of Heterogeneous Reactions Max Planck Institute for Chemical Energy ConversionStiftstr.34-36Mülheim an der RuhrGermany School of Earth Sciences and Environmental Engineering GIST123 CheomdangwagiroBuk-guGwangju 61005South Korea International Future Research Center of Chemical Energy Storage and Conversion Processes GIST123 CheomdangwagiroBuk-guGwangju 61005South Korea eSuS Co. Ltd.#408S6 BuildingSchool of Environment and Energy EngineeringGIST123 CheomdangwagiroBuk-guGwangju 61005South Korea

Continuous efforts are underway to reduce carbon emissions worldwide in response to global climate *** electrolysis technology,in conjunction with renewable energy,is considered the most feasible hydrogen production technology based on the viable possibility of large-scale hydrogen production and the zero-carbon-emission nature of the ***,for hydrogen produced via water electrolysis systems to be utilized in various fields in practice,the unit cost of hydrogen production must be reduced to$1/kg H_(2).To achieve this unit cost,technical targets for water electrolysis have been suggested regarding components in the *** this paper,the types of water electrolysis systems and the limitations of water electrolysis system components are *** suggest guideline with recent trend for achieving this technical target and insights for the potential utilization of water electrolysis technology.

关键词： Water electrolysis Hydrogen production Technical target Electrochemistry

Air-stable,all-dry transferred ReS_(2)/GaSe heterostructure-based NO_(2)gas sensor

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Journal of Materials Science & Technology 2024年第1期168卷 79-87页

作者： A.Venkatesan Hyeyoon Ryu Anupom Devnath Hyungyu Yoo Seunghyun lee Department of Electronic Engineering Kyung Hee UniversityYongin-Si 17104South Korea Department of Electronics and Information Convergence Engineering Kyung Hee UniversityYongin-Si 17104South Korea

Two-dimensional(2D)materials have gained considerable attention in chemical sensing owing to their naturally high surface-to-volume ***,the poor response time and incomplete recovery re-strict their application in practical,high performance gas *** this work,we fabricated air-stable ReS_(2)/GaSe heterostructure-based NO_(2)gas sensors with excellent gas sensing response,recovery,selectiv-ity and a low limit of detection(LOD)toward nitrogen dioxide(NO_(2)).The ReS_(2)/GaSe heterostructure was prepared via mechanical exfoliation and an all-dry transfer *** the sensing measurements,temperature-dependant transport measurements were carried *** Schottky Barrier Height(SBH)of the ReS_(2)/GaSe heterostructure was calculated and the corresponding transport mechanisms were *** fabricated gas sensors showed a significant response enhancement with full reversibility to-ward ppm-level NO_(2)(response of∼17%at 3 ppm,a LOD of∼556 ppb)at an operating temperature of(33°C).In particular,the total response and recovery time of the ReS_(2)/GaSe was revealed to be less than 4 min(∼38 s and∼174 s,respectively)for the 250 ppm concentration,which is one of the best response and recovery time toward ppm-level NO_(2).The excellent sensing performances and recovery characteris-tics of the ReS_(2)/GaSe structure are attributed to its efficient charge separation,unique interlayer coupling and desirable band *** atomically thin,ultrasensitive gas sensor that operates at room tem-perature is a strong technological contender to conventional metal oxide gas sensors,which often require elevated temperatures.

关键词： 2D materials All-dry transfer Gas sensor Van der Waals heterostructure ReS_(2)/GaSe Gas sensing response Transition metal dichalcogenide

Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

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InfoMat 2024年第2期6卷 107-117页

作者： Jingjie Niu Sumin Jeon Donggyu Kim Sungpyo Baek Hyun Ho Yoo Jie Li Ji-Sang Park Yoonmyung lee Sungjoo lee SKKU Advanced Institute of Nanotechnology(SAINT) Sungkyunkwan UniversitySuwonRepublic of Korea Department of Nano Science and Technology Sungkyunkwan UniversitySuwonRepublic of Korea Department of Electrical and Computer Engineering Sungkyunkwan UniversitySuwonRepublic of Korea IMEC HeverleeBelgium Department of Nano Engineering Sungkyunkwan UniversitySuwonRepublic of Korea

The rapid advancement of AI-enabled applications has resulted in an increasing need for energy-efficient computing ***-in-memory is a promising approach for processing the data stored in memory,wherein fast and efficient computations are possible owing to the parallel execution of reconfigurable logic *** this study,a dual-logic-in-memory device,which can simultaneously perform two logic operations in four states,is demonstrated using van der Waals ferroelectric field-effect transistors(vdW FeFETs).The proposed dual-logic-in-memory device,which also acts as a twobit storage device,is a single bidirectional polarization-integrated ferroelectric field-effect transistor(BPI-FeFET).It is fabricated by integrating an in-plane vdW ferroelectric semiconductor SnS and an out-of-plane vdW ferroelectric gate dielectric material—CuInP_(2)S_(6).Four reliable resistance states with excellent endurance and retention characteristics were *** two-bit storage mechanism in a BPI-FeFET was analyzed from two perspectives:carrier density and carrier injection controls,which originated from the out-of-plane polarization of the gate dielectric and in-plane polarization of the semiconductor,*** conventional multilevel FeFETs,the proposed BPIFeFET does not require additional pre-examination or erasing steps to switch from/to an intermediate polarization,enabling direct switching between the four memory *** utilize the fabricated BPI-FeFET as a dual-logic-inmemory device,two logical operations were selected(XOR and AND),and their parallel execution was *** types of logic operations could be implemented by selecting different initial states,demonstrating various types of functions required for numerous neural network *** flexibility and efficiency of the proposed dual-logic-in-memory device appear promising in the realization of next-generation low-power computing systems.

关键词： ferroelectric field-effect transistor in-plane ferroelectricity logic-in-memory out-of-plane ferroelectricity

Study on the performance of thin-film VCSELs on composite metal substrate

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Frontiers of Optoelectronics 2023年第4期16卷 1-11页

作者： William Anderson lee Sanchez Shreekant Sinha Po‑Yu Wang Ray‑Hua horng Institute of Electronics Yang Ming Chiao Tung UniversityHsinchu 30010China

Thin film p-side up vertical-cavity surface-emitting lasers(VCSELs)with 940 nm wavelength on a composite metal(Copper/Invar/Copper;CIC)substrate has been demonstrated by twice-bonding transfer and substrate removing *** CIC substrate is a sandwich structure with a 10µm thick Copper(Cu)layer/30µm thick Invar layer/10µm thick Cu *** Invar layer was composed of Iron(Fe)and Nickel(Ni)with a proportion of 70:*** thermal expansion coefcient of the composite CIC metal can match that of the GaAs *** results that the VCSEL layers can be successfully transferred to CIC metal substrate without *** 1 mA current,the top-emitting VCSEL/GaAs and thin-flm VCSEL/CIC had a voltage of 1.39 and 1.37 V,*** optical output powers of VCSEL/GaAs and VCSEL/CIC were 21.91 and 24.40 mW,*** 50µm thick CIC substrate can play a good heat dissipation function,which results in improving the electrical and optical characteristics of thin flm VCSELs/*** VCSEL/CIC exhibited a superior thermal management capability as compared with VCSEL/*** obtained data suggested that VCSELs on a composite metal substrate not only afected signifcantly the characteristics of thin film VCSEL,but also improved considerably the device thermal performance.

关键词： Thin film VCSELs GaAs substrate Composite metal CIC substrate Twice-bonding transfer Electrical properties Heat dissipation

Low-complexity multiplexer-based normal basis multiplier over GF（2^m）

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2009年第6期10卷 834-842页

作者： Jenn-Shyong horng I-Chang JOU Chiou-Yng lee Institute of Engineering Science and Technology National Kaohsiung First University of Science and Technology Department of Computer Information and Network Engineering Lunghwa University of Science and Technology

We present a new normal basis multiplication scheme using a multiplexer-based algorithm. In this algorithm, the proposed multiplier processes in parallel and has a multiplexer-based structure that uses MUX and XOR gates instead of AND and XOR gates. We show that our multiplier for type-1 and type-2 normal bases saves about 8% and 16%, respectively, in space complexity as compared to existing normal basis multipliers. Finally, the proposed architecture has regular and modular con-figurations and is well suited to VLSI implementations.

关键词：复用器基础乘法器超大规模集成电路空间复杂度异或门乘数模块化

一维/二维半导体器件肖特基势垒高度的调整方法

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Science Bulletin 2024年第9期69卷 1342-1352页

作者：孟建平李正国李舟 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of SciencesBeijing 101400China School of Nanoscience and Engineering University of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Center for Intelligent Sensors and MEMS National University of SingaporeSingapore 117608Singapore

The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal–semiconductor *** or adjusting Schottky barrier height(SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nanosemiconductor devices. These methods encompass the work function of the metals, interface gap states,surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.

关键词： Schottky contact Schottky barrier height Adjustment methods One-and two-dimensional semiconductor

Risk of critical limb ischemia in long-term uterine cancer survivors:A population-based study

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World Journal of Clinical Cases 2022年第36期10卷 13293-13303页

作者： Min-Chi Chen Jung-Jung Chang Miao-Fen Chen Ting-Yao Wang Cih-En Huang Kuan-der lee Chao-Yu Chen Department of Public Health Chang Gung UniversityTaoyuan 333Taiwan Department of Obstetrics and Gynecology Chang Gung Memorial HospitalChiayi 612Taiwan Division of Cardiovascular Disease Department of Internal MedicineChang Gung Memorial HospitalChiayi 612Taiwan Department of Radiation Oncology Change Gung Memorial HospitalLinkouTaoyuan 333Taiwan Division of Hematology and Oncology Department of Internal MedicineChang Gung Memorial HospitalChiayi 612Taiwan Graduate Institute of Clinical Medical Sciences College of MedicineChang Gung UniversityTaoyuan 333Taiwan Department of Medicine Taipei Medical University HospitalTaipei 100Taiwan Department of Medical Research Taichung Veterans General HospitalTaichung 407Taiwan Department of Post-Baccalaureate Medicine College of MedicineNational Chung Hsing UniversityTaichung 402Taiwan Department of Early Childhood Care and Education Shu-Zen Junior College of Medicine and ManagementKaohsiung 821Taiwan

BACKGROUND The risk of critical limb ischemia(CLI)which causes ischemic pain or ischemic loss in the arteries of the lower extremities in long-term uterine cancer(UC)survivors remains unclear,especially in Asian patients,who are younger at the diagnosis of UC than their Western *** To conduct a nationwide population-based study to assess the risk of CLI in UC long-term *** UC survivors,defined as those who survived for longer than 5 years after the diagnosis,were identified and matched at a 1:4 ratio with normal *** Cox models were used to assess the risk of *** From 2000 to 2005,1889 UC survivors who received surgery alone or surgery combined with radiotherapy(RT)were classified into younger(onset ageder(onset age≥50 years,n=995)*** compared with normal controls,the younger patients with diabetes,hypertension,and receiving hormone replacement therapy(HRT)were more likely to develop *** contrast,the risk of CLI was associated with adjuvant RT,obesity,hypertension,and HRT in the older *** the UC survivors,those who were diagnosed at an advanced age(>65 years,aHR=2.48,P=0.011),had hypertension(aHR=2.18,P=0.008)or received HRT(aHR=3.52,P=0.020)were at a higher risk of *** In this nationwide study,we found that the risk factors associated with CLI were similar in both cohorts except for adjuvant RT that was negligible in the younger group,but positive in the older *** the survivors,hypertension,advanced age,and HRT were more hazardous than *** prevention should include CLI as a late complication in UC survivorship programs.

关键词： Uterine cancer Critical limb ischemia Radiotherapy Survivorship