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Research 2024年第2期2023卷 181-190页

作者： Wenming Chai Lindong Li Weidong Zhu dazheng chen Long Zhou He Xi Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China Xi'an Baoxin Solar Technology Co. Ltd.Xi'an710071China

Wide-bandgap(WBG)perovskite solar cells(PSCs)are essential for highly efficient and stable silicon/perovskite tandem solar *** this study,we adopted a synthetic strategy with lead thiocyanate(Pb(SCN)_(2))additive and methylammonium chloride(MACl)posttreatment to enhance the crystallinity and improve the interface of WBG perovskite films with a bandgap of 1.68 *** excessive PbI_(2)was formed at grain boundaries and converted into MAPbI_(3-x)Cl_(x)perovskites,which are utilized to form the graded heterojunction(GHJ)and compressive *** is beneficial for passivating nonradiative recombination defects,suppressing halide phase segregation,and facilitating carrier ***,the device with GHJ delivered a champion efficiency of 20.30%and superior stability in ambient air and under 85℃.Finally,we achieved a recorded efficiency of 30.91%for 4-terminal WBG perovskite/TOPCon tandem silicon solar *** findings demonstrate a promising approach for fabricating efficient and stable WBG PSCs through the formation of GHJ.

关键词： perovskite Graded Highly

Accelerated Sequential Deposition Reaction via Crystal Orientation Engineering for Low-Temperature,High-Efficiency Carbon-Electrode CsPbBr3 Solar Cells

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Energy & Environmental Materials 2024年第1期7卷 172-179页

作者： Zeyang Zhang Weidong Zhu Tianjiao Han Tianran Wang Wenming Chai Jiaduo Zhu He Xi dazheng chen Gang Lu Peng Dong Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology & Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou institute of technology Xidian University Qinghai Huanghe Hydropower Development CO. LTD.

Low-temperature,ambient processing of high-quality CsPbBr3films is demanded for scalable production of efficient,low-cost carbon-electrode perovskite solar cells（PSCs）.Herein,we demonstrate a crystal orientation engineering strategy of PbBr2precursor film to accelerate its reaction with CsBr precursor during two-step sequential deposition of CsPbBr3films.

关键词： carbon-electrode perovskite solar cells crystal orientation engineering CsPbBr3 low temperature two-step sequential deposition

Interfacial Voids Trigger Carbon-Based, All-Inorganic Cs Pb IBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

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Nano-Micro Letters 2020年第7期12卷 121-134页

作者： Weidong Zhu Zeyang Zhang Dandan chen Wenming Chai dazheng chen Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology and Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi’an 710071People’s Republic of China College of Science Xi’an Shiyou UniversityXi’an 710065ShaanxiPeople’s Republic of China

A novel interface design is proposed for carbon-based,all-inorganic CsPbIBr2 perovskite solar cells(PSCs)by introducing interfacial voids between TiO2 electron transport layer and CsPbIBr2 *** with the general interfacial engineering strategies,this design exempts any extra modification layer in final *** importantly,the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial e ***,they promote the light scattering in CsPbIBr2 film and thereby boost absorption ability of the resulting CsPbIBr2 ***,they suppress recombination of charge carriers and thus reduce dark saturation current density(J0)of the ***,interfacial voids enlarge built-in potential(Vbi)of the PSCs,awarding increased driving force for dissociating photo-generated charge ***,the PSC yields the optimized e ciency of 10.20%coupled with an open-circuit voltage(Voc)of 1.338 *** Voc achieved herein represents the best value among CsPbIBr2 PSCs reported ***,the non-encapsulated PSCs exhibit an excellent stability against light,thermal,and humidity stresses,since it remains^97%or^94%of its initial e ciency after being heated at 85℃for 12 h or stored in ambient atmosphere with relative humidity of 30–40%for 60 days,respectively.

关键词： All-inorganic perovskite solar cells Cs Pb IBr2 Photovoltage Interfacial engineering Stability

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga_(2)O_(3)p-n异质结与器件

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Science China Materials 2024年第5期67卷 1646-1653页

作者：张泽雨林宋庆文刘丁赫闫奕如陈昊穆昌根陈大正冯倩张进成张玉明郝跃张春福 National Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an710071China

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真... 详细信息

在氧化镓(Ga_(2)O_(3))材料p型掺杂困难的背景下,Ga_(2)O_(3)p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga_(2)O_(3)异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga_(2)O_(3)异质结.其中,NiO(111)和β-Ga_(2)O_(3)(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga_(2)O_(3)之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga_(2)O_(3)异质p-n结的制备提供了一种低成本、高质量的方法.

关键词： β-Ga_(2)O_(3) heterojunction structure p-n junctions NiO mist-CVD

Slow halide exchange in CsPbIBr_(2) films for high-efficiency,carbon-based,all-inorganic perovskite solar cells

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Science China Materials 2021年第9期64卷 2107-2117页

作者： Zeyang Zhang Dandan chen Weidong Zhu Junxiao Ma Wenming Chai dazheng chen Jincheng Zhang Chunfu Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi’an710071China College of Science Xi’an Shiyou UniversityXi’an710065China

Halide exchange offers a versatile way to modify the properties of halide perovskites,but it is particularly challenging to slow the reaction rate to restrain defect growth in the ***,we propose a slow halide exchange strategy to simultaneously fine-tune the optical and microstructural characteristics of CsPbIBr_(2) films by physically pairing CsPbIBr_(2) and CH_(3)NH_(3)PbI_(3) *** a proper heating treatment is applied,halide exchange of Br^(-)and I^(-)ions between the films is activated,and the reaction rate can be well-controlled by the heating recipe,in which a high temperature can accelerate the exchange reaction,while a low temperature slows or stops *** using an optimal halide exchange temperature(110℃)and time(2 h),the parent CsPbIBr_(2) film was transformed into high-quality CsPbI_(1+x)Br_(2-x) film,featuring an extended absorption onset from 590 to 625 nm,coarsened grains,improved crystallinity,reduced surface roughness,suppressed halide phase segregation,and identical stability to the pristine ***,the efficiency of a carbon-based,all-inorganic perovskite solar cell(PSC)was boosted to 10.94%,which was much higher than that of the pristine CsPbIBr_(2) film(8.21%).The CsPbI_(1+x)Br_(2-x) PSC also possessed excellent tolerance against heat and moisture stresses.

关键词： halide exchange slow reaction rate CsPbIBr_(2) defects all-inorganic perovskite solar cells

Ultrahigh fill-factor all-inorganic CsPbBr_(3)perovskite solar cells processed from two-step solution method and solvent additive strategy

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Journal of Materiomics 2023年第4期9卷 717-724页

作者： dazheng chen Yibing He Gang Fan Zeyang Zhang Weidong Zhu He Xi Long Zhou Chunfu Zhang Jincheng Zhang Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology&Shaanxi Joint Key Laboratory of Graphene School of MicroelectronicsXidian UniversityXi'anShaanxi710071China

All-inorganic CsPbBr_(3)perovskite solar cells(PSCs)have attracted more attentions due to the excellent environmental stability,however,the wide bandgap and relatively poor crystallinity of CsPbBr_(3)have been the main obstacle to improve their power conversion efficiency(PCE).Herein,we proposed an efficient and simple strategy of precursor additive in the two-step aqueous-solution method,the resulted CsPbBr_(3)film has achieved more uniform grain size,almost pure perovskite phase,smoother surface,less defects,enhanced light absorption and longer carrier *** is due to the rapid evaporation of additive(IPA and CH_(3)OH)in the CsBr/H_(2)O precursor leads to a relatively higher local CsBr concentration on the surface of PbBr_(2),which can provide more nucleation sites and accelerate the crystallization of ***,when utilizing the optimal additive of 5%(in volume)IPA,the HTM-free carbonbased CsPbBr_(3)PSCs obtained a PCE improvement from 9.09%to 10.29%,and an ultrahigh fill factor(FF)of 85.21%.What is more,by adding 0.1 mol/L PbCl_(2)into the PbBr_(2)solution in the first step,the open circuit voltage of device has increased from 1.36 V to 1.48 V,the champion PCE reached 10.37%(steady output PCE of 10.17%),and the non-encapsulated device could maintain 85%of its initial efficiency after 50 d in the *** work provides a cost-effective approach to grow CsPbBr_(3)film and boosts the efficiency benchmark of the CsPbBr_(3)PSCs to more than 10%,it is desirable that the highly efficient and stable CsPbBr_(3)PSCs can be developed in future.

关键词： CsPbBr_(3) Aqueous solution Two-step method Solvent additive High fill factor

Research on the hydrogen terminated single crystal diamond MOSFET with MoO_3 dielectric and gold gate metal

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Journal of Semiconductors 2018年第7期39卷 72-76页

作者： Zeyang Ren Jinfeng Zhang Jincheng Zhang Chunfu Zhang Pengzhi Yang dazheng chen Yao Li Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University

The single crystal diamond with maximum width about 10 mm has been grown by using microwave plasma chemical vapor deposition equipment. The quality of the grown diamond was characterized using an X-ray diffractometer. The FWHM of the（004） rocking curve is 37.91 arcsec, which is comparable to the result of the electronic grade single crystal diamond commercially obtained from Element Six Ltd. The hydrogen terminated diamond field effect transistors with Au/Mo03 gates were fabricated based on our CVD diamond and the characteristics of the device were compared with the prototype Al/MoO3 gate. The device with the Au/MoO3 gate shows lower on-resistance and higher gate leakage current. The detailed analysis indicates the presence of aluminum oxide at the Al/MoO3 interface, which has been directly demonstrated by characterizing the interface between A1 and MoO3 by X-ray photoelectron spectroscopy. In addition, there should be a surface transfer doping effect of the MoO3 layer on H-diamond even with the atmospheric-adsorbate induced 2 DHG preserved after MoO3 deposition.

关键词： single crystal diamond MOSFET MoO3 transfer doping

An Investigation of Manifold Learning for Chinese Handwriting Analysis

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International Journal of Systems and Control

International Journal of Systems and Control 2007年第3期 213-220页

作者： chen Guoming ,Yin jian , chen dazheng Department of Computer Science University of Sun Yat-sen Guangzhou,GuangDong Province 510275,China

In this paper, we propose a nonlinear dimensionality reduction method aimed at extracting lower-dimensional features relevant for personal identification based on Chinese handwriting tasks. As a result, the handwriting may lie on a low dimensional submanifold of the high dimensional space of all possible scripts. And a number of manifold learning algorithms are applied to handwriting data in an effort to extract useful low dimensional structure from the high dimensional handwriting signal .The ability of these manifold learning algorithms to separate different person in a low dimensional space is evaluated and compared to a classical linear dimensionality reduction method. Results indicate that manifold learning algorithms outperform classical methods in low dimensions and are capable of discovering useful manifold structure in Chinese handwriting data. In the Chinese handwriting classification task, we also use SVM classifiers on these lower-dimensional features to test the accurateness and efficiency.

关键词： Chinese handwriting analysis manifold learning dimensionality reduction SVM

Wide-range-adjusted threshold voltages for E-mode AlGaN/GaN HEMT with a p-SnO cap gate

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Science China Materials 2022年第3期65卷 795-802页

作者： dazheng chen Peng Yuan Shenglei Zhao Shuang Liu Qian Xin Xiufeng Song Shiqi Yan Yachao Zhang He Xi Weidong Zhu Weihang Zhang Jiaqi Zhang Hong Zhou Chunfu Zhang Jincheng Zhang Yue Hao State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China State Key Laboratory of Crystal Materials Center of Nanoelectronics and School of MicroelectronicsShandong UniversityJinan 250100China

p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device ***,the more cost-effective cap layer has attracted wide attention in GaN-based *** this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and *** results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 ***,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 *** is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based *** work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.

关键词： p-SnO gate cap E-mode AlGaN/GaN HEMT positive threshold voltage wide-range adjustment silvaco ATLAS sputtered p-SnO

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EH36钢的氢陷阱及氢脆敏感性

金属热处理 2024年第3期49卷 147-152页

作者：陈翠林文洋李维娟张大征李振楠辽宁科技大学材料与冶金学院辽宁鞍山114051

采用氢渗透测试、慢拉伸试验等研究手段,探究EH36钢表面、1/4和1/2厚度处的氢陷阱、氢扩散系数及氢脆敏感性。结果表明,表面及1/4厚度处的显微组织主要为贝氏体,表面处的显微组织较为细小,1/2厚度处主要为铁素体和珠光体。可逆和不可逆... 详细信息

采用氢渗透测试、慢拉伸试验等研究手段,探究EH36钢表面、1/4和1/2厚度处的氢陷阱、氢扩散系数及氢脆敏感性。结果表明,表面及1/4厚度处的显微组织主要为贝氏体,表面处的显微组织较为细小,1/2厚度处主要为铁素体和珠光体。可逆和不可逆氢陷阱密度由表面到1/2厚度处依次降低,氢扩散系数随之依次增大。随充氢电流密度或时间的增加,各厚度处拉伸试样的屈服强度、抗拉强度、伸长率均有不同程度的降低,氢脆敏感性随之增大;拉伸断口形貌由呈韧性断裂特征的韧窝状逐渐向呈脆性断裂特征的河流状花样转变。表面处的氢脆敏感性最小,1/2厚度处的氢脆敏感性最大;在1/2厚度处的拉伸断口观察到了一些氢致裂纹。

关键词： EH36钢氢陷阱氢脆敏感性