检索结果-南通市图书馆

Fabrication and characteristics of ZnO MOS capacitors with high-K HfO_2 gate dielectrics

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Technological Sciences) 2010年第9期53卷 2333-2336页

作者： han DeDong,WANG Yi,ZhanG ShengDong,SUN Lei,KANG JinFeng,liu xiaoyan,du gang,liu LiFeng & han ruqi institute of microelectronics,peking university,beijing 100871,china 1. institute of microelectronics Peking University Beijing 100871 China

ZnO thin films are first deposited on n-type silicon by radio frequency (rf) magnetron sputtering at room *** high-K HfO2 gate dielectrics thin films are deposited on ZnO films to form metal-oxide semiconductor (MOS) *** temperature to fabricate ZnO MOS capacitors is 400°C,and the low temperature process is applicable for thin film transistors,flat-panel display (FPD),flexible display,*** electronic availability of ZnO thin films,which serve as a semiconductor material for MOS capacitors with HfO2 gate dielectric is *** frequency (1 MHz) capacitance-voltage (C-V) and current-voltage (I-V) characteristics of ZnO-based MOS capacitors are *** thermal stability and electronic stability of the ZnO capacitors are investigated,*** results indicate that good electrical characteristics can be obtained on ZnO substrates with high-K HfO2 gate ***,the ZnO capacitors can exhibit high thermal and electronic stabilities.

关键词： ZnO high-K HfO2 low temperature process

维普期刊数据库

Simulation 70nm MOSFET by a 2-D Full-Band Monte Carlo Device Simulator with a Quantum Mechanical Correction to the Potential

在线全文

学校读者我要写书评

暂无评论

Simulation 70nm MOSFET by a 2-D Full-Band Monte Carlo Device...

2001 6～(th) International Conference on Solid-State and Integrated Circuit Technology

作者： gang du Lei Sun xiaoyan liu ruqi han institute for microelectronics peking university 100871 beijing china

＜正＞The characterization of a 70nm MOSFET issimulated using a 2-D full-band Monte Carlo devicesimulator that has included the effect of quantummechanical correction of the *** influence ofquantum mechanical correcti...

关键词：

TWO DIMENSIONAL DEVICE SIMULATION OF A-SI TFT

在线全文

cnki会议

学校读者我要写书评

暂无评论

TWO DIMENSIONAL DEVICE SIMULATION OF A-SI TFT

The Third International Conference on Solid State and Integrated Circuit Technology

作者： liu xiaoyan han ruqi Guan Xudong institute of microelectronics peking university beijing 100871 china

＜正＞ In this paper,a two dimensional device simulator of amorphous silicon thin-film transistor is introduced,this simulator can analyze the characteristics of a-Si TFT,such as potential distribution,electron density distribution,I-V characteristics,overlap capacitance,as well as breakdown *** the simulator the interface states are *** simulator will be helpful for the optimization and design of a-Si TFT.

关键词：

A MODIHED MODEL OF HIGH-Tc SUPERCONduCTING INTERCONNECT PROPAGATION CHARACTERISTICS FOR VLSI PACKAGING

在线全文

cnki会议

学校读者我要写书评

暂无评论

A MODIHED MODEL OF HIGH-Tc SUPERCONDUCTING INTERCONNECT PROP...

1995 4th International Conference on Solid-State and Integrated Circuit Technology

作者： Jinfeng Kang ruqi han Yangyuan Wanginstitute of microelectronics peking university beijing 100871 china

＜正＞ Using a generalized two-fluid model, which can describe the anomalous superconducting properties of high-Tc superconductors, a modified model for the propagation characteristics of high-Tc superconducting （HTS） interconnect for VLSI packaging is given. By means of the numerical results, a simple semi-empirical expression for the rise time is given. Meanwhile, those results based on the modified model are compared with ones based on the conventional model.

关键词：

A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory

在线全文

cnki会议

学校读者我要写书评

暂无评论

Science china Earth Sciences 2016年第12期59卷 188-197页

作者： Zhiyuan LUN gang du Kai ZHAO xiaoyan liu Yi WANG institute of microelectronics Peking University School of Information and Communication Beijing Information Science and Technology University

This work presents a self-consistent two-dimensional(2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data,which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory.

关键词： charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation

维普期刊数据库

Torsion-Mirror Actuators with Compound Electrostatic Driving Structures

在线全文

学校读者我要写书评

暂无评论

Torsion-Mirror Actuators with Compound Electrostatic Driving...

2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Wengang Wu~*,Qinghua Chen,Xiang han,Guizhen Yan,and Yilong Hao institute of microelectronics,peking university,beijing 100871,china

A novel kind of torsion-mirror actuators with compound electrostatic driving structures is *** actuators are fabricated in SOI wafers through a newly developed set of surface-and-bulk-mixed-silicon-micromachining *** advanced compound driving structures are made up of plate-electrode couple drives and vertical comb *** and analyses indicate that the compound driving structures are able to decrease about 34 percent the yielding voltages of actuating the mirrors to achieve 90°*** micro-mirrors of the actuators can cyclically vibrate a few 10 times at least between 0°and 90°,and their shortest actuating time can reach an estimated less than 2.5 *** regard of the actuators,a theoretical model of intrinsic frequency of the tilting vibration of their movable structures is *** to the model,the frequency is a nonlinear function of the rotation angle of the mirrors.

关键词： MEMS torsion-mirror actuator compound electrostatic driving mixed silicon micromachining

GaAs-GaP Core-Shell Nanowire Transistors:A Computational Study

在线全文

cnki会议

学校读者我要写书评

暂无评论

GaAs-GaP Core-Shell Nanowire Transistors:A Computational Stu...

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Yuhui He1 Yuning Zhao1 Chun Fan2 xiaoyan liu1 Jinfeng Kang1 and ruqi han1 1 institute of microelectronics peking university beijing 100871 P. R. china 2 Computer Center peking university beijing 100871 china institute of microelectronics Peking University Computer Center Peking University

We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k·p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as the shell thickness increases. We analyze its impact on the transistor performance, and our simulation results indicate that in order to achieve a good ON/OFF current ratio the epitaxial shell should be grown thin enough.

关键词：

A Finite Volume Method for the Multi Subband Boltzmann Equation with Realistic 2D Scattering in Double Gate MOSFETs

在线全文

cnki会议

学校读者我要写书评

暂无评论

Communications in Computational Physics 2011年第7期10卷 305-338页

作者： Tiao Lu gang du xiaoyan liu Pingwen Zhang School of Mathematical Sciences LMAM and CAPTPeking UniversityBeijing 100871China institute of microelectronics Peking UniversityBeijing 100871China

We propose a deterministic solver for the time-dependent multi-subband Boltzmann transport equation(MSBTE)for the two dimensional(2D)electron gas in double gate metal oxide semiconductor field effect transistors(MOSFETs)with flared out source/drain contacts.A realistic model with six-valleys of the conduction band of silicon and both intra-valley and inter-valley phonon-electron scattering is *** propose a second order finite volume method based on the positive and flux conservative(PFC)method to discretize the Boltzmann transport equations(BTEs).The transport part of the BTEs is split into two *** is a 1D transport problem in the position space,and the other is a 2D transport problem in the wavevector *** order to reduce the splitting error,the 2D transport problem in the wavevector space is solved directly by using the PFC method instead of splitting into two 1D *** solver is applied to a nanoscale double gate MOSFET and the current-voltage characteristic is *** of the numerical results with ballistic solutions show that the scattering influence is not ignorable even when the size of a nanoscale semiconductor device goes to the scale of the electron mean free path.

关键词： Double gate MOSFET multi subband Boltzmann transport equation 2D electron gas deterministic solver PFC method

正常态金属与氧化物高温超导薄膜界面扩散特性分析

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

物理学报 1995年第11期44卷 1831-1838页

作者：康晋锋陈新王佑祥韩汝琦熊光成连贵君李杰吴思诚北京大学微电子学研究所北京100871 中国科学院物理研究所和半导体研究所表面物理国家重点实验室北京100080 北京大学物理系北京100871

利用二次离子质谱(SIMS)技术,分析了Ag和A1与YBa_2Cu_3O_(7-x)(YBCO)超导薄膜接触界面互扩散.结果显示,它们有不同的互扩散特征.利用SIMS的分析结果,可以很好地理解经高温热处理后,Ag/YBCO和A1/YBCO样品具有不同界面电学性质的原因.

关键词： YBCO 超导体银铝界面扩散

维普期刊数据库