A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory

作     者：Zhiyuan LUN Gang DU Kai ZHAO Xiaoyan LIU Yi WANG 

作者机构：Institute of Microelectronics Peking University School of Information and Communication Beijing Information Science and Technology University 

出 版 物：《Science China Earth Sciences》 (中国科学（地球科学英文版）)

年 卷 期：2016年第59卷第12期

页      面：188-197页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by National Natural Science Foundation of China (Grant No. 91230107) National Basic Research Program of China (973) (Grant No. 2013CBA01604) National High Technology Research and Development Program of China (863) (Grant No. 2015AA016501) 

主　　题：charge trapping memory semiconductor device modeling 2-D charge transport 3-D NAND flash device modeling and simulation 

摘      要：This work presents a self-consistent two-dimensional(2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated for different gate stack compositions and temperatures. The simulator is able to describe the charge transport behavior along bitline and tunneling directions under different operations. Good agreement has been made with experimental data,which hence validates the implemented physical models and altogether confirms the simulation as a valuable tool for evaluating the characteristics of three-dimensional NAND flash memory.