GaAs-GaP Core-Shell Nanowire Transistors:A Computational Study

作     者：Yuhui He1 Yuning Zhao1 Chun Fan2 Xiaoyan Liu1 Jinfeng Kang1 and Ruqi Han1 1 Institute of Microelectronics Peking University Beijing 100871 P. R. China 2 Computer Center Peking University Beijing 100871 China 

作者单位：Institute of MicroelectronicsPeking University Computer CenterPeking University 

会议名称：《2008 9th International Conference on Solid-State and Integrated-Circuit Technology》

会议日期：2008年

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：NKBRP 2006CB302705 NSFC 60606013 

摘      要：We evaluate the performance of GaAs-GaP core-shell nanowire field effect transistors by employing a semiclassical ballistic transport model and a k·p calculation of the valence band structures including the strain effect. We find that the strain will induce substantial modulation on the nanowire valence band structures and this modulation will push more conduction channels into the bias window as the shell thickness increases. We analyze its impact on the transistor performance, and our simulation results indicate that in order to achieve a good ON/OFF current ratio the epitaxial shell should be grown thin enough.