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强激光与粒子束 2024年第10期36卷 44-52页

作者： Mao Xinyi chai changchun Li Fuxing Lin Haodong Zhao Tianlong Yang Yintang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xidian UniversityXi’an 710071China

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection *** paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP *** on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the *** the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse *** results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the *** addition,pulse signals with different attributes will change the damage threshold of the *** results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

关键词： fast rising time electromagnetic pulse damage effect electrostatic discharge protection circuit damage location prediction

Modeling and understanding of the frequency dependent HPM upset susceptibility of the CMOS inverter

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Science China(Information Sciences) 2015年第8期58卷 182-192页

作者： YU XinHai chai changchun LIU Yang YANG YinTang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

In this paper, we interpret and, for the first time, model a frequency dependent high-power microwave(HPM) upset susceptibility. We constructed the analytical models of the total amount of injected charges N inj, the excess carrier density distribution in P-Substrate, and the frequency dependent HPM upset susceptibility level. The models are validated by simulated results and experimental data, respectively. Results reveal that N inj is proportional to fαwhile the exponent α should be adjusted to-0.525. The excess carrier density distribution behaves the frequency dependence as well; the dependence is attributable to the fact that the AC field within the CMOS inverter varies too rapidly for the carriers to follow at high frequency. Meanwhile,the HPM upset susceptibility level is a decreasing function of f. The f dependent HPM upset susceptibility model is verified to be reliable and able to quickly estimate the susceptibility level of CMOS inverter considering IC technology, layout parameters, pulse properties, and operating environment simultaneously. Besides, the empirical formula P = A · fαis proposed to provide instant estimation to the HPM upset power threshold. In conclusion, by aid of the analytical model, we acquired the influence of the layout parameter LB on the HPM susceptibility and demonstrated that the CMOS inverter with minor LB is more susceptible to HPM.

关键词： high power microwave frequency upset CMOS analytical model

Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

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Science China(Technological Sciences) 2023年第8期66卷 2373-2380页

作者： WANG Lei chai changchun ZHAO TianLong LI FuXing QIN YingShuo YANG YinTang Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi’an 710071China

High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal *** on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation *** results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be *** effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device *** results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.

关键词： GaN HEMT mechanical-electrical synergy damage electromechanical coupling elastic energy high-power microwave

First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO

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Journal of Wuhan University of Technology(Materials Science) 2015年第3期30卷 467-472页

作者：乔丽萍 chai changchun YANG Yintang YU Xinhai SHI Chunlei Xizang Key Laboratory of Optical Information Processing and Visualization Technology School of Information Engineering Xizang University for Nationalities Key Lab of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University

The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB（Heavy Hole Band） and LHB（Light Hole Band）, HHB and CSB（Crystal Splitting Band） in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given.

关键词： strain band gap Splitting energies effective mass

Strain effects on valence bands of wurtzite ZnO

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Science China(Physics,Mechanics & Astronomy) 2013年第9期56卷 1684-1688页

作者： QIAO LiPing chai changchun JIN Zhao YANG YinTang MA ZhenYang Key Lab of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University School of Information Engineering Tibet University for Nationalities

Based on the k.p theory of Luttinger-Kohn and Bir-Pikus,analytical E-k solutions for the valence band of strained wurtzite ZnO materials are *** effects on valence band edges and hole effective masses in strained wurtzite ZnO materials are also *** comparison with unstrained ZnO materials,apparent movement of valence band edges such as "light hole band","heavy hole band" and "crystal splitting band" at Γ point is found in strained wurtzite ZnO ***,effective masses of "light hole band","heavy hole band" and "crystal splitting band" for strained wurtzite ZnO materials as the function of stress are *** analytical results can provide a theoretical foundation for the understanding of physics of strained ZnO materials and its applications with the framework for an effective mass theory.

关键词： strained ZnO band structure effective mass

Negative differential resistance in single-walled SiC nanotubes

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Chinese Science Bulletin 2008年第23期53卷 3770-3772页

作者： YANG YinTang SONG diuXu LIU HongXia chai changchun Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education School of Microelectronics Xi-dian University Xi'an 710071 China

A two-probe system was established for a finite (7, 0) silicon carbide (SiC) nanotube coupled to Au (111) surfaces via Au-C bonds. Using the non-equilibrium Green function (NEGF) combined with density functional theory (DFT), the above system was studied for its electronic transport properties. Negative differential resistance (NDR) was observed when the bias voltage was greater than 1.4 V. Because the transport properties of the system were sensitive to the applied bias voltage, NDR might be caused by the fluctuation of the transmission coefficient with the bias voltage.

关键词：不平衡绿色功能炭化硅纳米管传输方式逆向电阻

A high EMS daisy-chain SPI interface for battery monitor system

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Journal of Semiconductors 2017年第3期38卷 120-124页

作者： Qidong Zhang Yintang Yang changchun chai Institute of Microelectronics Xidian University Xi'an 710071 China

A high EMS current-mode SPI interface for battery monitor IC（BMIC） is presented to form a daisychain bus configuration for the cascaded BMICs and the communication between the MCU and master *** on analog and digital mixed filtering technique,the proposed daisy-chain can avoid the isolated communication issue in electromagnetic interference environment,and reduce the extensively required I/O ports of MCU,at the same time reduce the system *** proposed daisy-chain interface was introduced in a 6-ch battery monitor IC which was fabricated with 0.35μ m 30 V BCD *** measurement result shows that the presented daisy-chain SPI interface achieves better EMS performance with different EMI injection while just consuming a total operation current up to 1 m A.

关键词： SPI daisy-chain EMS EMI battery monitor battery management

60 V tolerance full symmetrical switch for battery monitor IC

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Journal of Semiconductors 2017年第6期38卷 97-101页

作者： Qidong Zhang Yintang Yang changchun chai Institute of Microelectronics Xidian University Xi'an 710071 China

For stacked battery monitoring IC high speed and high precision voltage acquisition requirements,this paper introduces a kind of symmetrical type high voltage switch *** kind of switch circuit uses the voltage following structure,which eliminates the leakage path of input *** the same time,this circuit adopts a high speed charge pump structure,in any case the input signal voltage is higher than the supply voltage,it can fast and accurately turn on high voltage MOS devices,and convert the battery voltage to an analog to digital *** proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process;simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply.

关键词： BMS BMI symmetry switch high voltage

The influence of pulsed parameters on the damage of a Darlington transistor

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Journal of Semiconductors 2018年第9期39卷 38-43页

作者： Qiankun Wang changchun chai Yuqian Liu Yintang Yang School of Microelectronics Xidian University Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices

Theoretical research on the heat accumulation effect of a Darlington transistor induced by high power microwave is conducted,and temperature variation as functions of pulse repetitive frequency（PRF）and duty cycle（DC）are *** to the distribution of the electronic field and the current density in the Darlington transistor,the research of the damage mechanism is carried *** results show that for repetitive pulses with the same pulse widths and different PRFs,the value of temperature variation increases with PRF increases,and the peak temperature has almost no change when PRF is lower than 200 k Hz;while for the repetitive pulses with the same PRF and different pulse widths,the larger the pulse width is,the greater temperature variation *** response of the peak temperature caused by a single pulse demonstrates that there is no temperature variation when the rising time is much shorter than the falling *** addition,the relationship between the temperature variation and the time during the rising edge time as well as that between the temperature variation and the time during the falling edge time are obtained utilizing the curve fitting ***,for a certain average power,with DC increases the value of temperature variation decreases.

关键词： Darlington transistor high power microwave pulse repetitive frequency duty cycle

High-power microwaves response characteristics of silicon and GaAs solar cells

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Journal of Semiconductors 2022年第11期43卷 54-60页

作者： Xiangrui Meng changchun chai Fuxing Li Yi Sun Yintang Yang Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory Xidian UniversityXi’an 710071China

The high-power microwave(HPM)effect heats solar cells,which is an important component of a *** creates a serious reliability problem and affects the normal operation of a *** this paper,the different HPM response characteristics of two kinds of solar cells are comparatively researched by *** results show that there are similarities and differences in hot spot distribution and damage mechanisms between both kinds of solar cell,which are related to the amplitude of *** addition,the duty cycle of repetition frequency contributes more to the temperature accumulation of the solar cells than the carrier *** results will help future research of damage assessment technology,reliability enhancement and the selection of materials for solar cells.

关键词： solar cells silicon GaAs HPM repetition frequency response characteristics