Negative differential resistance in single-walled SiC nanotubes

作     者：YANG YinTang SONG diuXu LIU HongXia CHAI ChangChun 

作者机构：Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education School of Microelectronics Xi-dian University Xi'an 710071 China 

出 版 物：《Chinese Science Bulletin》 (Chin. Sci. Bull.)

年 卷 期：2008年第53卷第23期

页      面：3770-3772页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the National Natural Science Foundation of China for Distinguished Young Scholars (Grant No. 60725415) 

主　　题：不平衡绿色功能 炭化硅纳米管 传输方式 逆向电阻 

摘      要：A two-probe system was established for a finite (7, 0) silicon carbide (SiC) nanotube coupled to Au (111) surfaces via Au-C bonds. Using the non-equilibrium Green function (NEGF) combined with density functional theory (DFT), the above system was studied for its electronic transport properties. Negative differential resistance (NDR) was observed when the bias voltage was greater than 1.4 V. Because the transport properties of the system were sensitive to the applied bias voltage, NDR might be caused by the fluctuation of the transmission coefficient with the bias voltage.