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PREPARATION AND Ch.RACTERIZATION OF POLY-CRYSTALLINE SILICON Th.N FILM

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Acta Metallurgica Sinica(English.Letters) 2003年第4期16卷 309-312页

作者： Y.F. h., h. {2., Z.Y. Liu and L.S.w.nCollege of Mech.nical Engineering, South.2. University of Tech.ology, guangzhou 510640, chinaguangzhou institute of energy {12., Th. Ch.nese Academy of Sciences, guangzhou 510070, china College of Mech.nical Engineering South China University of Technology Guangzhou 510640 China

Poly-crystalline silicon th.n film h.s {2.g potential of reducing th. cost of solar cells. In th.s paper th. preparation of th.n film is introduced, and th.n th. morph.logy of poly-crystalline th.n film, is discussed. On th. film {12. developed poly-crystalline silicon th.n film solar cells {12.th.efficiency up to 6.05% {12.th.ut anti-reflection coating.

关键词： poly-crystalline silicon th.n film RTCVD (rapid th.rmal ch.m- ical vapor deposition) SSP (silicon sh.et from pow.er)

PREPARATION AND SURFACE Ch.RACTERIZATION OF TiO2.Th.N FILMS ON GLASS {2. MAGNETRON SPUTTERING METh.D

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Acta Metallurgica Sinica(English.Letters) 2002年第2期15卷 207-209页

作者： L.S.Yin1,3), h. shen2. and J.X. Zh.ng3) 1)College of Information Engineering, Central South.University, Ch.ngsh. 410075, china 2.guangzhou institute of energy conversion, CAS, guangzhou 510070, china 3)Department of Ph.sics, Zh.ngsh.n University, Guang College of Information Engineering Central South University Changsha 410075 China

Ti th.n films w.re firstly deposited on glass su{2.trates {2. magnetron sputtering meth.d, th.n sintered th. Ti th.n films in air atmosph.re and finally TiO2.transparence th.n films on glass su{2.trates w.re o{2.ained. Th. structure and surface morph.logies of th. th.n films w.re ch.racterized {2. X-ray diffraction and SEM. Th. grow.h.process of th. th.n films h.s {2.en o{2.erved. Th. annealing time and annealing temperatures h.ve an affect on th. grow.h.of th. films.

关键词： TiO2. th.n film. magnetron sputtering

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辐射致冷用氮化硅薄膜的微观结构和光学性质

太阳能学报 2001年第3期22卷 302-305页

作者：梁宗存沈辉李戬洪中国科学院广州能源研究所广州510070

采用射频等离子体化学气相沉积 (PECVD)法制备了SiNx 薄膜。用X 射线荧光光谱、红外吸收光谱、红外反射光谱以及扫描电镜对薄膜的成分、结构、表面形貌和光学性质进行了初步研究。X 射线荧光分析表明SiNx 薄膜的组成为SiN0 .3 5。从红... 详细信息

采用射频等离子体化学气相沉积 (PECVD)法制备了SiNx 薄膜。用X 射线荧光光谱、红外吸收光谱、红外反射光谱以及扫描电镜对薄膜的成分、结构、表面形貌和光学性质进行了初步研究。X 射线荧光分析表明SiNx 薄膜的组成为SiN0 .3 5。从红外透过光谱可见 ,氮参加了反应并生成Si N键 ,薄膜中有少量的Si h.和N h.。红外反射光谱表明SiN0 .3 5薄膜是非常好的窗口材料 ,在 8～ 13μm波段内具有很低的反射率 ,8～ 13μm波段外反射率高 ,适合制备辐射制冷体。

关键词：氮化硅薄膜辐射致冷微观结构光学性质

Ob.ERVATION ON DEFECTS IN POLYCRYSTALLINE SILICON Th.N FILMS

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Acta Metallurgica Sinica(English.Letters) 2005年第3期18卷 295-299页

作者： Y.F. h.1), h. shen2), L. wang3), Z.C. Liang3), Z.Y. Liu1) and L.S. w.n1) 1) College of Mech.nical Engineering, South.3} University of Tech.ology, Guan gzh.u 510640, china 2) Th. Sch.ol of Ph.sics and Engineering, Zh.ngsh.n University, guangzhou 510275 , china 3) guangzhou institute of energy conversion, Th. Ch.nese Academy of Sciences, G uangzh.u 510640, china College of Mech.nical Engineering South China University of Technology Guangzhou 510640China Th. Sch.ol of Ph.sics and Engineering Zhongshan University Guangzhou 510275China guangzhou institute of {2. conversion The Chinese Academy of Sciences Guangzhou 510640China

Polycrystalline silicon th.n films w.re prepared {2. RTCVD (rapid th.rmal ch.mica l vapor deposition) meth.d on several su{2.trates such.as SSP (silicon sh.et from pow.er) ri{2.on, poly-Si w.fer and mono-Si w.fer. Intra-granular defects such.as stacking faults, tw.ns and microstructure defects w.re investigated on th.n fil ms {2. scan electron microscopy (SEM) tech.ique.

关键词： poly-Si th.n film intra-granular defects surface cross-section

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生物质气化重整合成二甲醚

燃料化学学报 2004年第3期32卷 297-300页

作者：王铁军常杰祝京旭付严中国科学技术大学安徽合肥230026 中国科学院广州能源研究所广东广州510070 加拿大西安大略大学

以松木粉为原料,采用空气水蒸气气化制备了富氢气化气,通过添加甲烷重整富氢气化气,调整了合成气化学当量比,在2.0℃、4MPa、12.00h.1条件下,对生物质合成气一步法合成二甲醚进行了实验研究。结果表明:引入甲烷重整,活化了富氢气化气... 详细信息

以松木粉为原料,采用空气水蒸气气化制备了富氢气化气,通过添加甲烷重整富氢气化气,调整了合成气化学当量比,在2.0℃、4MPa、12.00h.1条件下,对生物质合成气一步法合成二甲醚进行了实验研究。结果表明:引入甲烷重整,活化了富氢气化气中过量的CO2.甲烷的最佳加入量为Ch. CO2.1,生物质碳转化率达到70%以上,尾气中二甲醚选择性达到69.6%。

关键词：生物质合成二甲醚

STCF conceptual design report (Volume 1): Ph.sics & detector

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Frontiers of ph.sics 2024年第1期19卷 1-154页

作者： M.Ach.sov X.C.Ai L.P.An R.Alib.rti Q.An X.Z.b.i Y.b.i O.b.kina A.b.rnyakov V.b.inov V.b.b.ovnikov D.b.drov A.b.gomyagkov A.b.ndar I.b.yko Z.h.b. F.M.Cai h.Cai J.J.Cao Q.h.Cao X.Cao Z.Cao Q.Ch.ng K.T.Ch.o D.Y.Ch.n h.Ch.n h.X.Ch.n J.F.Ch.n K.Ch.n L.L.Ch.n P.Ch.n S.L.Ch.n S.M.Ch.n S.Ch.n S.P.Ch.n w.Ch.n X.Ch.n X.F.Ch.n X.R.Ch.n Y.Ch.n Y.Q.Ch.n h.Y.Ch.ng J.Ch.ng S.Ch.ng T.G.Ch.ng J.P.Dai L.Y.Dai X.C.Dai D.Dedovich.A.Denig I.Denisenko J.M.Dias D.Z.Ding L.Y.Dong w.h.Dong V.Druzh.nin D.S.Du Y.J.Du Z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang Z.J.Fang G.Fedotovich.C.Q.Feng X.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong b.Gou w.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo Z.h.Guo A.Guskov K.L.h.n L.h.n M.h.n X.Q.h.o J.b.h. S.Q.h. X.G.h. Y.L.h. Z.b.h. Z.X.h.ng b.L.h.u T.J.h.u Y.R.h.u C.Y.h. h.M.h. K.h. R.J.h. w.h.h. X.h.h. Y.C.h. J.h.a G.S.h.ang J.S.h.ang M.h.ang Q.Y.h.ang w.Q.h.ang X.T.h.ang X.J.h.ang Y.b.h.ang Y.S.h.ang N.h.sken V.Ivanov Q.P.Ji J.J.Jia S.Jia Z.K.Jia h.b.Jiang J.Jiang S.Z.Jiang J.b.Jiao Z.Jiao h.J.Jing X.L.Kang X.S.Kang b.C.Ke M.Kenzie A.Kh.ukaz I.Koop E.Kravch.nko A.Kuzmin Y.Lei E.Levich.v C.h.Li C.Li D.Y.Li F.Li G.Li G.Li h.b.Li h.Li h.N.Li h.J.Li h.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.h.Li S.Li T.Li w.J.Li X.Li X.h.Li X.Q.Li X.h.Li Y.Li Y.Y.Li Z.J.Li h.Liang J.h.Liang Y.T.Liang G.R.Liao L.Z.Liao Y.Liao C.X.Lin D.X.Lin X.S.Lin b.J.Liu C.w.Liu D.Liu F.Liu G.M.Liu h.b.Liu J.Liu J.J.Liu J.b.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.b.Liu T.Liu X.Liu Y.w.Liu Y.Liu Y.L.Liu Z.Q.Liu Z.Y.Liu Z.w.Liu I.Logashenko Y.Long C.G.Lu J.X.Lu N.Lu Q.F.Lü Y.Lu Y.Lu Z.Lu P.Lukin F.J.Luo T.Luo X.F.Luo Y.h.Luo h.J.Lyu X.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko Z.X.Meng R.Mitch.ll A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakh.ov G.Pakh.ova X.Pan Y.Pan E.Passemar Y.P.Pei h.P.Peng L.Peng X.Y.Peng X.J.Peng K.Peters S.Pivovarov E.Pyata b.b.Qi Y.Q.Qi w.b.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin X.S.Qin T.L.Qiu J.Rademacker C.F.Redmer h.Y.Sang Anh.i University Hefei 230039China b.ih.ng University Beijing 100191China b.dker institute of Nuclear P{2.sics Novosibirsk 630090Russia CAS Key Lab.ratory of Th.oretical Ph.sics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Cavendish.Lab.ratory University of CambridgeJJ Thomson AveCambridge CB30HEUnited Kingdom Central china Normal University Wuhan 430079China Central South.University Changsha 410083China china University of Geosciences Wuhan 430074China china University of Mining and Tech.ology Xuzhou 221116China École Polytech.ique Fédérale de Lausanne(EPFL) LausanneSwitzerland Fudan University Shanghai 200433China Goeth. University Frankfurt D-60325 Frankfurt am MainGermany Guangxi Normal University Guilin 541004China Guangxi Uninversity Nanning 530004China h.ngzh.u {2. for Advanced Study UCASHangzhou 310024China h.b.i Normal University Shijiazhuang 050024China h.b.i University Baoding 071002China h.fei University of Tech.ology Hefei 230601China h.lmh.ltz {2. Mainz Staudinger Weg 18D-55099 MainzGermany h.nan Normal University Xinxiang 453007China h.nan University Kaifeng 475004China h.gh.{2. Ph.sics Center Chung-Ang UniversitySeoul 06974Korea h.gh.r Sch.ol of Economy 11 Pokrovsky b.lvar Moscow 109028Russia h.angsh.n University Huangshan 245000China h.b.i University of Automotive Tech.ology Shiyan 442002China h.nan Normal University Changsha 410081China h.nan University of Science and Tech.ology Xiangtan 411201China h.nan University Changsha 410082China Indiana University BloomingtonIndiana 47405USA Inner Mongolia University Hohhot 010021China institute of Advanced Science Facilities Shenzhen 518107China institute of h.gh.energy Ph.sics Chinese Academy of SciencesBeijing 100049China institute of Modern Ph.sics Chinese Academy of SciencesLanzhou 730000China institute of Ph.sics Academia SinicaTaipeiTaiwan 11529China institute of Th.oretical Ph.sics Chinese Academy of SciencesBeijing 100190China Jilin University Changch

Th. superτ-ch.rm facility(STCF)is an electron–positron collider proposed {2. th. Ch.nese particle ph.sics *** is designed to operate in a center-of-mass energy range from 2.to 7 GeV w.th.a peak luminosity of 0.5×10^(35) cm^(–2.·s^(–1) or *** STCF w.ll produce a data sample a{2.ut a factor of 100 larger th.n th.t of th. presentτ-ch.rm factory—th. {2.PCII,providing a unique platform for exploring th. asymmetry of matter-antimatter(ch.rge-parity violation),in-depth.studies of th. internal structure of h.drons and th. nature of non-pertur{2.tive strong interactions,as w.ll as search.ng for exotic h.drons and ph.sics {2.yond th. Standard *** STCF project in china is under development w.th.an extensive R&D *** document presents th. ph.sics opportunities at th. STCF,descri{2.s conceptual designs of th. STCF detector system,and discusses future plans for detector R&D and ph.sics case studies.

关键词： electron–positron collider tau-ch.rm region h.gh.luminosity STCF detector conceptual design

平板型太阳热水器板芯高温耐久性实验方法研究

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武汉大学学报（理学版） 2005年第S2期51卷 83-86页

作者：王巧沈辉舒杰汪保卫华南理工大学材料科学与工程学院广东广州510640 中山大学纳米技术中心广东广州510275 中国科学院广州能源研究所广东广州510640

为了研究平板型太阳热水器板芯表面的高温耐久性,结合国外的实验方法及国内的应用特点设计了本实验方法.该方法以板芯表面光学性能的衰减来推断系统的寿命,即在一定的高温实验条件下模拟加速衰减过程,以板芯表面光学性能衰减小于5%作为... 详细信息

为了研究平板型太阳热水器板芯表面的高温耐久性,结合国外的实验方法及国内的应用特点设计了本实验方法.该方法以板芯表面光学性能的衰减来推断系统的寿命,即在一定的高温实验条件下模拟加速衰减过程,以板芯表面光学性能衰减小于5%作为判断板芯合格标准.

关键词：板芯表面耐久性高温光学性能实验设计

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生物质燃气催化重整净化的特性研究

太阳能学报 2006年第7期27卷 666-670页

作者：崔小勤常杰王铁军张琦付严张兴华中国科学院广州能源研究所

通过改变生物质燃气重整过程中重整温度、反应时间、水蒸气的添加等参数,考察了国产烃类蒸汽转化催化剂Z405重整净化生物质燃气的性能及对合成气化学当量比的调变作用。结果表明:在Z405的作用下,生物质燃气中Ch.和C2.化率均高达95%以上... 详细信息

通过改变生物质燃气重整过程中重整温度、反应时间、水蒸气的添加等参数,考察了国产烃类蒸汽转化催化剂Z405重整净化生物质燃气的性能及对合成气化学当量比的调变作用。结果表明:在Z405的作用下,生物质燃气中Ch.和C2.化率均高达95%以上,合成气中Ch.和C2.含量分别低于0.500%和0.005%,h.与CO含量有显著增加,CO2.量有所减少。添加水蒸气后h./CO值较之无水蒸气的添加发生了显著变化,从0.70提高到1.15,气体低热值有所增大。提高重整温度对生物质合成气组分具有显著的调变作用,h.和CO含量增幅随温度升高而增加,Ch.与C2.分含量降低幅度也随温度升高而增加。但当重整温度超过780℃时,对合成气组分调整作用不明显。重整生物质燃气组分在60min内无明显改变,未检测到催化剂活性降低、失重及积炭。

关键词：烃类蒸汽转化催化剂生物质燃气重整反应

Amplitude analysis of th. decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)

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Ch.nese Ph.sics C 2024年第8期48卷 6-33页

作者： M.Ab.ikim M.N.Ach.sov P.Adlarson O.Afedulidis X.C.Ai R.Alib.rti A.Amoroso Q.An Y.b.i O.b.kina I.b.lossino Y.b.n h.-R.b.o V.b.tozskaya K.b.gzsuren N.b.rger M.b.rlow.ki M.b.rtani D.b.ttoni F.b.anch. E.b.anco A.b.rtone I.b.yko R.A.b.iere A.b.ueggemann h.Cai X.Cai A.Calcaterra G.F.Cao N.Cao S.A.Cetin J.F.Ch.ng w.L.Ch.ng G.R.Ch. G.Ch.lkov C.Ch.n C.h.Ch.n Ch.o Ch.n G.Ch.n h.S.Ch.n M.L.Ch.n S.J.Ch.n S.L.Ch.n S.M.Ch.n T.Ch.n X.R.Ch.n X.T.Ch.n Y.b.Ch.n Y.Q.Ch.n Z.J.Ch.n Z.Y.Ch.n S.K.Ch.i X.Ch. G.Cib.netto F.Cossio J.J.Cui h.L.Dai J.P.Dai A.Db.yssi R.E.de b.er D.Dedovich.C.Q.Deng Z.Y.Deng A.Denig I.Denysenko M.Destefanis F.De Mori b.Fang S.S.Fang w.X.Fang Y.Fang Y.Q.Fang R.Farinelli L.Fava F.Feldb.uer G.Felici C.Q.Feng J.h.Feng Y.T.Feng K.Fisch.r M.Fritsch.C.D.Fu J.L.Fu Y.w.Fu h.Gao Y.N.Gao Yang Gao S.Garb.lino I.Garzia P.T.Ge Z.w.Ge C.Geng E.M.Gersab.ck b.Ding X.X.Ding Y.Ding Y.Ding J.Dong L.Y.Dong M.Y.Dong X.Dong M.C.Du S.X.Du Z.h.Duan P.Egorov Y.h.Fan J.Fang JA.Gilman K.Goetzen L.Gong w.X.Gong w.Gradl S.Gramigna M.Greco M.h.Gu Y.T.Gu C.Y.Guan Z.L.Guan A.Q.Guo L.b.Guo M.J.Guo R.P.Guo Y.P.Guo A.Guskov J.Gutierrez K.L.h.n T.T.h.n X.Q.h.o F.A.h.rris K.K.h. K.L.h. F.h.h.insius C.h.h.inz Y.K.h.ng C.h.rold T.h.ltmann P.C.h.ng G.Y.h.u X.T.h.u Y.R.h.u Z.L.h.u b.Y.h. h.M.h. J.F.h. T.h. Y.h. G.S.h.ang K.X.h.ang L.Q.h.ang X.T.h.ang Y.P.h.ang T.h.ssain F.h."olzken N.h."usken N.in der w.esch. M.Irsh.d J.Jackson S.Janch.v J.h.Jeong Q.Ji Q.P.Ji w.Ji X.b.Ji X.L.Ji Y.Y.Ji X.Q.Jia Z.K.Jia D.Jiang h.b.Jiang P.C.Jiang S.S.Jiang T.J.Jiang X.S.Jiang Y.Jiang J.b.Jiao J.K.Jiao Z.Jiao S.Jin Y.Jin M.Q.Jing X.M.Jing T.Joh.nsson S.Kab.na N.Kalantar-Nayestanaki X.L.Kang X.S.Kang M.Kavatsyuk b.C.Ke V.Kh.ch.tryan A.Kh.ukaz R.Kiuch. O.b.Kolcu b.Kopf M.Kuessner X.Kui A.Kupsc w.K\"uh. J.J.Lane P.Larin L.Lavezzi T.T.Lei Z.h.Lei h.Leith.ff M.Lellmann T.Lenz C.Li C.Li C.h.Li Ch.ng Li D.M.Li F.Li G.Li h.Li h.b.Li h.J.Li h.N.Li h.i Li J.R.Li J.S.Li K.Li L.J.Li L.K.Li Lei Li M.h.Li P.R.Li Q.M.Li Q.X.Li R.Li S.X.Li T.Li w.D.Li w.G.Li X.Li X.h.Li X.L.Li X.Y.Li Y institute of h.gh.energy Ph.sics Chinese Academy of SciencesBeijing 100049China b.ih.ng University Beijing 100191China b.ch.m Ruh.-University D-44780 BochumGermany b.dker institute of Nuclear P{2.sics Sb.RAS(b.NP) Novosibirsk 630090Russia Carnegie Mellon University PittsburghPennsylvania 15213USA Central china Normal University Wuhan 430079China Central South.University Changsha 410083China china Center of Advanced Science and Tech.ology Beijing 100190China china University of Geosciences Wuhan 430074China Ch.ng-Ang University Seoul06974Republic of Korea COMSATS University Islamab.d Lahore CampusDefence RoadOff Raiwind Road54000 LahorePakistan Fudan University Shanghai 200433China GSI h.lmh.ltzcentre for h.avy Ion Research.Gmb. D-64291 DarmstadtGermany Guangxi Normal University Guilin 541004China Guangxi University Nanning 530004China h.ngzh.u Normal University Hangzhou 310036China h.b.i University Baoding 071002China h.lmh.ltz {2. Mainz Staudinger Weg 18D-55099 MainzGermany h.nan Normal University Xinxiang 453007China h.nan University Kaifeng 475004China h.nan University of Science and Tech.ology Luoyang 471003China h.nan University of Tech.ology Zhengzhou 450001China h.angsh.n College Huangshan 245000China h.nan Normal University Changsha 410081China h.nan University Changsha 410082China Indian institute of Tech.ology Madras Chennai 600036India Indiana University BloomingtonIndiana 47405USA INFN Lab.ratori Nazionali di Frascati INFN Laboratori Nazionali di FrascatiI-00044FrascatiItaly INFN Lab.ratori Nazionali di Frascati INFN Sezione di PerugiaI-06100PerugiaItaly INFN Lab.ratori Nazionali di Frascati University of PerugiaI-06100PerugiaItaly INFN Sezione di Ferrara INFN Sezione di FerraraI-44122FerraraItaly INFN Sezione di Ferrara University of FerraraI-44122FerraraItaly Inner Mongolia University Hohhot 010021China institute of Modern Ph.sics Lanzhou 730000China institute of Ph.sics and Tech.ology Peace Avenue 54BUlaanbaatar 13330Mongolia Instituto de A

Using e^(+)e^(−)annih.lation data corresponding to an integrated luminosity of 2.93 fb.(−1)taken at th. center-of-mass energy√s=3.773 GeV w.th.th. b.SIII detector,a joint amplitude analysis is performed on th. decays D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η).Th. fit fractions of individual components are ob.ained,and large interferences among th. dominant components of th. decays D^(0)→a_(1)(12.0)π,D^(0)→π(1300)π,D^(0)→ρ(770)ρ(770),and D^(0)→2.ππ)_(S)are ob.erved in b.th.*** th. ob.ained amplitude model,th. CP-even fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are determined to b.(75.2.1.1_(stat).±1.5_(syst.))%and(68.9±1.5_(stat).±2.4_(syst.))%,*** b.anch.ng fractions of D^(0)→π^(+)π^(−)π^(+)π^(−)and D^(0)→π^(+)π^(−)π^(0)π^(0)(non-η)are measured to b.(0.688±0.010_(stat.)±0.010_(syst.))%and(0.951±0.02._(stat.)±0.02._(syst.))%,*** amplitude analysis provides an important model for th. b.nning strategy in measuring th. strong ph.se parameters of D^(0)→4πw.en used to determine th. CKM angleγ(ϕ_(3))via th. b.(−)→DK^(−)decay.

关键词： b.SIII D^(0)meson decays amplitude analysis CP-even fraction