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Biaxial versus uniaxial strain tuning of single-layer MoS_(2)

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Nano Materials Science 2022年第1期4卷 44-51页

作者： Felix Carrascoso Riccardo Frisenda andres castellanos-gomez Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)28049Madrid Spain

Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of twod imensional semiconductors like molybdenum disulfide(MoS_(2)).Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS_(2),a direct experimental verification is still missing in the *** we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer *** used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS_(2)flakes finding a redshift of the excitonic features at a rate between-40 meV/%and-110 meV/%of biaxial *** also directly compare the effect of biaxi al and uniaxial strain on the same single-layer MoS_(2)finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.

关键词： finding layer gauge

Strain engineering in single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2)and WSe_(2)

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Nano Research 2021年第6期14卷 1698-1703页

作者： Felix Carrascoso Hao Li Riccardo Frisenda andres castellanos-gomez Materials Science Factory Instituto de Ciencia de Materiales de MadridConsejo Superior de Investigaciones Cientificas28049MadridSpain

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high *** then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2) and WSe_(2).Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS_(2) flakes.

关键词： two-dimensional(2D)materials transition metal dichalcogenides strain engineering band gap differential reflectance

Folded MoS2 layers with reduced interlayer coupling

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Nano Research 2014年第4期7卷 572-578页

作者： andres castellanos-gomez Herre S. J. van der Zant Gary A. Steele Kavli Institute of Nanoscience Delft University of Technology 2528 CJ Delft The Netherlands

We study molybdenum disulfide （MoS2） structures generated by folding single-layer and bilayer MoS2 flakes. We find that this modified layer stacking leads to a decrease in the interlayer coupling and an enhancement of the photoluminescence emission yield. We additionally find that folded single-layer MoS2 structures show a contribution to photoluminescence spectra of both neutral and charged excitons, which is a characteristic feature of single-layer MoS2 that has not been observed in multilayer MoS2. The results presented here open the door to fabrication of multilayered MoS2 samples with high optical absorption while maintaining the advantageous enhanced photoluminescence emission of single-layer MoS2 by controllably twisting the MoS2 layers.

关键词： molybdenum disulfide(MoS2) folded MoS2 twisted MoS2 interlayer coupling Raman spectroscopy photoluminescence

Solvent-free fabrication of broadband WS2 photodetectors on paper

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Opto-Electronic Advances 2023年第3期6卷 1-11页

作者： Wenliang Zhang Onur Çakıroğlu Abdullah Al-Enizi Ayman Nafady Xuetao Gan Xiaohua Ma Sruthi Kuriakose Yong Xie andres castellanos-gomez Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)Madrid E-28049Spain Department of Chemistry College of ScienceKing Saud UniversityRiyadh 11451Saudi Arabia Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China

Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible ***,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers *** as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) ***,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential *** present work could promote the development of cost-effective disposable photodetection devices.

关键词： paper electronics photodetector van der Waals materials solvent-free deposition tungsten disulfide

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

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Light(Science & Applications) 2022年第5期11卷 901-910页

作者： Ruijuan Tian Xuetao Gan Chen Li Xiaoqing Chen Siqi Hu Linpeng Gu Dries Van Thourhout andres castellanos-gomez Zhipei Sun Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University710129 Xi’anChina Photonics Research Group and Center for Nano and Biophotonics Ghent UniversityB-9000 GentBelgium Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)E-28049 MadridSpain Department of Electronics and Nanoengineering and QTF Centre of Excellence Aalto UniversityFI-02150 EspooFinland

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free ***,the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metalsemiconductor-metal,suffering from high dark currents and low responsivities at high operation ***,we report a van der Waals PN heterojunction photodetector,composed of p-type black phosphorous and n-type molybdenum telluride,integrated on a silicon nitride *** built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the *** a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous,the dark current is lower than 7 nA,which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus *** intrinsic responsivity up to 577 mA W^(−1) is ***,the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection,enabling an increased responsivity of 709 mA W^(−1).Besides,the heterojunction photodetector exhibits a response bandwidth of~1.0 GHz and a uniform photodetection over a wide spectral range,as experimentally measured from 1500 to 1630 *** demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current,high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon,lithium niobate,polymer,etc.

关键词： heterojunction responsivity waveguide

Laser trimming for lithography-free fabrications of MoS_(2)devices

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Nano Research 2023年第4期16卷 5042-5046页

作者： Yong Xie OnurÇakıroğlu Wenshuai Hu Kexin He Sergio Puebla Thomas Pucher Qinghua Zhao Xiaohua Ma Carmen Munuera andres castellanos-gomez Key Laboratory of Wide Band-Gap Semiconductor Technology School of Advanced Materials and NanotechnologyXidian UniversityXi’an 710071China Materials Science Factory Instituto de Ciencia de Materiales de MadridConsejo Superior de Investigaciones Científicas28049 MadridSpain

Single-layer MoS_(2)produced by mechanical exfoliation is usually connected to thicker and multilayer *** show a facile laser trimming method to insulate single-layer MoS_(2)regions from thicker *** demonstrate,through electrical characterization,that the laser trimming method can be used to pattern single-layer MoS_(2)channels with regular geometry and electrically disconnected from the thicker *** photocurrent microscope further confirms that in the as-deposited flake(connected to a multilayer area)most of the photocurrent is being generated in the thicker flake *** laser trimming,scanning photocurrent microscopy shows how only the single-layer MoS_(2)region contributes to the photocurrent *** presented method is a direct-write and lithography-free(no need of resist or wet chemicals)alternative to reactive ion etching process to pattern the flakes that can be easily adopted by many research groups fabricating devices with MoS_(2) and similar twodimensional materials.

关键词： 2D materials transition metal dichalcogenides laser trimming differential reflectance

Thickness determination of MoS2,MoSe2,WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials

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Nano Research 2019年第7期12卷 1691-1695页

作者： Najme S. Taghavi Patricia Gant Peng Huang Iris Niehues Robert Schmidt Steffen Michaelis de Vasconcellos Rudolf Bratschitsch Mar Garcia-Hernandez Riccardo Frisenda andres castellanos-gomez Materials Science Factory Instituto de Ciencia de Materiales de Madrid (ICMM)Consejo Superior de Investigaciones Cientificas (CSIC)Sor Juana Ines de la Cruz 328049 MadridSpain Faculty of Physics Khaje Nasir Toosi University of Technology (KNTU)Tehran 19697 64499Iran State Key Laboratory of Tribology Tsinghua UniversityBeijing 100084China Institute of Physics and Center for Nanotechnology University of Munster48149 MunsterGermany

Here,we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps,used for the deterministic placement of two-dimensional materials,by analyzing the red,green and blue channels of transmission-mode optical microscopy images of the *** particular,the blue channel transmittance shows a large and monotonic thickness dependence,making it a very convenient probe of the flake *** method proves to be robust given the small flake-to-flake variation and the insensitivity to doping changes of *** also tested the method for MoSe2,WS2 and *** results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy.

关键词： transition metal dichalcogenides optical identification transparent substrate trasmittance

Scalable and low-cost fabrication of flexible WS_(2) photodetectors on polycarbonate

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npj Flexible Electronics 2022年第1期6卷 226-234页

作者： Jorge Quereda Sruthi Kuriakose Carmen Munuera Federico J.Mompean Abdullah M.Al-Enizi Ayman Nafady Enrique Diez Riccardo Frisenda andres castellanos-gomez GISC Departamento de Física de MaterialesUniversidad Complutense de MadridMadridSpain Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMMCSIC)28049 MadridSpain Department of Chemistry College of ScienceKing Saud UniversityRiyadh 11451Saudi Arabia Nanotechnology Group USAL–NanolabUniversidad de Salamanca37008 SalamancaSpain

We present a low-cost and easy-to-implement technique to fabricate large-area WS_(2) photodetector devices onto transparent and flexible polycarbonate *** method relies on the deposition of large-area(in the cm scale)thin films(~30 nm thick)of WS_(2) by a recently introduced abrasion-induced *** electrical contacts are then deposited by thermal evaporation through a shadow *** photodetectors present well-balanced performances with an good trade-off between responsivity(up to 144 mA/W at a source-drain voltage of 10 V and illumination power of 1μW)and response time(down to~70µs)and a detectivity value of 10^(8) *** found that the devices perform very reversibly upon several illumination and straining cycles and we found a moderate device-to-device variation.

关键词： drain illumination cost

Band Gap Opening of Graphene by Noncovalent π-π Interaction with Porphyrins

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Graphene 2013年第3期2卷 102-108页

作者： Arramel andres castellanos-gomez Bart Jan van Wees Physics of Nanodevices Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands Physics of Nanodevices Zernike Institute for Advanced Materials University of Groningen Groningen The Netherlands Kavli Institute of Nanoscience Delft University of Technology Delft The Netherlands

Graphene has been recognized as a promising 2D material with many new properties. However, pristine graphene is gapless which hinders its direct application towards graphene-based semiconducting devices. Recently, various ways have been proposed to overcome this problem. In this study, we report a robust method to open a gap in graphene via noncovalent functionalization with porphyrin molecules. Two type of porphyrins, namely, iron protoporphyrin (FePP) and zinc protoporphryin (ZnPP) were independently physisorbed on graphene grown on nickel by chemical vapour deposition (CVD) resulting in a bandgap opening in graphene. Using a statistical analysis of scanning tunneling spectroscopy (STS) measurements, we demonstrated that the magnitude of the band gap depends on the type of deposited porphyrin *** π-π stacking of FePP on graphene yielded a considerably larger band gap value (0.45 eV) than physisorbed ZnPP (0.23 eV). We proposed that the origin of different band gap value is governed due to the metallic character of the respective porphyrin.

关键词： Band Gap Graphene Scanning Tunneling Spectroscopy Porphyrins π-π Stacking