Strain engineering in single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2)and WSe_(2)

作     者：Felix Carrascoso Hao Li Riccardo Frisenda Andres Castellanos-Gomez Felix Carrascoso;Hao Li;Riccardo Frisenda;Andres Castellanos-Gomez

作者机构：Materials Science FactoryInstituto de Ciencia de Materiales de MadridConsejo Superior de Investigaciones Cientificas28049MadridSpain 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第6期

页      面：1698-1703页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：This project has received funding from the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation programme(grant agreement no 755655,ERC-StG 2017 project 2D-TOPSENSE) R.F.acknowledges the support from the Spanish Ministry of Economy,Industry and Competitiveness through a Juan de la Cierva-formación fellowship 2017 FJCI-2017-32919.H.L.acknowledges the grant from China Scholarship Council(CSC)under No.201907040070 

主　　题：two-dimensional(2D)materials transition metal dichalcogenides strain engineering band gap differential reflectance 

摘      要：Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high *** then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2) and WSe_(2).Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS_(2) flakes.