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Science china(Information Sciences) 2011年第2期54卷 396-406页

作者： CHEN KenLe & ZHANG JinWen National Key laboratory of Micro/nano {2. Technology, institute of microelectronics, Peking University, beijing 100871, china National Key laboratory of Micro/nano {2. Technology Institute of Microelectronics Peking University Beijing China

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the inffuence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

关键词： RF MEMS switch insertion loss fringing capacitance dielectric layer

An overview of resistive random access memory devices

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Science Bulletin 2011年第Z2期 3072-3078页

作者： LI YingTao 1,2., LONG ShiBing 2., LIU Qi 2., Lü HangBing 2., LIU Su 1 & LIU Ming 2. 1 School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, china 2.laboratory of nano-fabrication and novel device integration,{2., Chinese Academy of Sciences, beijing 10002., china

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.

关键词： resistive random access memory resistive switching performance parameters

Approaches for improving the performance of filament-type resistive switching memory

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Science Bulletin 2011年第Z1期 461-464页

作者： LIAN WenTai1,2.LONG ShiBing1,Lü HangBing1,LIU Qi1,2.LI YingTao1,ZHANG Sen1,WANG Yan1,HUO ZongLiang1,DAI YueHua2.CHEN JunNing2.& LIU Ming1 1 laboratory of nano-{2. and novel device integration,institute of microelectronics,Chinese Academy of Sciences,beijing 10002.,china 2.College of Electronics and Technology,Anhui University,Hefei 2.0039,china

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.

关键词： non-volatile memory resistive random access memory (RRAM) conductive filament (CF)

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阻变式存储器存储机理

物理 2008年第12期37卷 870-874页

作者：王永管伟华龙世兵刘明谢常青中国科学院微电子研究所纳米加工与新器件集成技术实验室北京100029

阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32.m节点及以下取代现有主流Flash存储器的潜力,成为目前新型存... 详细信息

阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32.m节点及以下取代现有主流Flash存储器的潜力,成为目前新型存储器的一个重要研究方向.但阻变式存储器的电阴转变机理不明确,制约它的进一步研发与应用.文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳,总结了目前对阻变式存储器存储机理的理论模型.

关键词：非挥发性阻变式存储器(RRAM) 综述空间电荷限制电流(SCLC) 细丝

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Advances in Si-based nanotechnology and quantum devices

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Advances in Si-based nanotechnology and quantum devices