检索结果-南通市图书馆

Comparison of the RF MEMS switches with dielectric layers on the bridge’s lower surface and on the transmission line

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science china(Information sciences) 2011年第2期54卷 396-406页

作者： CHEN KenLe & ZHANG JinWen National Key laboratory of Micro/nano fabrication Technology, institute of microelectronics, Peking University, beijing 100871, china National Key laboratory of Micro/nano fabrication Technology Institute of Microelectronics Peking University Beijing China

Previously, we proposed that the dielectric layer of RF MEMS switch can be fabricated either on the transmission line, as traditional switches, or on the lower surface of the bridge. This paper presents a detailed comparison of the RF MEMS switches with different positions of dielectric layer. Through theoretically analyzing the physical model of fringing capacitance, it is revealed that different positions of dielectric layer can result in different switch capacitances. Therefore, the change of dielectric-layer position can reduce the switch capacitance and insertion loss when the bridge is much wider than t-line. The theoretical analysis is demonstrated by Maxwell 3D and HFSS simulation, showing that the insertion loss is reduced by around 13% when the bridge width is three times of transmission line width. Further, the inffuence of switch’s structural parameters, such as dielectric material and dimensions of dielectric layer, on the differences between these two kinds of switches is discussed. To achieve high integration together with low-loss and low-actuation-voltage design, the novel switch with dielectric layer on bridge’s lower surface can be expected to have broad applications in the future.

关键词： RF MEMS switch insertion loss fringing capacitance dielectric layer

Approaches for improving the performance of filament-type resistive switching memory

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science Bulletin 2011年第Z1期 461-464页

作者： LIAN WenTai1,2,LONG ShiBing1,Lü HangBing1,LIU Qi1,2,LI YingTao1,ZHANG Sen1,WANG Yan1,HUO ZongLiang1,DAI YueHua2,CHEN JunNing2 & LIU Ming1 1 laboratory of nano-fabrication and novel device integration,institute of microelectronics,chinese academy of sciences,beijing 100029,china 2 College of Electronics and Technology,Anhui University,Hefei 230039,china

Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.

关键词： non-volatile memory resistive random access memory (RRAM) conductive filament (CF)

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

阻变式存储器存储机理

物理 2008年第12期37卷 870-874页

作者：王永管伟华龙世兵刘明谢常青中国科学院微电子研究所纳米加工与新器件集成技术实验室北京100029

阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32nm节点及以下取代现有主流Flash存储器的潜力,成为目前新型存... 详细信息

阻变式存储器(resistive random access memory,RRAM)是以材料的电阻在外加电场作用下可在高阻态和低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器.它具有在32nm节点及以下取代现有主流Flash存储器的潜力,成为目前新型存储器的一个重要研究方向.但阻变式存储器的电阴转变机理不明确,制约它的进一步研发与应用.文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳,总结了目前对阻变式存储器存储机理的理论模型.

关键词：非挥发性阻变式存储器(RRAM) 综述空间电荷限制电流(SCLC) 细丝

维普期刊数据库

Advances in Si-based nanotechnology and quantum devices

在线全文

学校读者我要写书评

暂无评论

Advances in Si-based nanotechnology and quantum devices

Analysis of tail bits generation of multilevel storage in resistive switching memory

2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Peiyi Chen~* Ning Deng Lei Zhang institute of microelectronics Tsinghua University beijing 100084 china

＜正＞The preparation technologies of nano-structures were reviewed in this paper,included nano-fabrication and self-assembled growth *** the down sizing of present silicon IC technology,validity of Moore’s law has become seemingly limited,because the feature size of Si ULSI has reached nanometer *** is unavoidable that quantum effects play very important role in the *** industry faces the severe challenge and ***,it is undoubted that the novel materials,for example, carbon nanotubes,will provide some solution for future nano-scaling architectures and devices,such as CNT-FET, but it is still a question whether CNT-based technology will actually contribute to the existing CMOS technology or it is totally new device architecture from CMOS *** Si-based quantum devices, included electronic and optoelectronic devices,are presented in this paper,they are based on quantum effects and fabricated by the processing compatible with Si IC technology.

关键词：

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

chinese Physics B 2018年第11期27卷 626-629页

作者：刘璟许晓欣陈传兵龚天成余兆安罗庆袁鹏董大年刘琦龙世兵吕杭炳刘明 School of microelectronics University of Chinese Academy of Sciences Beijing 100049 China laboratory of nano-fabrication and novel devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.

关键词： resistive random-access memory (RRAM) multilevel cell tail bits

维普期刊数据库