Sn doped ZnO thin films as high resistivity window layer for Cu(In,Ga)Se2 solar cells

作     者：LI Bo-yan LIU Fang-fang LIN Lie 李博研;刘芳芳;林列

作者机构：Institute of Modern OpticsCollege of Electronic Information and Optical EngineeringNankai UniversityTianjin 300350China Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Nankai UniversityTianjin 300350China Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinTianjin 300350China 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2020年第16卷第6期

页      面：451-454页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：CIGS resistivity layer 

摘      要：For high efficiency Cu(In,Ga)Se2(CIGS) solar cell, the high-resistivity layer with high optical transmittance has to be adopted between the buffer layer and the high-conductivity window layer. In this paper, we propose Sn doped ZnO(ZTO) film, instead of the traditional intrinsic ZnO(i-ZnO) film, as an alternative n-type high-resistivity window layer for CIGS solar cell. In this experiment, both ZTO and i-ZnO films are strong(002) oriented, and the surface morphologies of the two films are almost the same. The statistical roughnesses of i-ZnO film and ZTO film are 0.58 nm and 0.63 nm, respectively. However, the optical transmittance of ZTO film is higher than that of i-ZnO film with the same thickness. The efficiency of ZTO based CIGS cell was 14.24%, which is almost the same as the efficiency of i-ZnO based CIGS cell. These results fully suggest that it is very feasible to replace i-ZnO with ZTO as the high resistant window layer.