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Effect of Mo Se2 on the performance of cigs solar cells

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Optoelectronics Letters 2019年第6期15卷 428-434页

作者： SUN Hao-yu LI Peng-hai XUE Yu-ming QIAO Zai-xiang LIU Sai College of Electrical and Electronic Engineering Tianjin University of TechnologyTianjin 300384China College of Physics and Materials Science Tianjin Normal UniversityTianjin 300387China

A Cu In1-xGaxSe2(cigs) thin film solar cell model with Mo Se2 transition layer was established, using SCAPS-1 D software. The influence of Mo Se2 interface layer formed between absorption layer cigs and the back contact Mo on the solar cell performance was investigated. By changing the doping concentration, thickness and bandgap of Mo Se2 layer, it is found that the Mo Se2 and the variation of parameters have a significant effect on the electrical characteristics and photovoltaic parameters of cigs thin film solar cells. Based on the energy band, the interfaces of Mo/Mo Se2 and Mo Se2/cigs are analyzed. It is considered that Mo/Mo Se2 is a Schottky contact, Mo Se2/cigs is an ohmic contact. When suitable parameters of Mo Se2 layer are formed into the interface, it will provide a new path for designing cigs solar cells with thinner absorption layer.

关键词： cigs performance interface

Tuning the band gap of the cigs solar buffer layer Cd_(1-x)Zn_(x)S(x=0—1) to achieve high efficiency

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Optoelectronics Letters 2024年第2期20卷 100-106页

作者： TAN Zhiyuan XUE Yuming DAI Hongli WANG Luoxin HU Xiaofeng BAI Xin Institute of New Energy Intelligence Equipment School of Integrated Circuit Science and EngineeringTianjin University of TechnologyTianjin 300384China

To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this *** effect of ZnSO_(4) precursor concentration on the surface morphology,optical properties,and morphological structure of the Cd_(1-x)Zn_(x)S films was *** study the impact of zinc doping content on the performance metrics of Cu(In_(1-x)Ga_(x))Se_(2)(cigs)cells in the experimental group and to improve the buffer layer thickness,simulations were run using one-dimensional solar cell capacitance simulator(SCAPS-1D) software.

关键词： cigs (x) layer

A review on barrier layers used in flexible stainless-steel based cigs photovoltaic devices

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npj Flexible Electronics 2023年第1期7卷 187-198页

作者： Sarallah Hamtaei Guy Brammertz Jef Poortmans Bart Vermang imec imo-imomecThor Park 83203600 GenkBelgium Hasselt University(partner in Solliance) imo-imomecMartelarenlaan 423500 HasseltBelgium EnergyVille imo-imomecThor Park 83203600 GenkBelgium KU Leuven Department of Electrical EngineeringKasteelpark Arenberg 103001 HeverleeBelgium

Two primary engineering challenges are en route to fabricating high-performance flexible stainless-steel based Cu(In,Ga)(S,Se)_(2)solar cells;Growing absorbers without contamination from the substrate,and providing alkali dopants to the *** former is chiefly addressed by introducing a barrier layer,and the latter by post-deposition treatment or including dopant-containing layers in the *** we organize these solutions and different approaches in an accessible ***,reports on interaction between contamination and alkali elements are discussed,as is the impact of barrier layer properties on the interconnect ***,we make recommendations to consolidate the multitude of sometimes inharmonious solutions.

关键词： cigs barrier absorber

Effects of Sb-doping on the grain growth of cigs thin films fabricated by electrodeposition

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Optoelectronics Letters 2022年第9期18卷 530-534页

作者： SUN Ding ZHANG Yuhong WANG Lingqun ZHANG Li School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Key Laboratory of Photoelectronic Thin Film Devices and Technology Institute of Photo Electronics Thin Film Devices and TechnologyNankai UniversityTianjin 300071China

Cu(In Ga)Se2(cigs) solar cells become one of the most important thin film photovoltaic devices thus far. The doping of Sb has improved the grain size of cigs thin film and therefore led to the enhancement of solar cell efficiency. Various approaches have been used for the Sb doping. Not many reports of electrodeposition of In, Ga and Sb alloy have been reported. In this work, the Sb thin film was coated over Cu film surface prior to the In and Ga deposition in order to form a Cu/Sb/In/Ga metal precursor. After selenization, the Sb doped cigs film was prepared. The structure and morphology of Sb doped cigs films were investigated compared with the undoped cigs reference samples. A modified selenization method was proposed, which improved the grain size. Finally, the conversion efficiency of Sb doped cigs based solar cells has been improved by 1.02%.

关键词： cigs doping film

Structure and properties of cigs films based on one-stage RF-sputtering process at low substrate temperature

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Journal of Modern Transportation 2014年第1期22卷 37-44页

作者： Yong Yan Shasha Li Yufeng Ou Yaxin Ji Chuanpeng Yan Lian Liu Zhou Yu Yong Zhao Superconductivity and New Energy R&D Center (SNERDC) School of Electrical EngineeringKey Laboratory of AdvancedTechnology of MaterialsMinistry of Education of ChinaSouthwest Jiaotong University School of Materials Science and Engineering University of New South Wales

Currently, Nanjing South Railway Stationplanning to implement slate roof renovation is integratingsolar cell modules into traditional roof materials to generateclean energy. Copper–indium–gallium diselenide（CuIn1-xGaxSe2, cigs） is one of the most promisingmaterials for thin film solar cells. Cu（In1-xGax）Se2 filmswere deposited by a one-step radio frequency magnetronsputtering process at low substrate temperature. X-raydiffraction, Raman, scanning electron microscopy, energydispersiveX-ray spectroscopy, and electrical and opticalmeasurements were carried out to investigate the depositedfilms. The results reveal that a temperature of 320 C iscritical for near-stoichiometric cigs films with uniformsurface morphology. Cu-rich phase particulates are foundat less than this temperature. The sample deposited at380 C gives well-crystalline single-phase cigs ***, the electrical and optical performances of theabsorber layer are improved significantly with theincreasing substrate temperature.

关键词： cigs Low-temperature Electrical andoptical propertie

Lateral bipolar photoresistance effect in the cigs heterojunction and its application in position sensitive detector and memory device

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Science Bulletin 2020年第6期65卷 477-485,M0004页

作者： Jihong Liu Zicai Zhang Shuang Qiao Guangsheng Fu Shufang Wang Caofeng Pan Hebei Key Laboratory of Optic-Electronic Information and Materials College of Physics Science and TechnologyHebei UniversityBaoding 071002China Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 100083China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China

Cu(In,Ga)Se2(cigs) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance *** lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response(~330 to ~1150 nm) and excellent bipolar photoresistance performances(position sensitivity of ~63.26 X/mm and nonlinearity cigs heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 lm. These results can be well explained by considering the diffusion and the drift model of carriers in the cigs multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.

关键词： cigs heterostructure Lateral photoresistance Photoresponse Position sensitive detector

金属预置层后硒化法制备cigs薄膜的研究进展

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稀有金属材料与工程 2014年第2期43卷 506-512页

作者：王影周爱军戴新义冯利东徐晓辉杜敬芳李晶泽电子科技大学电子薄膜与集成器件国家重点实验室四川成都610054 浙江大学硅材料国家重点实验室浙江杭州310027

系统综述了国内外采用金属预置层后硒化法制备Cu(In,Ga)Se2(cigs)薄膜的研究进展,重点从预置层制备过程中靶材的选择、叠层方式以及后硒化过程中硒源种类和硒化方式的选择等几个方面对各种工艺的优点、存在的问题和可能的解决方案进行讨... 详细信息

系统综述了国内外采用金属预置层后硒化法制备Cu(In,Ga)Se2(cigs)薄膜的研究进展,重点从预置层制备过程中靶材的选择、叠层方式以及后硒化过程中硒源种类和硒化方式的选择等几个方面对各种工艺的优点、存在的问题和可能的解决方案进行讨论,并对金属预置层后硒化法的发展前景和趋势进行了展望。

关键词：金属预置层硒化 cigs 薄膜太阳电池光吸收层

溅射后硒化法制备的cigs薄膜中Ga元素扩散研究

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物理学报 2014年第11期63卷 407-412页

作者：毛启楠张晓勇李学耕贺劲鑫于平荣王东北京大学工学院北京100871 普尼太阳能(杭州)有限公司杭州310051

溅射后硒化制备Cu(In,Ga)Se2吸收层工艺过程中,Ga元素在吸收层底部富集现象是较为普遍的.本文从预制层工艺和硒化工艺两个方面研究了Ga元素在Cu(In,Ga)Se2吸收层中扩散的影响因素.结果表明,预制层中的Cu/(In+Ga)和硒化温度对Ga元素扩散... 详细信息

溅射后硒化制备Cu(In,Ga)Se2吸收层工艺过程中,Ga元素在吸收层底部富集现象是较为普遍的.本文从预制层工艺和硒化工艺两个方面研究了Ga元素在Cu(In,Ga)Se2吸收层中扩散的影响因素.结果表明,预制层中的Cu/(In+Ga)和硒化温度对Ga元素扩散的影响较为显著,而预制层中的Ga/(In+Ga)对Ga元素扩散的影响较小,Ga元素的扩散系数制约了其在Cu(In,Ga)Se2吸收层表面的含量.通过工艺优化提高吸收层表面的Ga含量,制备获得了光电转换效率为12.42%的Cu(In,Ga)Se2薄膜太阳能电池.

关键词： cigs Ga扩散硒化太阳能电池

沉积预制层衬底温度对cigs薄膜结构特性的影响

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光电子．激光 2013年第10期24卷 1936-1941页

作者：郭伟薛玉明张晓峰冯少君张连连孙云河北建筑工程学院电气系河北张家口075000 天津理工大学电子信息工程学院薄膜电子与通信器件重点实验室天津300384 南开大学光电子薄膜器件与技术研究所天津300071

采用三步共蒸发工艺在玻璃衬底上制备cigs薄膜,研究沉积预制层的衬底温度对cigs薄膜结构特性的影响。薄膜的厚度、组份、晶相结构、表观形貌和电学特性分别由台阶仪、X射线荧光光谱(XRF)、X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)... 详细信息

采用三步共蒸发工艺在玻璃衬底上制备cigs薄膜,研究沉积预制层的衬底温度对cigs薄膜结构特性的影响。薄膜的厚度、组份、晶相结构、表观形貌和电学特性分别由台阶仪、X射线荧光光谱(XRF)、X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和霍耳效应测量仪来表征。沉积预制层的衬底温度较低(如300℃和360℃)时,预制层中Ga含量较低,容易形成In2Se3相;而衬底温度较高(如400℃)时,预制层中Ga含量较高,容易形成(In,Ga)2Se3相;原因是Ga2Se3的形成焓(-462.4kJ/mol)比In2Se3的(-360kJ/mol)低,没有In2Se3稳定;In2Se3相比Ga2Se3相更容易稳定存在,尤其是在低温下;当温度较高时,Ga2Se3相也容易存在,与In2Se3一起形成(In,Ga)2Se3固溶体。而且,衬底温度较高(如400℃)时,沉积的cigs薄膜中的Ga含量比其它两种衬底温度下沉积的薄膜都高,薄膜粗糙度较小,迁移率和载流子浓度都比较大,电阻率较小。

关键词： cigs 三步共蒸发预制层衬底温度结构特性