A review on performance comparison of advanced MOSFET structures below 45 nm technology node

作     者：Namrata Mendiratta Suman Lata Tripathi Namrata Mendiratta;Suman Lata Tripathi

作者机构：School of Electronics and Electrical EngineeringLovely Professional UniversityPhagwaraPunjabIndia 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2020年第41卷第6期

页      面：19-28页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

主　　题：MOSFET junctionless RF biosensor DIBL double gate 

摘      要：CMOS technology is one of the most frequently used technologies in the semiconductor industry as it can be successfully integrated with *** two years the number of MOS transistors doubles because the size of the MOSFET is *** the size of the MOSFET reduces the size of the channel length which causes short channel effects and it increases the leakage *** reduce the short channel effects new designs and technologies are *** gate MOSFET design has shown improvement in performance as amplifiers over a single ***-based MOSFET design can be used in a harsh *** has been used in various applications such as in detecting *** increase in number of gates increases the current drive capability of *** MOSFET is an example of a quadruple gate around the four sides of channel that increases gate control over the channel *** also increases effective channel width that improves drain current and reduces leakage current keeping short channel effects under *** MOSFET operates faster and uses less power with increase in ON-state current leading to a good value of ION/IOFF *** this paper,several gate and channel engineered MOSFET structures are analyzed and compared for sub 45 nm technology node.A comparison among different MOSFET structures has been made for subthreshold performance parameters in terms of IOFF,subthreshold slope and DIBL *** analog/RF performance is analyzed for transconductance,effective transistor capacitances,stability factor and critical *** paper also covers different applications of advance MOSFET structures in analog/digital or IoT/biomedical applications.