FABRICATION OF PIEZOELECTRIC BIMORPH USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY HYDROTHERMAL METHOD
FABRICATION OF PIEZOELECTRIC BIMORPH USING LEAD ZIRCONATE TITANATE THIN FILM DEPOSITED BY HYDROTHERMAL METHOD作者机构:Key Laboratory for Precision & Nontraditional Machining Technology of Ministry of Education Dalian University of Technology Dalian 116023 China School of Electronic and Information Engineering Dalian University of Technology Dalian 116023 China Key Laboratory for Micro/Nano Technology and System Dalian University of Technology Dalian 116023 China
出 版 物:《Chinese Journal of Mechanical Engineering》 (中国机械工程学报(英文版))
年 卷 期:2007年第20卷第6期
页 面:5-8页
核心收录:
学科分类:080704[工学-流体机械及工程] 0817[工学-化学工程与技术] 08[工学] 0807[工学-动力工程及工程热物理] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0802[工学-机械工程] 0811[工学-控制科学与工程] 0801[工学-力学(可授工学、理学学位)]
基 金:This project is supported by National Natural Science Foundation of China (No.50675025) Scientific Research Foundation of Ministry of Education,Dalian City for the Returned Overseas Chinese Scholars Doctoral Startup Fund of Liaoning Province of China (No.20051080)
主 题:Piezoelectric bimorph Lead zirconate titanate (LZT) film Hydrothermal method
摘 要:In order to describe the characteristics of piezoelectric bimorph, properties of lead zirconate titanate (LZT) film are studied by X-ray diffraction (XRD) and scanning eletron microscope (SEM). The ratio of PbTiOJPbZrO3 in LZT is 53/47, which is around morphotropic phase boundary (MPB). LZT film is composed of cubic particles with the average size of 5 ~ma. Density of thin film is figured out through the datum measured in experiments. The displacement model used to analyze the driving ability of bimorph is set up, and the effect of elastic intermediate layer is taken into account. Piezoelectric coefficient of LZT film is worked out by using the displacement model. Experiments of driving ability show that deformation of bimorph free end does not increase with times of crystal growth processes and the maximum deformation is obtained after two times crystal growth processes. Finally, the ferroelectric property of the bimorph is investigated and coercive voltage of the bimorph is obtained.