The Anneal Temperature Effect on the BTO and NZFO Films and Their Capacitance-Inductance Integrated Device

作     者：Zhen Zheng Yuhao Shi Chengjie Shi Chunqing Wang 

作者机构：Dept.Electronics Packaging TechnologySchool of Materials Science and EngineeringHarbin Institute of TechnologyHarbin150001China 

出 版 物：《Semiconductor Science and Information Devices》 (半导体科学与信息器件（英文）)

年 卷 期：2019年第1卷第1期

页      面：2-7页

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Capacitor-inductor Integrated device BTO film NZFO film Anneal temperature 

摘      要：In this paper,a novel capacitor-inductor integrated structure was *** dielectric material BaTiO3(BTO)and ferromagnetic material Ni0.5Zn0.5Fe2O4(NZFO)was prepared by sol-gel *** composition and morphology of the thin films were characterized by XRD,SEM and *** effect of annealing temperature on film crystallinity,surface morphology,dielectric properties and ferromagnetism was *** the annealing temperature was 700°C,the BTO film and the NZFO film got the better dielectric properties and ferromagnetic *** the BTO thin film was spin-coated on the substrate,and the NZFO thin film was in-situ sintered on the BTO thin *** composite film possessed both ferromagnetism and dielectric ***,an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.