The influence of K4Fe（CN）6 on the photosensitivity of cubic AgCl microcrystal

作     者：李晓苇 刘荣鹃 耿爱丛 杨少鹏 傅广生 

作者机构：CollegeofPhysicsScienceandTechnologyHebeiUniversityBaoding071002China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2005年第14卷第2期

页      面：404-408页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(Grant 10274017 and 10354001) the Natural Science Foundation of Hebei Province, China(Grant 103097 and 603138) 

主　　题：shallow electron trap photosensitivity trap depth doping concentration capture crosssection 

摘      要：The influence of K4Fe(CN)6 at various doping concentrations on the photosensitivity of cubic AgCl microcrystals has been investigated by using the microwave absorption and phase-sensitive measurement technique. The time behaviour of free photoelectrons in AgCl microcrystals is analysed by using computer simulation as a function of three parameters of shallow electron trap (SET) including doping concentration, trap depth and capture cross-section (CCS).It is found that the three parameters of SET play different roles on the free photoelectron decay time (FDT). After considering the threshold effects of the three parameters and their collective effects, the trap depth value, the CCS value,and the optimal doping concentration of the SET introduced by the dopant K4Fe(CN)6 in cubic AgCl microcrystals can also be determined, and the best photosensitivity of cubic AgCl can be obtained.