β-Ga_(2)O_(3) nanowires and thin films for metal oxide semiconductor gas sensors:Sensing mechanisms and performance enhancement strategies
作者机构:Dipartimento di ChimicaUniversita degli Studi di Bari“Aldo Moro”Via Orabona 470126BariItaly Department of ChemistryCollege of ScienceUniversity of Hafr Al BatinPO Box 1803Hafr Al Batin39524Saudi Arabia
出 版 物:《Journal of Materiomics》 (无机材料学学报(英文))
年 卷 期:2019年第5卷第4期
页 面:542-557页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
主 题:β-Ga_(2)O_(3)nanowires Gas sensors Nanomaterials Semiconductors Sensing mechanisms Thin films
摘 要:The reliable,selective,and fast detection of the inorganic and organic gases in indoor and outdoor air and industrial processes is a huge challenge for environmental sustainability,healthier life,and disease control and *** oxides have been frequently explored as highly sensitive receptor elements in the electronic gas sensors since the *** oxide(Ga_(2)O_(3)),often recognized as one of the widest-bandgap semiconductors,has shown tremendous potential as the inorganic gas receptor because of its extraordinary chemical and thermal stability,and excellent electronic *** article presents a comprehensive reference on the electrical properties,historical developments,detection mechanisms,and gas sensing performance of Ga_(2)O_(3) nanowires and composite *** particular,the relationships between composition,nanostructure,and gas sensing properties of galliumcontaining oxidic nanomaterials such as β-Ga_(2)O_(3) nanowires,surface-modified Ga_(2)O_(3),metal-doped Ga_(2)O_(3) or Ga-doped metal oxides,and Ga_(2)O_(3)/metal oxide composite heterostructures are *** applications of Ga_(2)O_(3) gas sensors are discussed with an emphasis on their practical limitations such as high-temperature operation,power consumption,and miniaturization ***,future research directions and potential developments are suggested.