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Chemical Approaches to Emerging Advancements in Deformable Bioelectronics:Synthesis,Device Concepts,Performance,and Applications

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CCS Chemistry 2024年第1期6卷 11-26页

作者： Jj Abu-Halimah Aman Majmudar Bozhi Tian Department of Chemistry University of ChicagoChicagoIllinois 60637 The James Franck Institute University of ChicagoChicagoIllinois 60637 The Institute for Biophysical Dynamics University of ChicagoChicagoIllinois 60637

This mini review examines the current advances and future prospects of chemical approaches in deformable bioelectronics,emphasizing their transformative potential in healthcare and other sectors.The mini review outlines novel fabrication strategies that rely on chemical principles to create adaptable,comfortable,and durable bioelectronic devices that are capable of seamlessly integrating into the dynamic biological environment.The discussion also extends to the integration of innovative device concepts that enhance the outcomes in both sensing and modulation functionalities.Performance-enhancing strategies that use chemistry to refine the sensitivity and precision of these devices are also highlighted.Moreover,the mini review explores the emerging applications of chemically enhanced bioelectronic devices in healthcare,reflecting the potential of this field to revolutionize patient care and improve health monitoring.In the outlook section,this mini review investigates the promising future of transient and living bioelectronics,emphasizing the pivotal role of chemical approaches in their development.It additionally covers the potential of chemical techniques in powering bioelectronic devices using biological systems and discusses the prospective applications of chemically synthesized bioelectronic devices outside of healthcare.While the field has made substantial progress,this mini review also identifies challenges that must be addressed,thus underlining the necessity for continued research and chemical innovation in bioelectronics.

关键词： deformable bioelectronics hydrogels biointerfaces sensing modulation semiconductors cells and tissues

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A universal additive concept yields record-high efficient organic solar cells

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Science China Materials 2024年第5期67卷 1670-1671页

作者： Mariano Campoy Quiles Institute of Materials Science of Barcelona ICMAB-CSICCampus UAB08193BellaterraSpain

Organic photovoltaics(OPVs)are an emerging light-to-electricity conversion technology that promises flexible,lightweight,semitransparent devices based on abundant and non-toxic organic semiconductors.OPV power conversion efficiency under one sun has been increasing at an average pace of approximately 1%every year over the past 10 years,up to current values circa 20%.This has been possible through the continuous synthesis of improved semiconductors.

关键词： additive semiconductors approximate

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High-Performance Organic Field-Effect Transistors Based on Two-Dimensional Vat Orange 3 Crystals

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Chinese Physics Letters 2024年第2期41卷 122-128页

作者：闫宁熊志仁秦成兵李小茜 State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China State Key Laboratory of Quantum Optics and Quantum Optics Devices Institute of Laser SpectroscopyShanxi UniversityTaiyuan 030006China

The exploration and research of low-cost,environmentally friendly,and sustainable organic semiconductor materials are of immense significance in various fields,including electronics,optoelectronics,and energy conversion.Unfortunately,these semiconductors have almost poor charge transport properties,which range from∼10^(−4) cm^(2)·V^(−1)·s^(−1) to∼10^(−2) cm^(2)·V^(−1)·s^(−1).Vat orange 3,as one of these organic semiconductors,has great potential due to its highly conjugated structure.We obtain high-quality multilayered Vat orange 3 crystals with two-dimensional(2D)growth on h-BN surfaces with thickness of 10–100 nm using physical vapor transport.Raman’s results confirm the stability of the chemical structure of Vat orange 3 during growth.Furthermore,by leveraging the structural advantages of 2D materials,an organic field-effect transistor with a 2D vdW vertical heterostructure is further realized with h-BN encapsulation and multilayered graphene contact electrodes,resulting in an excellent transistor performance with On/Off ratio of 104 and high field-effect mobility of 0.14 cm^(2)·V^(−1)·s^(−1).Our results show the great potential of Vat orange 3 with 2D structures in future nano-electronic applications.Furthermore,we showcase an approach that integrates organic semiconductors with 2D materials,aiming to offer new insights into the study of organic semiconductors.

关键词： transistor orange semiconductors

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A platform for integrated spectrometers based on solution-processable semiconductors

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Light(Science & Applications) 2023年第9期12卷 1739-1748页

作者： Yanhao Li Xiong Jiang Yimu Chen Yuhan Wang Yunkai Wu De Yu Kaiyang Wang Sai Bai Shumin Xiao Qinghai Song Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic SystemsHarbin Institute of Technology(Shenzhen)ShenzhenGuangdong 518055China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengduSichuan 611731China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuanShan`xi 030006China

Acquiring real-time spectral information in point-of-care diagnosis,internet-of-thing,and other lab-on-chip applications require spectrometers with hetero-integration capability and miniaturized feature.Compared to conventional semiconductors integrated by heteroepitaxy,solution-processable semiconductors provide a much-flexible integration platform due to their solution-processability,and,therefore,more suitable for the multi-material integrated system.However,solution-processable semiconductors are usually incompatible with the micro-fabrication processes.This work proposes a facile and universal platform to fabricate integrated spectrometers with semiconductor substitutability by unprecedently involving the conjugated mode of the bound states in the continuum(conjugated-BIC)photonics.Specifically,exploiting the conjugated-BIC photonics,which remains unexplored in conventional lasing studies,renders the broadband photodiodes with ultra-narrowband detection ability,detection wavelength tunability,and on-chip integration ability while ensuring the device performance.Spectrometers based on these ultra-narrowband photodiode arrays exhibit high spectral resolution and wide/tunable spectral bandwidth.The fabrication processes are compatible with solution-processable semiconductors photodiodes like perovskites and quantum dots,which can be potentially extended to conventional semiconductors.Signals from the spectrometers directly constitute the incident spectra without being computation-intensive,latency-sensitive,and error-intolerant.As an example,the integrated spectrometers based on perovskite photodiodes are capable of realizing narrowband/broadband light reconstruction and in-situ hyperspectral imaging.

关键词： semiconductors process integration

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Phonon-assisted upconversion in twisted two-dimensional semiconductors

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Light(Science & Applications) 2023年第1期12卷 89-98页

作者： Yuchen Dai Pengfei Qi Guangyi Tao Guangjie Yao Beibei Shi Zhixin Liul Zhengchang Liu Xiao He Pu Peng Zhibo Dang Liheng Zheng Tianhao Zhang Yongji Gong Yan Guan Kaihui Liu Zheyu Fang School of Physics State Key Laboratory for Mesoscopic PhysicsAcademy for Advanced Interdisciplinary StudiesCollaborative Innovation Center of Quantum MatterNano-optoelectronics Frontier Center of Ministry of EducationPeking University100871 BeijingChina Institute of Modern Optics Nankai UniversityTianjin Key Laboratory of Micro-scale Optical Information Science and Technology300350 TianjinChina Photonics Research Center School of PhysicsMOE Key Lab of Weak-Light Nonlinear Photonicsand Tianjin Key Lab of Photonics Materials and Technology for Information ScienceNankai University300071 TianjinChina School of Materials Science and Engineering Beihang University100191 BeijingChina Center for Physicochemical Analysis and Measurements in ICCAS Analytical Instrumentation CenterPeking University100871 BeijingChina

Phonon-assisted photon upconversion(UPC)is an anti-Stokes process in which incident photons achieve higher energy emission by absorbing phonons.This letter studies phonon-assisted UPC in twisted 2D semiconductors,in which an inverted contrast between UPC and conventional photoluminescence(PL)of WSe2 twisted bilayer is emergent.A 4-fold UPC enhancement is achieved in 5.5°twisted bilayer while PL weakens by half.Reduced interlayer exciton conversion efficiency driven by lattice relaxation,along with enhanced pump efficiency resulting from spectral redshift,lead to the rotation-angle-dependent UPC enhancement.The counterintuitive phenomenon provides a novel insight into a unique way that twisted angle affects UPC and light-matter interactions in 2D semiconductors.Furthermore,the UPC enhancement platform with various superimposable means offers an effective method for lighting bilayers and expanding the application prospect of 2D stacked van der Waals devices.

关键词： twisted semiconductors relaxation

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The rise of halide perovskite semiconductors

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Light(Science & Applications) 2023年第1期12卷 23-24页

作者： Chenlu He Xiaogang Liu Department of Chemistry National University of SingaporeSingapore 117549Singapore

Advances in metal-halide perovskite semiconductors have significantly influenced light-current conversion technologies.The excellent structural and compositional tunability of perovskites,coupled with their exceptiona... 详细信息

关键词： perovskite halide semiconductors

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Nonlinear optics in the electron-hole continuum in 2D semiconductors:two-photon transition, second harmonic generation and valley current injection

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Science Bulletin 2019年第15期64卷 1036-1043页

作者： Pu Gong Hongyi Yu Yong Wang Wang Yao Department of Physics and Center of Theoretical and Computational Physics The University of Hong KongHong KongChina School of Physics Nankai UniversityTianjin 300350China

We investigate two-photon transitions to the electron-hole scattering continuum in monolayer transition-metal dichalcogenides, and identify two contributions to this nonlinear optical process with opposite circularly polarized valley selection rules. In the non-interacting limit, the competition between the two contributions leads to a crossover of the selection rule with the increase of the two-photon energy. With the strong Coulomb interaction between the electron and hole, the two contributions excite electron-hole scattering states in orthogonal angular momentum channels, while the strength of the transition can be substantially enhanced by the interaction. Based on this picture of the two-photon transition, the second harmonic generation(SHG) in the electron-hole continuum is analyzed, where the Coulomb interaction is shown to greatly alter the relative strength of different cross-circular polarized SHG processes. Valley current injection by the quantum interference of one-photon and two-photon transition is also investigated in the presence of the strong Coulomb interaction, which significantly enhances the injection rate.

关键词： 2D semiconductors Nonlinear optics Electron-hole continuum Two-photon transition Second-harmonic generation Valley current injection

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Charge carrier mobilities of organic semiconductors:ab initio simulations with mode-specific treatment of molecular vibrations

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npj Computational Materials 2022年第1期8卷 2199-2209页

作者： Sebastian Hutsch Michel Panhans Frank Ortmann School of Natural Sciences Department of ChemistryTechnische Universität MünchenGarching b.MünchenGermany

The modeling of charge transport in organic semiconductors usually relies on the treatment of molecular vibrations by assuming a certain limiting case for all vibration modes,such as the dynamic limit in polaron theory or the quasi-static limit in transient localization theory.These opposite limits are each suitable for only a subset of modes.Here,we present a model that combines these different approaches.It is based on a separation of the vibrational spectrum and a quantum-mechanical treatment in which the slow modes generate a disorder landscape,while the fast modes generate polaron band narrowing.We apply the combined method to 20 organic crystals,including prototypical acenes,thiophenes,benzothiophenes,and their derivatives.Their mobilities span several orders of magnitude and we find a close agreement to the experimental mobilities.Further analysis reveals clear correlations to simple mobility predictors and a combination of them can be used to identify high-mobility materials.

关键词： theory semiconductors limit

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Photocatalytic reduction of carbon dioxide by titanium oxide- based semiconductors to produce fuels

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Frontiers in Energy 2019年第2期13卷 207-220页

作者： Xi CHEN Fangming JIN China-UK Low Carbon College Shanghai Jiao Tong University Shanghai 201306China School of Environmental Science and Engineering State Key Laboratory of Metal Matrix CompositesShanghai Jiao Tong UniversityShanghai 200240China

To tackle the crisis of global warming, it is imperative to control and mitigate the atmospheric carbon dioxide level. Photocatalytic reduction of carbon dioxide into solar fuels furnishes a gratifying solution to utilize and reduce carbon dioxide emission and simultaneously generate renewable energy to sustain the societies. So far, titanium oxide-based semiconductors have been the most prevalently adopted catalysts in carbon dioxide photoreduction. This mini-review provides a general summary of the recent progresses in titanium oxide- catalyzed photocatalytic reduction of carbon dioxide. It first illustrates the use of structural engineering as a strategy to adjust and improve the catalytic performances. Then, it describes the introduction of one/two exogenous elements to modify the photocatalytic activity and/or selectivity. Lastly, it discusses multi-component hybrid titanium oxide composites.

关键词： photocatalysis carbon dioxide reduction semiconductors titanium oxide renewable fuels

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Universal Theory and Basic Rules of Strain-Dependent Doping Behaviors in semiconductors

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Chinese Physics Letters 2021年第8期38卷 90-95页

作者：晏晓岚李培魏苏淮黄兵 Beijing Computational Science Research Center Beijing 100193China Department of Physics Beijing Normal UniversityBeijing 100875China

Enhancing the dopability of semiconductors via strain engineering is critical to improving their functionalities,which is,however,largely hindered by the lack of basic rules.In this study,for the first time,we develop a universal theory to understand the total energy changes of point defects(or dopants)with different charge states under strains,which can exhibit either parabolic or superlinear behaviors,determined by the size of defect-induced local volume change(ΔV).In general,ΔV increases(decreases)when an electron is added(removed)to(from)the defect site.Consequently,in terms of this universal theory,three basic rules can be obtained to further understand or predict the diverse strain-dependent doping behaviors,i.e.,defect formation energies,charge-state transition levels,and Fermi pinning levels,in semiconductors.These three basic rules could be generally applied to improve the doping performance or overcome the doping bottlenecks in various semiconductors.

关键词： doping defect semiconductors

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