Novel two-step CdS deposition strategy to improve the performance of Cu2ZnSn(S,Se)4 solar cell

作     者：Lifang Teng Junye Tong Gang Wang Lingling Wang Liping Chen Shaotong Wang Yinglin Wang Daocheng Pan Xintong Zhang Yichun Liu Lifang Teng;Junye Tong;Gang Wang;Lingling Wang;Liping Chen;Shaotong Wang;Yinglin Wang;Daocheng Pan;Xintong Zhang;Yichun Liu

作者机构：Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV-Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchun 130024JilinChina State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun 130022JilinChina 

出 版 物：《Journal of Energy Chemistry》 (能源化学（英文版）)

年 卷 期：2020年第29卷第3期

页      面：77-82页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(91833303,51872044,51372036,51202025 and 51602047) the Key Project of Chinese Ministry of Education(113020A) the 111 project(B13013) the Jilin Province Science and Technology Development Project(20180101175JC and 20140520096JH) the Fundamental Research Funds for the Central Universities(2412019FZ043) the Open Project of Key Laboratory for UV Emitting Materials and Technology of Ministry of Education(130028857) 

主　　题：Kesterite Solar cell CdS Two-step deposition Heterojunction interface 

摘      要：Kesterite Cu2ZnSn(S,Se)4(CZTSSe)solar cells have drawn worldwide attention for their promising photovoltaics performance and earth-abundant element composition,yet the record efficiency of this type of device is still far lower than its theoretical conversion *** band alignment and severe non-radiative recombination at CZTSSe/CdS heterojunction interfaces are the major causes limiting the current/voltage output and overall device ***,we propose a novel two-step CdS deposition strategy to improve the quality of CZTSSe/CdS heterojunction interface and thereby improve the performance of CZTSSe solar *** two-step strategy includes firstly pre-deposits CdS thin layer on CZTSSe absorber layer by chemical bath deposition(CBD),followed with a mild heat treatment to facilitate element inter-diffusion,and secondly deposits an appropriate thickness of CdS layer by CBD to cover the whole surface of pre-deposited CdS and CZTSSe *** solar energy conversion efficiency of CZTSSe solar cells with two-step deposited CdS layer approaches to 8.76%(with an active area of about 0.19 cm2),which shows an encouraging improvement of over 87.98%or 30.16%compared to the devices with traditional CBD-deposited CdS layer without and with the mild annealing process,*** performance enhancement by the two-step CdS deposition is attributed to the formation of more favorable band alignment at CZTSSe/CdS interface as well as the effective decrease in interfacial recombination paths on the basis of material and device *** two-step CdS deposition strategy is simple but effective,and should have large room to improve the quality of CZTSSe/CdS heterojunction interface and further lift up the conversion efficiency of CZTSSe solar cells.