Photolithography by a tunable electro-optical lithium niobate phase array

作     者：M. Paturzo C. Del Core S. Grilli S.De Nicola P. Ferraro P. De Natale G. Coppola M. Iodice M. Gioffré 

作者机构：Istituto Nazionale di Ottica Applicata del CNR and LENS-European Laboratory for Nonlinear SpectroscopyVia Campi Flegrei 34 80078 Pozzuoli (Na) Italy Istituto Microelettronica e Microsistemi del CNRVia P. Castellino 111 80131 Napoli Italy 

出 版 物：《Optoelectronics Letters》 (光电子快报（英文版）)

年 卷 期：2007年第3卷第4期

页      面：243-245页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This research was partially funded by the MIUR within the FIRB project ( No. RBNE01KZ94 ) partially by the MIUR project(No.77 DD N.1105/2002) 

主　　题：电光学 光刻实验 铁电物质 锂铌酸盐 

摘      要：Photolithography experiments are performed by means of an optical phase mask with electrooptically tunable phase step. The phase mask consists of a 2-dimensional hexagonal lattice of inverted ferroelectric domains fabricated on a z-cut/ithium niobate substrate. The electro-optically tunable phase step, between inverted domain, is obtained by the application of an external electric field along the z axis of the crystal via transparent electrodes. The collimated beam of an argon laser passes through the phase mask and the near field intensity patterns, at different planes of the Talbot length and for different values of the applied voltage, are used for photolithographic experiments. Preliminary results are shown and further applications are discussed.