An in situ monitoring method for PECVD process equipment condition

作     者：G KANG S AN K KIM S HONG 

作者机构：Department of Electronic Engineering Myongji University Yongin 17058 Republic of Korea 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2019年第21卷第6期

页      面：15-22页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 

基　　金：supported by KEIT 

主　　题：in situ monitoring sensor advanced equipment control 

摘      要：A key to successful consistent plasma processing is maintaining a consistent process chamber condition over a certain production *** alleviate the concern,in situ process monitoring sensors are employed to investigate the plasma chamber conditions of both the deposition step with direct plasma and the cleaning step with a remote plasma *** situ sensors are optical emission spectroscopy (OES),optical plasma monitoring sensors (OPMS),voltage current probes (Ⅵ-probes),and self-plasma OES (SP-OES).During the deposition,we perform the monitoring of a plasma condition associated with the applied RF power via OES,OPMS,and a Ⅵ-*** the chamber cleaning step using a remote plasma system does not allow plasma monitoring through the sidewall because the plasma is not formed in the process chamber,thus we employed SP-OES to monitor the by-product gas chemistry during the chamber cleaning process *** monitoring results with some useful applications,such as arc detection,part failure detection,and cleaning process chemistry analysis,are presented in this *** use of in situ sensors with proper combination can help to understand the plasma process better,to achieve more precise control of plasma processing.