A novel optimization design for 3.3 kV injection-enhanced gate transistor

作     者：田晓丽 褚为利 陆江 卢烁今 喻巧群 朱阳军 

作者机构：Institute of Microelectronics Chinese Academy of Sciences Jiangsu R&D Center for Internet of Things 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第1期

页      面：46-50页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0905[农学-畜牧学] 09[农学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Major Science and Technology Special Project of China(Nos.2011ZX02504-002 2011ZX02603-002) 

主　　题：IEGT dummy cell 3.3kV cell pitch 

摘      要：This paper introduces a homemade injection-enhanced gate transistor （IEGT） with blocking voltage up to 3.7 kV. An advanced cell structure with dummy trench and a large cell pitch is adopted in the IEGT. The carrier concentration at the N-emitter side is increased by the larger cell pitch of the IEGT and it enhances the P-i-N effect within the device. The result shows that the IEGT has a remarkablely low on-state forward voltage drop （VCE（sat）） compared to traditional trench IGBT structures. However, too large cell pitch decreases the channel density of the trench IEGT and increases the voltage drop across the channel, finally it will increase the VCE（sat） of the IEGT. Therefore, the cell pitch selection is the key parameter consideration in the design of the IEGT. In this paper, a cell pitch selection method and the optimal value of 3.3 kV IEGT are presented by simulations and experimental results.