Structural and Optical Characterization of Zn1—xCdxO Thin Films Deposited by dc Reactive Magnetron Sputtering

作     者：MADe-Wei YEZhi-Zhen HUANGJing-Yun ZHAOBing-Hui WANShou-Ke SUNXue-Hao WANGZhan-Guo 

作者机构：StateKeyLaboratoryofSiliconMaterialsZhejiangUniversityHangzhou310027 InstituteofSemiconductorChineseAcademyofSciencesBeijing100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2003年第20卷第6期

页      面：942-943页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：国家973计划 国家自然科学基金 

主　　题：Thin films 

摘      要：Zn1-xCdxO crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron sputtering technique. X-ray diffraction measurements show that the Zn1-xCdxO films are of completely (002)-preferred orientation for x≤0.6. For x = 0.8, the film is a mixture of ZnO hexagonal wurtzite crystals and CdO cubic crystals. For pure CdO, it is highly (200) preferential-oriented. Photoluminescence spectrum measurement shows that the Zn1-xCdxO (x = 0.2) thin film has a redshift of 0.14eV from that of ZnO reported previously.