Graphene Nanoribbons from Tetraphenylethene-Based Polymeric Precursor： Chemical Synthesis and Application in Thin-Film Field-Effect Transistor

作     者：Ji Ma Haoyun Zhu Wei Huang Tingting Lin Xiaoyong Pan Weizhi Wang 

作者机构：State Key Laboratory of Molecular Engineering of Polymers Collaborative Innovation Center of Polymers andPolymer Composite Materials Department of Macromolecular Science Fudan University Shanghai 200433 China Institute of Materials Research and Engineering A ＊STAR (Agency for Science Technology and Research) 2 Fusionopolis Way Innovis #08-03 Singapore 138634 Singapore 

出 版 物：《Chinese Journal of Chemistry》 (中国化学（英文版）)

年 卷 期：2015年第33卷第12期

页      面：1380-1388页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was financially supported by the National Natural Science Foundation of China (21274027 and 20974022) and the Innovation Program of Shanghai Municipal Education Commission (15ZZ002) 

主　　题：graphene nanoribbons transistor tetraphenylethene device 

摘      要：Graphene nanoribbons （GNRs） with a non-zero bandgap are regarded as a promising candidate for the fabrica- tion of electronic devices. In this study, large-scale solution synthesis of narrow GNRs was firstly achieved by the intramolecular cyclodehydrogenation of kinked tetraphenylethene （TPE） polymer precursors prepared by A2B2-type Suzuki-Miyaura polymerization. After the cyclization reaction, the nanoribbons have a better conjugation than the twisted polymer precursor, resulting in obvious red shift in UV/vis absorption and photoluminescence （PL） spectra. The efficient formation of conjugated nanoribbons was also investigated by Raman, FTIR spectroscopy, and micro- scopic studies. Furthermore, such structurally well-defined GNRs have been successfully developed for top-gated field-effect transistor （FET） by directly solution processing. The AFM images show that the prepared-GNRs thin films form crystalline fibrillar intercalating networks, which can effectively facilitate the charge transport. These FET devices with ion-gel gate dielectrics exhibit low-voltage operation （〈5 V） with excellent mobility up to 0.41 cm2·V-1·s-1 and an on-off ratio of 3 × 104, thus opening up new opportunities for flexible GNRs-based electronic devices.