Evidence of Positron Trapping into Defects in Zn-Doped GaAs

作     者：Wang Zhu, Zheng Zi-yao, Su Ben-fa, Hu Wei-guo School of Physics and Technology, Wuhan University , Wuhan 430072, Hubei, China Wang Zhu, Zheng Zi-yao, Su Ben-fa, Hu Wei-guo School of Physics and Technology, Wuhan University , Wuhan 430072, Hubei, China

作者机构：School of Physics and Technology Wuhan University Wuhan Hubei China 

出 版 物：《Wuhan University Journal of Natural Sciences》 (武汉大学学报（自然科学英文版）)

年 卷 期：2003年第8卷第4A期

页      面：1103-1106页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：SupportedbytheNationalNaturalScienceFoundationofChinaandtheNationalScienceFoundationofHubeiProvince(1 0 3750 4 3) 

主　　题：positron annihilation defect semiconductor deformation p-type GaAs 

摘      要：The defect properties in as-grown and deformed p-type GaAs with different concentration of dopants and different growth method have investigated by positron lifetime measurement. The result indicates that no positron trapping was observed in LEC-grown Zn-doped p-type GaAs. However, in HB- and FZ-grown Zn-doped GaAs, positron trapping into vacancy type defects was observed. In deformed samples, clusters were formed during deformation. Positron detected shallow positron traps and the dominant shallow positron traps were attributed to Zn acceptors in Zn-doped GaAs.