Raman scattering of polycrystalline GaSb thin films grown by the co-evaporation process

作     者：乔在祥 孙云 何炜瑜 刘玮 何青 李长健 

作者机构：The Tianjin Key Laboratory for Photoelectronics Thin Film Devices and TechnologyNankai University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第5期

页      面：2012-2015页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National 863 Program of China(Grant No 2004AA513020) 

主　　题：GaSb co-evaporation Raman stress 

摘      要：This paper reports that CaSb thin films have been co-deposited on soda-lime glass substrates. The GaSb thin film structural properties are characterized by Raman spectroscopy. The Sb-A1g/GaSb-TO ratio decreases rapidly with the increase of substrate temperature, which suggests a small amount of crystalline Sb in the GaSb thin film and suggests that Sb atoms in the thin film decrease. In Raman spectra, the transverse optical （TO） mode intensity is stronger than that of the longitudinal optical （LO） mode, which indicates that all the samples are disordered. The LO/TO intensity ratio increases with increasing substrate temperature which suggests the improved polycrystalline quality of the CaSb thin film. A downshift of the TO and LO frequencies of the polycrystalline CaSb thin film to single crystalline bulk GaSb Raman spectra is also observed. The uniaxial stress in GaSb thin film is calculated and the value is around 1.0 GPa. The uniaxial stress decreases with increasing substrate temperature. These results suggest that a higher substrate temperature is beneficial in relaxing the stress in GaSb thin film.