Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p-n heterojunctions

作     者：Xiaoting Wang Le Huang Yuting Peng Nengjie Huo Kedi Wu Congxin Xia Zhongming Wei Sefaattin Tongay Jingbo Li 

作者机构：State Key Laboratory of Superlattices and Microstructures Institute of semiconductors Chinese Academy of Sciences RO. Box 9/2 Beijing 100083 China Physics and Electronic Engineering College Henan Normal University Xinxiang 453007 China School for Engineering of Matter Transport and Energy Arizona State University Tempe Arizona 85287 USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2016年第9卷第2期

页      面：507-516页

核心收录：

学科分类：080801[工学-电机与电器] 070207[理学-光学] 0808[工学-电气工程] 07[理学] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was supported by the "Hundred Talents Program" of Chinese Academy of Sciences (CAS) the National Natural Science Foundation of China (No. 91233120)  and the CAS/SAFEA International Partnership Program for Creative Research Teams 

主　　题：ReSe2/MoS2 van der Waals heterojuncfion rectification optoelectronic properties 

摘      要：Van der Waals （vdW） heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor （FET） compared with the individual components, and a high current responsivity （Rλ） and external quantum efficiency （EQE） of 6.75 A/W and 1,266%, respectively, for the photodetector.