Silicon and III-V Solar Cells: From Modus Vivendi to Modus Operandi

作     者：Alexander Buzynin Yury Buzynin Vladimir Shengurov Vladimir Voronkov Ansgar Menke Albert Luk’yanov Vitaly Panov Nickolay Baidus 

作者机构：Prokhorov General Physics Institute Russian Academy of Sciences Moscow Russia Institute for Physics of Microstructures Russian Academy of Sciences Nizhny Novgorod Russia Lobachevski State University Nizhny Novgorod Russia SunEdison Milano Italy Academy of Science and Education Maico-Mannesmann Hannover Germany Lomonosov Moscow State University Moscow Russia 

出 版 物：《Green and Sustainable Chemistry》 (绿色与可持续化学（英文）)

年 卷 期：2017年第7卷第3期

页      面：217-233页

学科分类：1002[医学-临床医学] 100214[医学-肿瘤学] 10[医学] 

主　　题：Solar Cells Green Technologies p-n Junctions Ar Ion-Irradiation Inversion of Conductivity Silicon III-V GaAs on Si Ge Buffer YSZ Antireflection Coatings 

摘      要：In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.