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Metal-organic framework coated titanium dioxide nanorod array p-n heterojunction photoanode for solar water-splitting

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nano Research 2019年第3期12卷 643-650页

作者： Hui Yang Joeseph Bright Sujan Kasani peng Zheng Terence Musho Banglin Chen Ling Huang nianqiang Wu Department of Mechanical and Aerospace Engineering West Virginia University Morgantown WV 26506-6106 USA C. Eugene Bennett Department of Chemistry West Virginia University Morgantown WV 26506-6045 USA Department of pharmaceutical Science West Virginia University Morgantown WV 26506-9530 USA Lane Department of Computer Science and Electrical Engineering West Virginia University Morgantown WV 26506 USA Department of Chemistry University of Texas at San Antonio One UTSA Circle San Antonio TX 78249-1604 USA Institute of Advanced Materials (IAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China

This paper presents a p-n heterojunction photoanode based on a p-type porphyrin metal-organic framework (MOF) thin film and an n-type rutile titanium dioxide nanorod array for photoelectrochemical water splitting. The TiO2@MOF core-shell n anorod array is formed by coati ng an 8 nm thick MOF layer on a vertically aligned TiO2 nanorod array scaffold via a layer-by-layer self-assembly method. This vertically aligned core-shell nanorod array enables a long optical path length but a short path length for extraction of photogenerated minority charge carriers (holes) from TiO2 to the electrolyte. A p-n junction is formed between TiO2 and MOF, which improves the extraction of photogenerated electr ons and holes out of the TiO2 nano rods. In additi on, the MOF coati ng sign ificantly improves the efficie ncy of charge in jecti on at the photoanode/electrolyte interface. Introduction of Co(lll) into the MOF layer further enhances the charge extraction in the photoanode and improves the charge injection efficiency. As a result, the photoelectrochemical cell with the TiO2@Co-MOF nanorod array photoanode exhibits a photocurrent density of 2.93 mA/cm^2 at 1.23 V (vs. RHE), which is ~ 2.7 times the photocurrent achieved with bare T1O2 nanorod array under irradiation of an unfiltered 300 W Xe lamp with an output power density of 100 mW/cm^2.

关键词： metal-organic framework water-splitting p-n junction photoanode titanium dioxide

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Creation of passivated nb/n p-n co-doped ZnO nanoparticles and their enhanced photocatalytic performance under visible light illumination

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Journal of Materials Science & Technology 2019年第4期35卷 610-614页

作者： Shuang Gao Weiyi Yang Jun Xiao Bo Li Qi Li Division of Energy and Environment Graduate School at ShenzhenTsinghua University Environment Functional Materials Division Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences

passivated niobium/nitrogen(nb-n) p-n co-doped zinc oxide nanoparticles were created by a simple precipitation process with in-situ self-formed naCl "cage" to confine the nanoparticle growth followed by the heat treatment in a flow of ammonia gas. Enhanced optical absorbance into the visible light region was observed in the nb/n co-doped ZnO nanoparticle photocatalyst due to the nb/n co-doping *** demonstrated a largely enhanced photocatalytic performance in the disinfection of Escherichia coli bacteria under visible light illumination, which could be attributed to the passivated co-doping of nbn to suppress the photogenerated charge carrier recombination on dopants. This robust approach for passivated p-n co-doping may also be applied to other material systems for a wide range of technical applications.

关键词： Zinc oxide nanoparticles passivated nb/n p-n Co-doping photocatalyst Visible light

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nanosecond photoelectric effects in all-oxide p-n junction of La_(0.9)Sr_(0.1)MnO_(3)/Srnb_(0.01)Ti_(0.99)O_(3)

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Science China(physics,Mechanics & Astronomy) 2005年第3期48卷 381-384页

作者： HUAnG Yanhong L(U) Huibin HE Meng ZHAO Kun CHEn Zhenghao CHEnG Bolin ZHOU Yueliang JIn Kuijuan DAI Shouyu YAnG Guozhen Beijing national Laboratory for Condensed Matter physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080 China

nanosecond (ns) photoelectric effects have been observed in all-oxide p-n junctions of La0.9Sr0.1MnO3/Srnb0.01Ti0.99O3 for the first time. The rise time was about 23 ns and the full width at half maximum was about 125 ns for the open-circuit photovoltaic pulse when the La0.9Sr0.1MnO3 thin film in the p-n junction was irradiated by a laser of ~20 ns pulse duration and 308 nm wavelength. The photovoltaic sensitivity was 80 mV/mJ for a 308 nm laser pulse.

关键词： perovskite oxide, p-n junction, photoelectric effect.

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Twisted Intramolecular Charge Transfer of p-n, n-Dimethylaminobenzoic Acid in Cetyltrimethylammonium Chloride Micelle

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Chinese Science Bulletin 1994年第14期39卷 1179-1183页

作者：江云宝 Department of Chemistry & Institute of Analytical Chemistry Xiamen University Xiamen 361005 PRC

Twisted intramolecular charge transfer (TICT) is one of the hot points in condensed phase photochemistry at the present time. Most of the studies on TICT up to now, however, are performed in organic medium, which leads to a correlation that the intensity ratio of the long-wavelength TICT fluorescence band (a band) to shortwavelength normal fluorescence band (b band), I_a/I_h, increases with the medium polarity. It is unknown whether such a correlation is applicable to aqueous solution or it is in the transition from organic solvent through water. Thus a systematic study of TICT in aqueous solution and its comparison with that in organic medium are significant for the development and deepening of the theory and application of TICT. In the present note, a steady-state fluorescence spectroscopic study of TICT of p-n, n-dimethylaminobenzoic acid (DMABOA) in aqueous cetyltrimethylammonium chloride (CTMAC) micellar solution is described.

关键词： twisted intramolecular charge transfer dual fluorescence p-n n-dimethylaminobenzoic acid micellar effects.

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Light-triggered two-dimensional lateral homogeneous p-n diodes for opto-electrical interconnection circuits

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Science Bulletin 2020年第4期65卷 293-299页

作者： Dong Li Chenguang Zhu Huawei Liu Xingxia Sun Biyuan Zheng Ying Liu Yong Liu Xingwang Wang Xiaoli Zhu Xiao Wang Anlian pan Key Laboratory for Micro-nano physics and Technology of Hunan province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

The realization of light-triggered devices where light is used as external stimulus to control the device performances is a long-standing goal in modern opto-electrical interconnection *** this work,it reveals that light illumination can induce the formation of p-n junctions along two-dimensional conduction *** results indicate that the dominant charge carrier type and density in black phosphorus(Bp)conduction channel can be effectively modulated by the underlying cadmium sulfide(CdS)photogate layer under light *** enables flexible switching of the working state between Bp resistor and Bp p-n diode in the designed semi-photo-gate transistor(SpGT)devices when switching the light on and off(ultra-low threshold light power).Simultaneously,the achieved Bp p-n junctions also exhibit ultra-high photoresponsivity and evident photovoltaic *** is to say,light can be employed as external stimulus to define the Bp p-n junctions,and in turn the p-n junctions will further convert the light into electrical power,showing all-in-one opto-electrical interconnection ***,the SpGT device architecture is also applicable for construction of other ambipolar semiconductor-based(WSe2-and MoTe2-based)p-n *** universal all-in-one light-triggered lateral homogeneous pn junctions with ultra-low energy consumption should open a new pathway toward novel optoelectronic devices and deliver various new applications.

关键词： Two-dimensional materials Light-triggered device p-n diodes Opto-electrical interconnection circuits

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Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i>Gan Diode Fabricated by RF Magnetron Sputtering

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Materials Sciences and Applications 2015年第9期6卷 809-817页

作者： Thi Tran Anh Tuan Dong-Hau Kuo Cheng-Che Li Guan-Zhang Li Department of Materials Science and Engineering National Taiwan University of Science and Technology Taiwan School of Basic Sciences Tra Vinh University Tra Vinh Vietnam

The p-n junction Gan diodes were all fabricated by sputtering technique with cermet targets for p- and n-type Gan and metal targets for electrodes. The interface of these p-n junction Gan diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 × 10–7 A, the breakdown voltage of –6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs’ method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200°C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.

关键词： p-n Gan Diode I-V Measurement Barrier Height Leakage Current Cheungs’ Method

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低温下低掺杂硅p-n结正向伏安特性的异常现象

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低温物理学报 1989年第2期 148-153页

作者：殷之义顾锦模陈石龄金汴骏上海科技大学物理系

实验观察到低温下低掺杂硅 p-n 结的异常现象.在14—25K 的温区里,出现正向伏安特性曲线交叉、击穿电压峰以及当正向注入电流恒定时正向电压随温度变化特性呈现非单调性.对异常现象作了讨论,提出低温下“热”载流子的存在引起杂质碰撞... 详细信息

实验观察到低温下低掺杂硅 p-n 结的异常现象.在14—25K 的温区里,出现正向伏安特性曲线交叉、击穿电压峰以及当正向注入电流恒定时正向电压随温度变化特性呈现非单调性.对异常现象作了讨论,提出低温下“热”载流子的存在引起杂质碰撞电离可能是产生这些现象的原因.

关键词：伏安特性异常现象结正 p-n 载流子浓度载流子密度低温电场强度下低

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Twisted IntramoIecular Charge Transfer in Supramolecular System——Microenvironmental Effects of β-Cyclodextrin on the TICT process of p-n, n-Dimethylaminobenzaldehyde

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Science China Chemistry 1993年第9期36卷 1025-1035页

作者：江云宝黄贤智 Department of Chemistry & Institute of Analytical Chemistry Xiamen University Xiamen 361005 PRC

The microenvironmental effects of β-cyclodextrin (β-CD) on the twisted intramolecular charge transfer (TICT) of ρ-n, n-dimethylaminobenzaldehyde (DMABA) are investigated using fluorescence spectroscopy. The typical TICT dual fluorescence of DMABA is observed in pure water and aqueous β-CD solution, and β-CD has s remarkable influence on the TICT fluorescence characteristics of DMABA. A linear dependence of the ratio of intensity of TICT fluorescence band (a band) to that of normal fluorescence band (b band) on DMABA concentration is also observed and the introduction of β-CD increases the linear slope. Combined with the results of absorption spectroscopy, fluorescence polarization, and peculiar salt effects, the properties of TICT state of DMABA, the interaction of DMABA with β-CD, and the intrinsic traits of the microenvironmental effects of β-CD are discussed in detail.

关键词： TICT microenvironmental effect β-cyclodextrin p-n n-dimethylaminobenzaldehyde.

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p-n型多臂结构有机光电材料的设计合成与性能研究

p-n型多臂结构有机光电材料的设计合成与性能研究

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作者：赵玲玲南京邮电大学

学位级别：硕士

具有p-n型多臂结构有机光电材料因其分子独特的结构和光电性能在光电器件方面得到了广泛的应用,尤其是在有机电致发光二极管、有机太阳能电池和有机电存储等领域。p-n型有机光电材料的p-n型电子之间可能发生光诱导的能量转移和电子转移... 详细信息

具有p-n型多臂结构有机光电材料因其分子独特的结构和光电性能在光电器件方面得到了广泛的应用,尤其是在有机电致发光二极管、有机太阳能电池和有机电存储等领域。p-n型有机光电材料的p-n型电子之间可能发生光诱导的能量转移和电子转移,并可以通过改变p或n型电子的结构以及连接方式有效地调节分子光谱和能级;多臂结构有机光电材料不仅有助于抑制刚性分子链间的聚集,而且可以提高材料的稳定性和溶解性,可溶于氯仿等常用有机试剂。我们通过改变外围给电子基团种类、外围共轭长度、烷基的位置和中心核的类型四种方式来改变给体结构,系统地考察了p-n型分子在光物理、电化学和光电性能方面的影响。首先,我们以三并茚为核、以噻吩-苯噻唑衍生物为枝臂的星型多取代化合物p1、p2和p3。通过光谱和循环伏安法研究了在通过改变烷基的连接位置,通过改变烷基噻吩单元的数量来改变共轭长度。由于给电子能力的不同,对分子吸收波长和光致发光的颜色的影响,以及对分子能级的调节作用。以这一系列分子为发光层通过旋涂法制备了电致发光器件,得到了相关的发光性能参数,并分析比较了它们之间的关系。研究发现,器件p1和p2发射橙光,而p3发射红光。其中,器件p2的最大亮度达到4683cd/cm2,电流密度为0.5cd/A。与MADn掺杂后的p3的最大亮度为4730cd/cm2,电流密度为2.5cd/Ao然后,我们设计并合成了以咔唑为封端,对称取代苯并噻二唑衍生物的线性小分子p4和p6,及以三并茚为核、以噻吩-苯噻唑衍生物为枝臂、咔唑基团封端的星型多取代化合物p5和p7。实验研究了通过改变分子结构类型和引入噻吩单元来调节分子能隙。一方面,以这一系列材料作为发光层制备OLED得到相关的发光性能参数,并比较它们之间的关系。最后,我们合成了我们成功通过微波反应合成了含量不同的一系列“A3+AB”型的白光聚合物FCZTBTX和"A4+AB"型的白光聚合物F(CZ):FBTX,星形聚合物的优点在于防止分子间聚集,避免荧光淬灭,从而提高器件的发光效率。分析了两个聚合物的光物理和电化学性质,并通过旋涂方法制备白光pLED器件,FCZTBT5的最大亮度达到737cd/m2,色坐标(0.33,0.34),器件比较接近白光;聚合物F(CZ)2FBT2.5的器件结构为ITO/pEDOT:pSS/F(CZ)2FBT2.5(45nm)/Ca (5nm)/Al (80nm),最大电流效率为0.74cd/A,测得12.0V下亮度为5980cd/m2;聚合物F(CZ)2FBT5器件结构为ITO/pEDOT:pSS/F(CZ)2FBT5(60nm)/Ca (5nm)/Al (80nm),最大电流效率为1.63cd/A,测得8.8V下亮度为5712cd/m2。

关键词：多臂结构窄带隙 p-n 有机电致发光

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Co/Sn非补偿p-n共掺杂调控In2O3稀磁氧化物的局域结构与磁性

Co/Sn非补偿p-n共掺杂调控In2O3稀磁氧化物的局域结构与磁性

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作者：潘非天津理工大学

学位级别：硕士

本论文采用磁控溅射法,在SiO/Si(100)和超白玻璃基片上制备Co/Sn共掺杂InO稀磁半导体薄膜。利用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XpS)、X射线吸收精细结构(XAFS),电阻温度曲线(R-T)、Hall效应、磁电阻(MR)、超导... 详细信息

本论文采用磁控溅射法,在SiO/Si(100)和超白玻璃基片上制备Co/Sn共掺杂InO稀磁半导体薄膜。利用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XpS)、X射线吸收精细结构(XAFS),电阻温度曲线(R-T)、Hall效应、磁电阻(MR)、超导量子干涉仪(SQUID)、紫外-可见光吸收光谱(UV)等表征手段研究Co/Sn共掺杂InO稀磁半导体,分析p-n共掺杂对InO稀磁半导体薄膜的局域结构及自旋相关磁、光、输运性能的影响,研究结果如下:1、制备了不同Co掺杂浓度的(InCoSn)O薄膜。XRD、XpS以及具有元素分辨的同步辐射XAFS测试表明,制备的(InCoSn)O薄膜都具有立方方铁锰矿InO结构,晶格中存在大量氧空位,Co主要是以+2价形式替位InO中In离子。但即使在低Co掺杂浓度(x=0.05)下,仍有少量Co分离相,即Co金属磁团簇出现,随着Co掺杂浓度增加,Co磁团簇也随之进一步增加。输运性能测试表明,所有薄膜样品均表现负磁阻行为,随着Co掺杂浓度的增加,载流子浓度逐渐降低,电阻率增加。薄膜样品的导电机制在低温区符合Mott变程跃迁,而高温区符合硬带跃迁,证实了载流子有强局域性。U-V测试分析发现,薄膜样品的透光率随Co掺杂浓度的增加逐渐减低,吸收边发生红移,禁带宽度也逐渐变小。磁性测试表明,所有样品都具有有明显的室温铁磁性。随着Co掺杂浓度的增加,饱和磁化强度先增大后减小。室温铁磁性起源排除了载流子媒介机制,很可能源于氧空位诱发的束缚磁极子机制。当Co的掺杂浓度过高时,更多的磁性离子出现在束缚磁极子之外,表现为反铁磁性,薄膜样品Ms减弱。2、制备不同Sn掺杂浓度变化的(InCoSn)O)薄膜。局域结构分析表明,制备的(InCoSn)O)薄膜都具有立方方铁锰矿InO结构。当Sn掺杂浓度为x=0.02时,掺杂的Co和Sn元素主要是以+2和+4价形式替位InO中In离子,但存在少量Co金属磁团簇分离相。随着Sn掺杂浓度增加,Co磁团簇逐渐消失,最终完全替位InO中In离子。这一结果证实了Sn4+离子与Co2+离子的p-n共掺杂由于具有相反的电性而相互吸引,有利于降低晶格取代位置的缺陷形成能,促进晶格替位,抑制Co磁团簇的产生。输运性能测试表明,随着Sn的掺杂浓度增加,n型载流子浓度单调增加,但薄膜的导电机制在低温仍符合Mott变程跃迁,证实载流子有强局域性。U-V测试分析发现,薄膜样品的透光率随着Sn的掺杂浓度增加而升高,吸收边发生了蓝移,禁带宽度逐渐变大。所有薄膜样品均有室温铁磁性,随Sn掺杂浓度增加,饱和磁化强度Ms随之增大。由于载流子的强局域性以及超顺磁Co的存在,室温铁磁性起源排除了载流子媒介机制和Co磁团簇第二相,很可能源于氧空位诱发的束缚磁极子机制。当Sn的掺杂浓度增加,促进了Co进入晶格替位,有效增加束缚磁极子数目增加,导致薄膜样品的铁磁性增加。

关键词： In2O3 稀磁半导体 p-n 共掺杂局域结构磁性

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