Electrical Properties of CuO-Doped PZT-PZN-PMnN Piezoelectric Ceramics Sintered at Low Temperature

作     者：Phan Dinh Gio Le Dai Vuong Ho Thi Thanh Hoa 

作者机构：Department of Physics College of Sciences Huê University Huê Vietnam Faculty of Chemical and Environmental Engineering Huê Industry College Huê Vietnam 

出 版 物：《Journal of Materials Science and Chemical Engineering》 (材料科学与化学工程（英文）)

年 卷 期：2014年第2卷第11期

页      面：20-27页

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：Crystal Structure Dielectric Piezoelectric Constant Mechanical Quality Factor 

摘      要：The 0.8Pb(Zr0.48Ti0.52)O3-0.125Pb(Zn1/3Nb2/3)O3-0.075Pb(Mn1/3Nb2/3)O3 (PZT-PZN-PMnN) + x wt% CuO piezoelectric ceramics, where x = 0.0, 0.05, 0.075, 0.10, 0.125, 0.150, and 0.175, have been fabricated by the conventional solid-state reaction method and the B-site Oxide mixing technique (BO). The effect of CuO on the sinterability, structure, and electrical properties of PZT-PZN-PMnN ceramics was systematically studied. The CuO addition significantly reduced the sintering temperature of the ceramics from 1150°C to 850°C. Experimental results showed that with the doping of CuO, all the ceramics could be well sintered and exhibit a dense, pure perovskite structure. The specimen containing 0.125 wt% CuO sintered at 850°C showed the good electrical properties: the density of 7.91 g/cm3;the electromechanical coupling factor, kp = 0.55 and kt = 0.46;the dielectric constant, ε = 1179;the dielectric loss (tand) of 0.006;the mechanical quality factor (Qm) of 1174;the piezoelectric constant (d31) of 112 pC/N.