Positive Magnetoresistance in Hydrogenated Amorphous Alloys Silicon Nickel a-Si<sub>1-y</sub>Niy:H at Very Low Temperature with Magnetic Field

作     者：Abdelfattah Narjis Abdelhamid El kaaouachi Jamal Hemine Abdelghani Sybous Lhoussine Limouny Said Dlimi Rachid Abdia Gerard Buskipski 

作者机构：Laboratoire de Physique de la Matière Condensée Département de Physique Faculté des Sciences et Techniques de Mohammadia Mohammedia Morocco Laboratoire de Spectroscopie Hertzienne LSH Université de LilleI Villeneuve d’Ascq Cedex France Research Group ESNPS Physics Department Faculty of Sciences University Ibn Zohr Agadir Morocco 

出 版 物：《Journal of Modern Physics》 (现代物理（英文）)

年 卷 期：2012年第3卷第6期

页      面：447-450页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：Amorphous Silicon-Nickel Alloys a-Si1-yNiy:H Variable Range Hopping Conductivity Metal Insulator Transition Positive Magnetoresistance 

摘      要：We present results of an experimental study of magnetoresistance phenomenon in an amorphous silicon-nickel alloys a-Si1-yNiy:H:H (where y = 0.23) on the insulating side of the metal-insulator transition (MIT) in presence of magnetic field up to 4.5 T and at very low temperature. The electrical resistivity is found to follow the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T -1/2. This behaviour indicates the existence of the Coulomb gap (CG) near the Fermi level.