Effect of Substrates on the Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

作     者：Adel Taabouche Abderrahmane Bouabellou Fouad Kermiche Faouzi Hanini Sarah Menakh Yacine Bouachiba Tahar Kerdja Chawki Benazzouz Mohamed Bouafia Saad Amara 

作者机构：Advanced Technology Development Center (CDTA) Baba-Hassen Algiers Algeria Center CRNA 2 Bd Franz Fanon Algiers Algeria Laboratory of Applied Optics Ferhat Abbas University Setif Algeria Thin Films and Interfaces Laboratory University of Constantine Constantine Algeria 

出 版 物：《Advances in Materials Physics and Chemistry》 (材料物理与化学进展（英文）)

年 卷 期：2013年第3卷第4期

页      面：209-213页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：ZnO Thin Films PLD Silicon X-Ray Diffraction Optical Transmittance RBS 

摘      要：Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450°C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz, 2 J/cm2). The effects of glass and silicon substrates on structural and optical properties of ZnO films have been investigated. X-ray diffraction patterns showed that ZnO films are polycrystalline with a hexagonal wurtzite—type structure with a strong (103) orientation and have a good crystallinity on monocrystalline Si(100) substrate. The thickness and compositional depth profile were studied by Rutherford Backscattering spectrometry (RBS). The average transmittance of ZnO films deposited on glass substrate in the visible range is 70%.