Numerical Modeling and Simulation of CIGS-Based Solar Cells with ZnS Buffer Layer
Numerical Modeling and Simulation of CIGS-Based Solar Cells with ZnS Buffer Layer作者机构：Laboratoire d’Energie Solaire Université Félix Houphouë t Boigny Abidjan Cote d’Ivoire Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) UMR CNRS 8520. Laboratoire Central Villeneuve d’Ascq Cedex Lille France
出 版 物：《Open Journal of Modelling and Simulation》 (建模与仿真（英文）)
年 卷 期：2017年第5卷第4期
页 面：218-231页
主 题：Cu(In1-xGax)Se2 Thin-Film Solar Cell Numerical Modeling AFORS-HET Simulation Optimization
摘 要：Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.
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