Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

作     者：V. R. Chinchamalatpure S. A. Ghosh G. N. Chaudhari 

作者机构：不详 

出 版 物：《Materials Sciences and Applications》 (材料科学与应用期刊（英文）)

年 卷 期：2010年第1卷第4期

页      面：187-190页

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：Sol-Gel Technique BaTiO3 Thin Film C-V I-V 

摘      要：BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.