PEALD-deposited crystalline GaN films on Si(100) substrates with sharp interfaces

作     者：San-Jie Liu Ying-Feng He Hui-Yun Wei Peng Qiu Yi-Meng Song Yun-Lai An Abdul Rehman Ming-Zeng Peng Xin-He Zheng 刘三姐;何荧峰;卫会云;仇鹏;宋祎萌;安运来;阿布度-拉赫曼;彭铭曾;郑新和

作者机构：School of Mathematics and PhysicsBeijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceUniversity of Science and Technology Beijing(USTB) 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第2期

页      面：376-382页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the Fundamental Research Funds for the Central Universities(Grant Nos.FRF-BR-16-018A,FRF-TP-17-022A1,and FRF-TP-17-069A1) the National Natural Science Foundation of China(Grant Nos.61274134 and 51402064) USTB Start-up Program(Grant No.06105033) China Postdoctoral Science Foundation(Grant No.2018M631333) Beijing Natural Science Foundation(Grant Nos.2184112 and 4173077) Beijing Innovation and Research Base Fund(Grant No.Z161100005016095) the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2015387) 

主　　题：gallium nitride PEALD sharp interface x-ray reflectivity high resolution transmission electron microscopy 

摘      要：Polycrystalline gallium nitride(GaN) thin films were deposited on Si(100) substrates via plasma-enhanced atomic layer deposition(PEALD) under optimal deposition parameters. In this work, we focus on the research of the GaN/Si(100)interfacial properties. The x-ray reflectivity measurements show the clearly-resolved fringes for all the as-grown GaN films, which reveals a perfectly smooth interface between the GaN film and Si(100), and this feature of sharp interface is further confirmed by high resolution transmission electron microscopy(HRTEM). However, an amorphous interfacial layer(~ 2 nm) can be observed from the HRTEM images, and is determined to be mixture of Ga_xO_y and GaN by xray photoelectron spectroscopy. To investigate the effect of this interlayer on the GaN growth, an AlN buffer layer was employed for GaN deposition. No interlayer is observed between GaN and AlN, and GaN shows better crystallization and lower oxygen impurity during the initial growth stage than the GaN with an interlayer.