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Monolithic crystalline silicon solar cells with SiN_x layers doped with Tb^(3+) and Yb^(3+) rare-earth ions

Monolithic crystalline silicon solar cells with SiN_x layers doped with Tb^(3+) and Yb^(3+) rare-earth ions

作     者:Ing-Song Yu Shao-Chun Wu Lucile Dumont Julien Cardin Christophe Labbé Fabrice Gourbilleau 

作者机构:Department of Materials Science and Engineering National Dong Hwa University CIMAP CNRS/CEA/ENSICAEN/Université de Caen Normandie 

出 版 物:《Journal of Rare Earths》 (稀土学报(英文版))

年 卷 期:2019年第37卷第5期

页      面:515-519页

核心收录:

学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:Project supported by Ministry of Science and Technology,Taiwan(MOST 105-2911-I-259-501) the French Agence Nationale de Recherche through the GENESE Project(ANR-13-BSS09-0020-01) the French Ministry of Research through the ORCHID Project(33572XF) 

主  题:Crystalline silicon solar cell Spectrum conversion Silicon nitride Down-shifting Rare-earth ion Anti-reflection coating 

摘      要:In this study, we propose the fabrication of monolithic crystalline silicon solar cells with Tb^(3+) and Yb^(3+)-doped silicon nitride(SiN_x) layers by low-cost screen-printing methods. The performances of c-Si solar cells can be enhanced by rare-earth ions doped SiN_x layers via the mechanism of spectrum *** SiN_x doped and codoped thin films were deposited by reactive magnetron co-sputtering and integrated as the antireflection coating layers in c-Si solar cells. The characterizations of SiN_x, SiN_x:Tb^(3+) tand SiN_x:Tb^(3+)-Yb^(3+) thin films were conducted by means of photoluminescence, Rutherford backscattering spectroscopy, Ellipsometry spectroscopy and Fourier transform infrared measurements. Their composition and refractive index was optimized to obtain good anti-reflection coating layer for c-Si solar *** electron microscopy performs the uniform coatings on the textured emitter of c-Si solar cells. After the metallization process, we demonstrate monolithic c-Si solar cells with spectrum conversion layers, which lead to a relative increase by 1.34% in the conversion efficiency.

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