Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE

作     者：岳爱文 沈坤 石兢 王任凡 

作者机构：DepartmentofPhysicsWuhanUniversityWuhan430072 WuhanTelecommunicationDevicesCo.Wuhan430074 InternationalCenterforMaterialPhysicsChineseAcademyofSciencesShenyang110016 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2004年第21卷第1期

页      面：81-83页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：国家自然科学基金 

主　　题：fabrication threshold currents single-mode Output power Vertical cavity surface emitting lasers Metalorganic vapor phase epitaxy 

摘      要：We report the improved performance of the conventional contact 1.3 μm GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 μm GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85 ℃, which were the best results for 1.3 μm GaInNAs VCSELs reported. Maximum single mode output power of 0.256mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.