Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

作     者：曹芝芳 林兆军 吕元杰 栾崇彪 王占国 

作者机构：School of Physics Shandong University Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第4期

页      面：394-398页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 11174182) the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005) 

主　　题：AlGaN/AlN/GaN HFET Schottky drain contact AlGaN barrier layer strain polarization Coulomb field scattering 

摘      要：Rectangular Schottky drain AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） with different gate contact areas and conventional AlGaN/AlN/GaN HFETs as control were both fabricated with same size. It was found there is a significant difference between Schottky drain AlGaN/AlN/GaN HFETs and the control group both in drain series resistance and in two-dimensional electron gas （2DEG） electron mobility in the gate–drain channel. We attribute this to the different influence of Ohmic drain contacts and Schottky drain contacts on the strained AlGaN barrier layer. For conventional AlGaN/AlN/GaN HFETs, annealing drain Ohmic contacts gives rise to a strain variation in the AlGaN barrier layer between the gate contacts and the drain contacts, and results in strong polarization Coulomb field scattering in this region. In Schottky drain AlGaN/AlN/GaN HFETs, the strain in the AlGaN barrier layer is distributed more regularly.