In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

作     者：Magnus T.Borgström Jesper Wallentin Johanna Trägårdh Peter Ramvall Martin Ek LReine Wallenberg Lars Samuelson Knut Deppert 

作者机构：Solid State PhysicsLund UniversityBox 118S-22100LundSweden Polymer&Materials Chemistry/nCHREMLund UniversityS-22100 LundSweden H.H.Wills Physics LaboratoryUniversity of BristolTyndall AvenueBristol BS81TLUnited Kingdom 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2010年第3卷第4期

页      面：264-270页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was performed within the Nanometer Structure Consortium at Lund University and supported by the Swedish Energy Agency,the Swedish Research Council,the Swedish Foundation for Strategic Research,and by the EU programs AMON-RA(No.214814)and NODE(No.015783) This report is based on a project which was funded by E.ON AG as part of the E.ON International Research Initiative.Responsibility for the content of this publication lies with the authors 

主　　题：MOVPE nanowire growth in situ etching photoluminescence 

摘      要：We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway,independent of other growth *** a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial *** demonstrate the method using etching by HCl during InP nanowire *** improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.