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movpe growth of InAs quantum dots for mid-IR applications

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中国有色金属学会会刊：英文版 2006年第B1期16卷 25-28页

作者： TANG Xiao-hong YIN Zong-you DU An-yan ZHAO Jing-hua DENY S Photonics Research Center School of Electrical and Electronic Engineering Nanyang Technological University 639798 Singapore Institute of Microelectronics 11 Science Park Road 117685 Singapore

InAs quantum dots (QDs) grown on InxGa1-xAs/InP matrix by low pressure metal organic vapor phase epitaxy (LP-movpe) in nitrogen ambient were studied. Formation of the InAs QDs with different growth conditions was investigated. To improve the dot size uniformity, a two-step growth method was used and investigated. It is found that morphology of the InAs QDs formed on such InxGa1-xAs/InP matrix is very sensitive to the growth conditions. InAs QDs with high density of 1.3×1010 cm?2 are grown by using S-K growth method with fast growth rate. Using the two-step growth method, the InAs QDs size uniformity improves by 63% and 110% compared that of the dots grown by ordinary S-K method and ALE method, respectively. Narrow photoluminescence (PL) emission spectrum of the QDs grown by using the two-step growth method is received. FWHM of the PL curve is measured at 26 meV and the peak emission wavelength is larger than 2.3 μm at 77 K.

关键词：砷化铟量子点 movpe 晶体生长中红外应用

Epitaxial Techniques for Compound Semiconductor Growth:from LPE to movpe

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Rare Metals 2000年第2期19卷 81-86页

作者：李长荣杜振民罗德贵张维敬 School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China

The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (movpe) particularly have many *** process characteristics and crystalline properties of both LPE and movpe techniques were introduced briefly, the compositional space suitable for LPE and movpe growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and movpe have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.

关键词： Ⅲ-Ⅴ semiconductors LPE movpe Thermodynamic analysis

Criteria for versatile GaN movpe tool:high growth rate GaN by atmospheric pressure growth

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Journal of Semiconductors 2011年第1期32卷 21-23页

作者： Koh Matsumoto Kazutada Ikenaga Jun Yamamoto Kazuki Naito Yoshiki Yano Akinori Ubukata Hiroki Tokunaga Tadanobu Arimura Katsuaki Cho Toshiya Tabuchi Akira Yamaguchi Yasuhiro Harada Yuzaburo Ban Kousuke Uchiyama TN-EMC Ltd 2008-2 Wada TamaTokyo 206-0001Japan Business Strategy Planning div.Electronics Group TAIYO NIPPON SANSO Corporation 10 OkuboTsukuba 300-2611Japan Compound-semiconductor Division TAIYO NIPPON SANSO Corp. 6-2 KojimachoKawasaki-shi210-0861Japan

Growth rate has a direct impact on the productivity of nitride LED production. Atmospheric pressure growth of GaN with a growth rate as high as 10/zm/h and also *** growth of 1μm/h by using 4 inch by 11 production scale movpe are described. XRD of （002） and （102） direction was 200 arcsec and 250 arcsec, respectively. Impact of the growth rate on productivity is discussed.

关键词： movpe GaN: AlGaN atmospheric pressure growth high growth rate

Thermodynamic Analysis of In-As-Sb-C-H System and Design of movpe Process for In(As,Sb) Semiconductor

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Rare Metals 1998年第3期17卷 64-68页

作者：李静波张维敬李长荣杜振民北京科技大学材料科学与工程系北京

An In As Sb C H system composed of 5 phases and 54 gaseous species is set up to simulate the movpe process of the In(As,Sb) semiconductor. Several phase diagram sections and the composition dependences of semiconductors on the input Ⅲ Ⅴ sources are calculated with the conditions defined according to practical movpe processes. The experimental data are collected and compared with the calculated results.

关键词： Thermodynamic analysis movpe In As Sb

Optical and Structural Properties of AP-movpe GaInP/GaAs Heterostructures

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Chinese Physics Letters 1994年第12期11卷 778-781页

作者： REN Hongwen HUANG Bolin XU Xian'gang JIANG Minhua ZHENG Wanhua XU Junying ZHUANG Wanru Institute of Crystal Materials Shandong UniversityJinan 250100 National Laboratory of Integrated Optoelectronics Institute of SemiconductorsAcademia SinicaBeijing 100083

Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressuremetal organic vapor phase epitaxy(AP-movpe).Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence(PL)*** segregation,memory effect of In into GaAs and the carry-over of As in the GaInP layer during the growth process were considered as three major factors giving rise to the anomalous emissions in the PL *** thermal annealing and zinc doping strongly enhanced the compositional interdiffusion near the heterointerfaces.

关键词： GaInP/GaAs movpe matched

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movpe生长GaN的表面反应机理

发光学报 2015年第7期36卷 744-750页

作者：辛晓龙左然童玉珍张国义江苏大学能源与动力工程学院江苏镇江212013 北京大学物理学院宽禁带半导体研究中心北京100871 东莞中镓半导体科技有限公司广东东莞523500

利用量子化学的DFT理论,对movpe生长GaN薄膜的表面初始反应机理进行研究。通过计算GaCH3和NH3在GaN(0001)-Ga面的4种吸附位的能量曲线发现,GaCH3在各吸附位的吸附能差值不大,因此容易在表面迁移;而NH3在各吸附位的吸附能差值较大,最稳... 详细信息

利用量子化学的DFT理论,对movpe生长GaN薄膜的表面初始反应机理进行研究。通过计算GaCH3和NH3在GaN(0001)-Ga面的4种吸附位的能量曲线发现,GaCH3在各吸附位的吸附能差值不大,因此容易在表面迁移;而NH3在各吸附位的吸附能差值较大,最稳定吸附位为Top位,迁移到其他位置需要克服较大能垒。在此基础上,提出了以NH3和GaCH3为表面生长基元,在GaN(0001)-Ga面连续生长,最终形成环状核心的二维生长机理:在环状核心形成过程中,第1个GaN核生长需要3个NH3和1个GaCH3,可表示为Ga(NH2)3。第2个GaN核生长可利用已有的1个N作为配位原子,故只需2个NH3和1个GaCH3。2个GaN核可表示为(NH2)2Ga-NH-Ga(NH2)2。第3个GaN核生长可利用已有的2个N作为配位原子,故只需要1个NH3和1个GaCH3。3个GaN核构成环状核心,可表示为Ga3(NH)3(NH2)3。后续的生长将重复第2个核和第3个核的生长过程,从而实现GaN薄膜的连续台阶生长。

关键词： GaN薄膜 movpe DFT 表面反应

Quasi-Thermodynamic Model of movpe of InAlN

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Journal of Semiconductors 2000年第8期21卷 729-734页

作者：陆大成段树坤中科院半导体所中科院半导体材料科学开放实验室北京 1 0 0 0 83 中科院半导体所集成光电子学联合国家重点实验室北京 1 0 0 0 83

A quasi\|thermodynamic model of movpe growth of In\- x Al 1- x N alloy with TMAl,TMIn and ammonia as sources has been *** this improved model,the effect of low decomposition rate of ammonia has been considered and the number of moles is used to express the mass conservation constraints of element N,H,Al and *** is assumed that the alloy is synthesized by the reactions between ammonia and group Ⅲ *** results show that it is more difficult to grow the In\-xAl 1-x N alloy,especially for the In\-xAl1-xN lattice matched the *** order to enhance the incorporation of indium into InAlN,we should use the lower growth temperature,optimized input Ⅴ/Ⅲ ratio and high nitrogen fraction in the carrier *** addition,the decomposed fraction of ammonia should be *** droplets would be deposited if the growth conditions have not been selected properly.

关键词： InAlN movpe thermodynamic model

A Quasi-Therm odynam ic Model of movpe of InGaN

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Journal of Semiconductors 2000年第2期21卷 105-114页

作者：陆大成段树坤中科院半导体所中科院半导体材料科学开放实验室北京 100083 中科院半导体所集成光电子学联合国家重点实验室北京 100083

A quasi\|thermodynamic model of movpe growth of In\- x Ga\-\{1- x \}N alloys has been proposed with TMGa, TMIn and ammonia as source materials. In this improved model, the effect of low decomposition rate of ammonia is considered and the number of moles is used to express the mass conservation constraints on element N, H, In and Ga. It is assumed that the alloy was synthesized by the reactions between ammonia and group III elements. The equilibrium partial pressures over the In\- x Ga\-\{1- x \}N have been calculated. For the In\- x Ca\-\{1- x \} alloys the relationship between the input vapor and the deposited solid composition has been calculated and the results compared with the literature data. The good agreement on the compositions from calculation and the experiment shows that our improved model is suitable for applying to the In\- x Ga\-\{1- x \}N alloys grown by movpe. It is difficult for In\- x Ga\-\{1- x \}N alloy to grow, especially for high\|indium alloys, because In\- x Ga\-\{1- x \}N is an immiscible alloy and InN has a very high In vapor pressure. It is also shown that gallium has strong tendency of preferential incorporation into the In\- x Ga\-\{1- x \}N alloy. In order to enhance the incorporation of indium into the InGaN, we should use the lower growth\|temperature,lower reactor pressure, higher input V/III ratio and higher nitrogen fraction in the carrier gas, in addition, the decomposed fraction of ammonia should also be reduced. Indium droplets would be deposed if the growing conditions were not selected properly.

关键词： movpe InGaN Thermodynamic

GaN-movpe生长的气相反应中自由基的作用

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中国科学：技术科学 2019年第8期49卷 939-946页

作者：张红左然江苏大学能源与动力工程学院

针对垂直转盘式movpe反应器,利用结合反应动力学-输运过程的CFD模拟,研究movpe生长GaN的气相反应中自由基的影响.通过分析对比包括或不包括·H和·NH2自由基反应时,主要反应前体的浓度和生长速率的变化,确定自由基对气相反应路径的影响... 详细信息

针对垂直转盘式movpe反应器,利用结合反应动力学-输运过程的CFD模拟,研究movpe生长GaN的气相反应中自由基的影响.通过分析对比包括或不包括·H和·NH2自由基反应时,主要反应前体的浓度和生长速率的变化,确定自由基对气相反应路径的影响.模拟分别考虑由简单到复杂三种情况:(1)基准反应,即不包括自由基的反应;(2)包括·H自由基的反应;(3)同时包括·H和·NH2自由基的反应.研究发现:只考虑基准反应和包括·H自由基的反应时,气相反应均为热解路径占主导.·H自由基促进了TMG和DMG的分解,使衬底上MMG的浓度明显增大,进而使生长速率比基准反应时明显提高.·H自由基极易与NH3反应生成·NH2自由基,在衬底上方得到高浓度的·NH2自由基;在包括·NH2与TMG的反应后,由于该反应活化能为零,使得TMG迅速转化为DMGNH2,烷基镓的浓度在生长前沿全部为零,而DMGNH2浓度达到最大值,气相反应也由热解路径转为加合路径.考虑实际生长存在各种自由基,因此,当有足够的自由基产生时,GaN气相反应将由加合路径占主导.

关键词： GaN movpe 气相反应自由基数值模拟