Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

作     者：付丙磊 刘乃鑫 刘喆 李晋闽 王军喜 

作者机构：Research and Development Center for Semiconductor LightingChinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2014年第35卷第11期

页      面：70-73页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0803[工学-光学工程] 

主　　题：light emitting diodes V-defects growth pressure p-GaN 

摘      要：The advantages of InGaN/GaN light emitting diodes （LEDs） with p-GaN grown under high pressures are studied. It is shown that the high growth pressure could lead to better electronic properties of p-GaN layers due to the eliminated compensation effect. The contact resistivity of p-GaN layers are decreased due to the reduced donor-like defects on the p-GaN surface. The leakage current is also reduced, which may be induced by the better filling of V-defects with p-GaN layers grown under high pressures. The LED efficiency thus could be enhanced with high pressure grown p-GaN layers.